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Shinya Takashima
Shinya Takashima
Fuji Electric Co., Ltd.
Email verificata su fujielectric.com
Titolo
Citata da
Citata da
Anno
Enhancement of Superconductivity and Evidence of Structural Instability in Intercalated Graphite under High Pressure
A Gauzzi, S Takashima, N Takeshita, C Terakura, H Takagi, N Emery, ...
Physical review letters 98 (6), 067002, 2007
1442007
The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN
SF Chichibu, A Uedono, K Kojima, H Ikeda, K Fujito, S Takashima, M Edo, ...
Journal of applied physics 123 (16), 2018
1412018
Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations
M Horita, S Takashima, R Tanaka, H Matsuyama, K Ueno, M Edo, ...
Japanese Journal of Applied Physics 56 (3), 031001, 2017
1032017
Nitrogen vacancies as a common element of the green luminescence and nonradiative recombination centers in Mg-implanted GaN layers formed on a GaN substrate
K Kojima, S Takashima, M Edo, K Ueno, M Shimizu, T Takahashi, ...
Applied Physics Express 10 (6), 061002, 2017
832017
Control of the inversion-channel MOS properties by Mg doping in homoepitaxial p-GaN layers
S Takashima, K Ueno, H Matsuyama, T Inamoto, M Edo, T Takahashi, ...
Applied Physics Express 10 (12), 121004, 2017
792017
Vacancy‐type defects and their annealing behaviors in Mg‐implanted GaN studied by a monoenergetic positron beam
A Uedono, S Takashima, M Edo, K Ueno, H Matsuyama, H Kudo, ...
physica status solidi (b) 252 (12), 2794-2801, 2015
762015
Fabrication of vertical Schottky barrier diodes on n-type freestanding AlN substrates grown by hydride vapor phase epitaxy
T Kinoshita, T Nagashima, T Obata, S Takashima, R Yamamoto, ...
Applied Physics Express 8 (6), 061003, 2015
702015
Carrier Trapping by Vacancy‐Type Defects in Mg‐Implanted GaN Studied Using Monoenergetic Positron Beams
A Uedono, S Takashima, M Edo, K Ueno, H Matsuyama, W Egger, ...
physica status solidi (b) 255 (4), 1700521, 2018
682018
Demonstration of 1200 V/1.4 mΩ cm2 vertical GaN planar MOSFET fabricated by an all ion implantation process
R Tanaka, S Takashima, K Ueno, H Matsuyama, M Edo
Japanese Journal of Applied Physics 59 (SG), SGGD02, 2020
672020
Sidewall dominated characteristics on fin-gate AlGaN/GaN MOS-channel-HEMTs
S Takashima, Z Li, TP Chow
IEEE transactions on electron devices 60 (10), 3025-3031, 2013
652013
Large electron capture-cross-section of the major nonradiative recombination centers in Mg-doped GaN epilayers grown on a GaN substrate
SF Chichibu, K Shima, K Kojima, S Takashima, M Edo, K Ueno, ...
Applied Physics Letters 112 (21), 2018
602018
Impact of annealing on ALD Al2O3 gate dielectric for GaN MOS devices
T Marron, S Takashima, Z Li, TP Chow
physica status solidi c 9 (3‐4), 907-910, 2012
572012
Mg implantation dose dependence of MOS channel characteristics in GaN double-implanted MOSFETs
R Tanaka, S Takashima, K Ueno, H Matsuyama, M Edo, K Nakagawa
Applied Physics Express 12 (5), 054001, 2019
432019
Robustness of non-Fermi-liquid behavior near the ferromagnetic critical point in clean ZrZn2
S Takashima, M Nohara, H Ueda, N Takeshita, C Terakura, F Sakai, ...
journal of the physical society of japan 76 (4), 043704-043704, 2007
372007
Electron microscopy studies of the intermediate layers at the SiO2/GaN interface
K Mitsuishi, K Kimoto, Y Irokawa, T Suzuki, K Yuge, T Nabatame, ...
Japanese Journal of Applied Physics 56 (11), 110312, 2017
342017
Cathodoluminescene study of Mg implanted GaN: the impact of dislocation on Mg diffusion
J Chen, W Yi, T Kimura, S Takashima, M Edo, T Sekiguchi
Applied Physics Express 12 (5), 051010, 2019
332019
Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures
SF Chichibu, K Shima, K Kojima, S Takashima, K Ueno, M Edo, H Iguchi, ...
Japanese Journal of Applied Physics 58 (SC), SC0802, 2019
292019
Atomic-scale quantitative analysis of implanted Mg in annealed GaN layers on free-standing GaN substrates
A Kumar, J Uzuhashi, T Ohkubo, R Tanaka, S Takashima, M Edo, K Hono
Journal of Applied Physics 126 (23), 2019
272019
Comparative analysis of defects in Mg-implanted and Mg-doped GaN layers on freestanding GaN substrates
A Kumar, K Mitsuishi, T Hara, K Kimoto, Y Irokawa, T Nabatame, ...
Nanoscale Research Letters 13, 1-8, 2018
252018
Metal–oxide–semiconductor interface and dielectric properties of atomic layer deposited SiO2 on GaN
S Takashima, Z Li, TP Chow
Japanese Journal of Applied Physics 52 (8S), 08JN24, 2013
242013
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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