Field emission property of highly ordered monodispersed carbon nanotube arrays ZH Yuan, H Huang, HY Dang, JE Cao, BH Hu, SS Fan Applied Physics Letters 78 (20), 3127-3129, 2001 | 100 | 2001 |
Valley-degenerate two-dimensional electrons in the lowest Landau level TM Kott, B Hu, SH Brown, BE Kane Physical Review B 89 (4), 041107, 2014 | 49 | 2014 |
Enhancement-mode metal-oxide-semiconductor single-electron transistor on pure silicon GM Jones, BH Hu, CH Yang, MJ Yang, R Hajdaj, G Hehein Applied physics letters 89 (7), 2006 | 19 | 2006 |
Electron spin blockade and singlet-triplet transition in a silicon single electron transistor B Hu, CH Yang Physical Review B 80 (7), 075310, 2009 | 17 | 2009 |
Low-resistance, high-yield electrical contacts to atom scale Si:P devices using palladium silicide SW Schmucker, PN Namboodiri, R Kashid, X Wang, B Hu, JE Wyrick, ... Physical Review Applied 2019, 2019 | 14 | 2019 |
High mobility two-dimensional hole system on hydrogen-terminated silicon (111) surfaces B Hu, TM Kott, RN McFarland, BE Kane Applied Physics Letters 100 (25), 2012 | 13 | 2012 |
Strongly metallic electron and hole 2D transport in an ambipolar Si-vacuum field effect transistor B Hu, MM Yazdanpanah, BE Kane, EH Hwang, SD Sarma Physical Review Letters 115 (3), 036801, 2015 | 10 | 2015 |
Field emission properties of a potassium-doped multiwalled carbon nanotube tip B Hu, P Li, J Cao, H Dai, S Fan Japanese Journal of Applied Physics 40 (8R), 5121, 2001 | 10 | 2001 |
Effect of device design on charge offset drift in Si/SiO2 single electron devices B Hu, ED Ochoa, D Sanchez, JK Perron, NM Zimmerman, MD Stewart Journal of applied physics 124 (14), 2018 | 6 | 2018 |
Observation of one-electron charge in an enhancement-mode InAs single-electron transistor at 4.2 K GM Jones, BH Hu, CH Yang, MJ Yang, YB Lyanda-Geller Applied physics letters 88 (19), 2006 | 6 | 2006 |
A cryogenic voltage amplifier with 36MHz bandwidth using discrete GaAs metal-semiconductor field-effect transistors BH Hu, CH Yang Review of scientific instruments 76 (12), 2005 | 6 | 2005 |
On-demand single-photon source using a nanoscale metal–insulator–semiconductor capacitor BH Hu, CH Yang, MJ Yang Nanotechnology 16 (8), 1354, 2005 | 6 | 2005 |
Enhancement-mode quantum transistors for single electron spin GM Jones, BH Hu, CH Yang, MJ Yang, YB Lyanda-Geller Physica E: Low-dimensional Systems and Nanostructures 34 (1-2), 612-615, 2006 | 3 | 2006 |
An enhancement-mode GaAs heterojunction transistor using benzocyclobutene as gate dielectric GM Jones, BH Hu, CH Yang, MJ Yang, JL Reno Journal of applied physics 100 (1), 2006 | 1 | 2006 |
Single electron transistor in pure silicon B Hu University of Maryland, College Park, 2009 | | 2009 |