Sandro Rao
Citata da
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An ultralow-voltage energy-efficient level shifter
M Lanuzza, F Crupi, S Rao, R De Rose, S Strangio, G Iannaccone
IEEE Transactions on Circuits and Systems II: Express Briefs 64 (1), 61-65, 2016
High-performance temperature sensor based on 4H-SiC Schottky diodes
S Rao, G Pangallo, F Pezzimenti, F Della Corte
Electron Device Letters, IEEE 36 (7), 720-722, 2015
Use of amorphous silicon for active photonic devices
FG Della Corte, S Rao
IEEE Transactions on Electron Devices 60 (5), 1495 - 1505, 2013
4H-SiC pin diode as Highly Linear Temperature Sensor
S Rao, G Pangallo, FG Della Corte
Electron Devices, IEEE Transactions on 63 (1), 414 - 418, 2016
85–440 K temperature sensor based on a 4H-SiC Schottky diode
S Rao, L Di Benedetto, G Pangallo, A Rubino, S Bellone, FG Della Corte
IEEE Sensors Journal 16 (17), 6537-6542, 2016
Electro-optical modulation at 1550 nm in an as-deposited hydrogenated amorphous silicon pin waveguiding device
FG Della Corte, S Rao, G Coppola, C Summonte
Optics express 19 (4), 2941-2951, 2011
Electro-optically induced absorption in α-Si: H/α-SiCN waveguiding multistacks
FG Della Corte, S Rao, MA Nigro, F Suriano, C Summonte
Optics Express 16 (10), 7540-7550, 2008
Low dark current silicon-on-insulator waveguide metal-semiconductor-metal-photodetector based on internal photoemissions at 1550 nm
M Casalino, M Iodice, L Sirleto, S Rao, I Rendina, G Coppola
Journal of Applied Physics 114 (15), 153103, 2013
Simulation and analysis of the current–voltage–temperature characteristics of Al/Ti/4H-SiC Schottky barrier diodes
K Zeghdar, L Dehimi, F Pezzimenti, S Rao, FG Della Corte
Japanese Journal of Applied Physics 58 (1), 014002, 2019
Highly linear temperature sensor based on 4H-silicon carbide pin diodes
S Rao, G Pangallo, FG Della Corte
IEEE Electron Device Letters 36 (11), 1205-1208, 2015
A 2.5 ns switching time MachZehnder modulator in as-deposited a-Si: H
S Rao, G Coppola, MA Gioffrè, FG Della Corte
Optics Express 20 (9), 9351-9356, 2012
Analysis of different forward current–voltage behaviours of Al implanted 4H-SiC vertical p–i–n diodes
ML Megherbi, F Pezzimenti, L Dehimi, S Rao, FG Della Corte
Solid-State Electronics 109, 12-16, 2015
Integrated amorphous silicon pin temperature sensor for CMOS photonics
S Rao, G Pangallo, FG Della Corte
Sensors 16 (1), 67, 2016
Low-loss amorphous silicon waveguides grown by PECVD on indium tin oxide
S Rao, FG Della Corte, C Summonte
Journal of the European Optical Society-Rapid publications 5, 2010
Electrooptical Modulating Device Based on a CMOS-Compatible ${\bm\alpha} $-Si: H/${\bm\alpha} $-SiCN Multistack Waveguide
S Rao, FG Della Corte, C Summonte, F Suriano
IEEE Journal of Selected Topics in Quantum Electronics 16 (1), 173-178, 2009
V2O5/4H-SiC Schottky Diode Temperature Sensor: Experiments and Model
L Di Benedetto, GD Licciardo, S Rao, G Pangallo, FG Della Corte, ...
IEEE Transactions on Electron Devices 65 (2), 687-694, 2018
A V2O5/4H-SiC Schottky diode-based PTAT sensor operating in a wide range of bias currents
S Rao, G Pangallo, L Di Benedetto, A Rubino, GD Licciardo, ...
Sensors and Actuators A: Physical 269, 171-174, 2018
All-optical modulation in a CMOS-compatible amorphous silicon-based device
S Rao, C D'Addio, FG Della Corte
Journal of the European Optical Society-Rapid publications 7, 2012
Temperature sensing characteristics and long term stability of power LEDs used for voltage vs. Junction temperature measurements and related procedure
FG Della Corte, G Pangallo, R Carotenuto, D Iero, G Marra, M Merenda, ...
IEEE Access 8, 43057-43066, 2020
Numerical analysis of electro-optical modulators based on the amorphous silicon technology
S Rao, FG Della Corte
Journal of lightwave technology 32 (13), 2399-2407, 2014
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