Segui
BINHUI HU
BINHUI HU
National Institute of Standards and Technology, and the Joint Quantum Institute, University of
Email verificata su umd.edu
Titolo
Citata da
Citata da
Anno
Field emission property of highly ordered monodispersed carbon nanotube arrays
ZH Yuan, H Huang, HY Dang, JE Cao, BH Hu, SS Fan
Applied Physics Letters 78 (20), 3127-3129, 2001
1002001
Valley-degenerate two-dimensional electrons in the lowest Landau level
TM Kott, B Hu, SH Brown, BE Kane
Physical Review B 89 (4), 041107, 2014
492014
Enhancement-mode metal-oxide-semiconductor single-electron transistor on pure silicon
GM Jones, BH Hu, CH Yang, MJ Yang, R Hajdaj, G Hehein
Applied physics letters 89 (7), 2006
192006
Electron spin blockade and singlet-triplet transition in a silicon single electron transistor
B Hu, CH Yang
Physical Review B 80 (7), 075310, 2009
172009
Low-resistance, high-yield electrical contacts to atom scale Si:P devices using palladium silicide
SW Schmucker, PN Namboodiri, R Kashid, X Wang, B Hu, JE Wyrick, ...
Physical Review Applied 2019, 2019
142019
High mobility two-dimensional hole system on hydrogen-terminated silicon (111) surfaces
B Hu, TM Kott, RN McFarland, BE Kane
Applied Physics Letters 100 (25), 2012
132012
Strongly metallic electron and hole 2D transport in an ambipolar Si-vacuum field effect transistor
B Hu, MM Yazdanpanah, BE Kane, EH Hwang, SD Sarma
Physical Review Letters 115 (3), 036801, 2015
102015
Field emission properties of a potassium-doped multiwalled carbon nanotube tip
B Hu, P Li, J Cao, H Dai, S Fan
Japanese Journal of Applied Physics 40 (8R), 5121, 2001
102001
Effect of device design on charge offset drift in Si/SiO2 single electron devices
B Hu, ED Ochoa, D Sanchez, JK Perron, NM Zimmerman, MD Stewart
Journal of applied physics 124 (14), 2018
62018
Observation of one-electron charge in an enhancement-mode InAs single-electron transistor at 4.2 K
GM Jones, BH Hu, CH Yang, MJ Yang, YB Lyanda-Geller
Applied physics letters 88 (19), 2006
62006
A cryogenic voltage amplifier with 36MHz bandwidth using discrete GaAs metal-semiconductor field-effect transistors
BH Hu, CH Yang
Review of scientific instruments 76 (12), 2005
62005
On-demand single-photon source using a nanoscale metal–insulator–semiconductor capacitor
BH Hu, CH Yang, MJ Yang
Nanotechnology 16 (8), 1354, 2005
62005
Enhancement-mode quantum transistors for single electron spin
GM Jones, BH Hu, CH Yang, MJ Yang, YB Lyanda-Geller
Physica E: Low-dimensional Systems and Nanostructures 34 (1-2), 612-615, 2006
32006
An enhancement-mode GaAs heterojunction transistor using benzocyclobutene as gate dielectric
GM Jones, BH Hu, CH Yang, MJ Yang, JL Reno
Journal of applied physics 100 (1), 2006
12006
Single electron transistor in pure silicon
B Hu
University of Maryland, College Park, 2009
2009
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
Articoli 1–15