Fay Hudson
Fay Hudson
Senior Research Fellow, Faculty of Engineering, UNSW Sydney
Verified email at unsw.edu.au
Title
Cited by
Cited by
Year
A two-qubit logic gate in silicon
M Veldhorst, CH Yang, JCC Hwang, W Huang, JP Dehollain, JT Muhonen, ...
Nature 526 (7573), 410-414, 2015
6632015
An addressable quantum dot qubit with fault-tolerant control-fidelity
M Veldhorst, JCC Hwang, CH Yang, AW Leenstra, B de Ronde, ...
Nature nanotechnology 9 (12), 981-985, 2014
6092014
Storing quantum information for 30 seconds in a nanoelectronic device
JT Muhonen, JP Dehollain, A Laucht, FE Hudson, R Kalra, T Sekiguchi, ...
Nature nanotechnology 9 (12), 986-991, 2014
4582014
Controlled shallow single-ion implantation in silicon using an active substrate for sub-20‐keV ions
DN Jamieson, C Yang, T Hopf, SM Hearne, CI Pakes, S Prawer, M Mitic, ...
Applied Physics Letters 86 (20), 202101, 2005
2322005
Fidelity benchmarks for two-qubit gates in silicon
W Huang, CH Yang, KW Chan, T Tanttu, B Hensen, RCC Leon, ...
Nature 569 (7757), 532-536, 2019
1212019
Electrically controlling single-spin qubits in a continuous microwave field
A Laucht, JT Muhonen, FA Mohiyaddin, R Kalra, JP Dehollain, S Freer, ...
Science advances 1 (3), e1500022, 2015
1142015
Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking
JT Muhonen, A Laucht, S Simmons, JP Dehollain, R Kalra, FE Hudson, ...
Journal of Physics: Condensed Matter 27 (15), 154205, 2015
1132015
Progress in silicon-based quantum computing
RG Clark, R Brenner, TM Buehler, V Chan, NJ Curson, AS Dzurak, ...
Philosophical Transactions of the Royal Society of London. Series A …, 2003
882003
Pauli spin blockade of heavy holes in a silicon double quantum dot
R Li, FE Hudson, AS Dzurak, AR Hamilton
Nano letters 15 (11), 7314-7318, 2015
632015
A dressed spin qubit in silicon
A Laucht, R Kalra, S Simmons, JP Dehollain, JT Muhonen, ...
Nature nanotechnology 12 (1), 61, 2017
582017
Spin-orbit coupling and operation of multivalley spin qubits
M Veldhorst, R Ruskov, CH Yang, JCC Hwang, FE Hudson, ME Flatté, ...
Physical Review B 92 (20), 201401, 2015
562015
Single atom devices by ion implantation
J Van Donkelaar, C Yang, ADC Alves, JC McCallum, C Hougaard, ...
Journal of Physics: Condensed Matter 27 (15), 154204, 2015
552015
Bell's inequality violation with spins in silicon
JP Dehollain, S Simmons, JT Muhonen, R Kalra, A Laucht, F Hudson, ...
Nature nanotechnology 11 (3), 242, 2016
522016
Gate-based single-shot readout of spins in silicon
A West, B Hensen, A Jouan, T Tanttu, CH Yang, A Rossi, ...
Nature nanotechnology 14 (5), 437-441, 2019
512019
Silicon qubit fidelities approaching incoherent noise limits via pulse engineering
CH Yang, KW Chan, R Harper, W Huang, T Evans, JCC Hwang, ...
Nature Electronics 2 (4), 151-158, 2019
422019
Assessment of a silicon quantum dot spin qubit environment via noise spectroscopy
KW Chan, W Huang, CH Yang, JCC Hwang, B Hensen, T Tanttu, ...
Physical Review Applied 10 (4), 044017, 2018
372018
Thermal-error regime in high-accuracy gigahertz single-electron pumping
R Zhao, A Rossi, SP Giblin, JD Fletcher, FE Hudson, M Möttönen, ...
Physical Review Applied 8 (4), 044021, 2017
372017
Controlled single electron transfer between Si: P dots
TM Buehler, V Chan, AJ Ferguson, AS Dzurak, FE Hudson, DJ Reilly, ...
Applied physics letters 88 (19), 192101, 2006
342006
Integrated silicon qubit platform with single-spin addressability, exchange control and single-shot singlet-triplet readout
MA Fogarty, KW Chan, B Hensen, W Huang, T Tanttu, CH Yang, A Laucht, ...
Nature communications 9 (1), 1-8, 2018
292018
Single hole transport in a silicon metal-oxide-semiconductor quantum dot
R Li, FE Hudson, AS Dzurak, AR Hamilton
Applied Physics Letters 103 (16), 163508, 2013
292013
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Articles 1–20