Enhancement of Superconductivity and Evidence of Structural Instability in Intercalated Graphite A Gauzzi, S Takashima, N Takeshita, C Terakura, H Takagi, N Emery, ...
Physical review letters 98 (6), 067002, 2007
142 2007 The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN SF Chichibu, A Uedono, K Kojima, H Ikeda, K Fujito, S Takashima, M Edo, ...
Journal of applied physics 123 (16), 2018
138 2018 Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations M Horita, S Takashima, R Tanaka, H Matsuyama, K Ueno, M Edo, ...
Japanese Journal of Applied Physics 56 (3), 031001, 2017
103 2017 Nitrogen vacancies as a common element of the green luminescence and nonradiative recombination centers in Mg-implanted GaN layers formed on a GaN substrate K Kojima, S Takashima, M Edo, K Ueno, M Shimizu, T Takahashi, ...
Applied Physics Express 10 (6), 061002, 2017
82 2017 Control of the inversion-channel MOS properties by Mg doping in homoepitaxial p-GaN layers S Takashima, K Ueno, H Matsuyama, T Inamoto, M Edo, T Takahashi, ...
Applied Physics Express 10 (12), 121004, 2017
77 2017 Vacancy‐type defects and their annealing behaviors in Mg‐implanted GaN studied by a monoenergetic positron beam A Uedono, S Takashima, M Edo, K Ueno, H Matsuyama, H Kudo, ...
physica status solidi (b) 252 (12), 2794-2801, 2015
75 2015 Fabrication of vertical Schottky barrier diodes on n-type freestanding AlN substrates grown by hydride vapor phase epitaxy T Kinoshita, T Nagashima, T Obata, S Takashima, R Yamamoto, ...
Applied Physics Express 8 (6), 061003, 2015
70 2015 Demonstration of 1200 V/1.4 mΩ cm2 vertical GaN planar MOSFET fabricated by an all ion implantation process R Tanaka, S Takashima, K Ueno, H Matsuyama, M Edo
Japanese Journal of Applied Physics 59 (SG), SGGD02, 2020
67 2020 Carrier Trapping by Vacancy‐Type Defects in Mg‐Implanted GaN Studied Using Monoenergetic Positron Beams A Uedono, S Takashima, M Edo, K Ueno, H Matsuyama, W Egger, ...
physica status solidi (b) 255 (4), 1700521, 2018
67 2018 Sidewall dominated characteristics on fin-gate AlGaN/GaN MOS-channel-HEMTs S Takashima, Z Li, TP Chow
IEEE transactions on electron devices 60 (10), 3025-3031, 2013
65 2013 Large electron capture-cross-section of the major nonradiative recombination centers in Mg-doped GaN epilayers grown on a GaN substrate SF Chichibu, K Shima, K Kojima, S Takashima, M Edo, K Ueno, ...
Applied Physics Letters 112 (21), 2018
58 2018 Impact of annealing on ALD Al2 O3 gate dielectric for GaN MOS devices T Marron, S Takashima, Z Li, TP Chow
physica status solidi c 9 (3‐4), 907-910, 2012
55 2012 Mg implantation dose dependence of MOS channel characteristics in GaN double-implanted MOSFETs R Tanaka, S Takashima, K Ueno, H Matsuyama, M Edo, K Nakagawa
Applied Physics Express 12 (5), 054001, 2019
42 2019 Robustness of non-Fermi-liquid behavior near the ferromagnetic critical point in clean ZrZn2 S Takashima, M Nohara, H Ueda, N Takeshita, C Terakura, F Sakai, ...
journal of the physical society of japan 76 (4), 043704-043704, 2007
36 2007 Cathodoluminescene study of Mg implanted GaN: the impact of dislocation on Mg diffusion J Chen, W Yi, T Kimura, S Takashima, M Edo, T Sekiguchi
Applied Physics Express 12 (5), 051010, 2019
33 2019 Electron microscopy studies of the intermediate layers at the SiO2/GaN interface K Mitsuishi, K Kimoto, Y Irokawa, T Suzuki, K Yuge, T Nabatame, ...
Japanese Journal of Applied Physics 56 (11), 110312, 2017
33 2017 Atomic-scale quantitative analysis of implanted Mg in annealed GaN layers on free-standing GaN substrates A Kumar, J Uzuhashi, T Ohkubo, R Tanaka, S Takashima, M Edo, K Hono
Journal of Applied Physics 126 (23), 2019
27 2019 Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures SF Chichibu, K Shima, K Kojima, S Takashima, K Ueno, M Edo, H Iguchi, ...
Japanese Journal of Applied Physics 58 (SC), SC0802, 2019
27 2019 Comparative analysis of defects in Mg-implanted and Mg-doped GaN layers on freestanding GaN substrates A Kumar, K Mitsuishi, T Hara, K Kimoto, Y Irokawa, T Nabatame, ...
Nanoscale Research Letters 13, 1-8, 2018
25 2018 Metal–oxide–semiconductor interface and dielectric properties of atomic layer deposited SiO2 on GaN S Takashima, Z Li, TP Chow
Japanese Journal of Applied Physics 52 (8S), 08JN24, 2013
24 2013 