Spectral broadening in self-assembled GaAs quantum dots with narrow size distribution F Basso Basset, S Bietti, A Tuktamyshev, S Vichi, E Bonera, S Sanguinetti
Journal of Applied Physics 126 (2), 2019
19 2019 Droplet epitaxy quantum dot based infrared photodetectors S Vichi, S Bietti, A Khalili, M Costanzo, F Cappelluti, L Esposito, ...
Nanotechnology 31 (24), 245203, 2020
17 2020 GaAs epilayers grown on patterned (001) silicon substrates via suspended Ge layers A Ballabio, S Bietti, A Scaccabarozzi, L Esposito, S Vichi, A Fedorov, ...
Scientific reports 9 (1), 17529, 2019
17 2019 Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs (111) A vicinal substrates A Tuktamyshev, A Fedorov, S Bietti, S Vichi, KD Zeuner, KD Jöns, ...
Applied Physics Letters 118 (13), 2021
15 2021 Nucleation of Ga droplets self-assembly on GaAs (111) A substrates A Tuktamyshev, A Fedorov, S Bietti, S Vichi, R Tambone, S Tsukamoto, ...
Scientific Reports 11 (1), 6833, 2021
6 2021 Increasing the Luminescence Efficiency of Long-Wavelength ( , ) Quantum Well Structures by Electric Field Engineering Using an ( , ) Capping Layer S Vichi, Y Robin, S Sanguinetti, M Pristovsek, H Amano
Physical Review Applied 14 (2), 024018, 2020
3 2020 Enhancing intermediate band solar cell performances through quantum engineering of dot states by droplet epitaxy A Scaccabarozzi, S Vichi, S Bietti, F Cesura, T Aho, M Guina, F Cappelluti, ...
Progress in Photovoltaics: Research and Applications 31 (6), 637-644, 2023
2 2023 Exciton Fine Structure in Quantum Dots with Cavity-Enhanced Emission at Telecommunication Wavelength and Grown on a (111) Vicinal Substrate A Barbiero, A Tuktamyshev, G Pirard, J Huwer, T Müller, RM Stevenson, ...
Physical Review Applied 18 (3), 034081, 2022
2 2022 Flat metamorphic InAlAs buffer layer on GaAs (111) A misoriented substrates by growth kinetics control A Tuktamyshev, S Vichi, F Cesura, A Fedorov, S Bietti, D Chrastina, ...
Journal of Crystal Growth 600, 126906, 2022
1 2022 Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs (111) Metamorphic Substrates A Tuktamyshev, S Vichi, FG Cesura, A Fedorov, G Carminati, D Lambardi, ...
Nanomaterials 12 (20), 3571, 2022
1 2022 Optically controlled dual-band quantum dot infrared photodetector S Vichi, S Bietti, FB Basset, A Tuktamyshev, A Fedorov, S Sanguinetti
Nanomaterials and Nanotechnology 12, 18479804221085790, 2022
1 2022 Metal Droplet Effects on the Composition of Ternary Nitrides M Azadmand, S Vichi, S Bietti, D Chrastina, E Bonera, M Acciarri, ...
arXiv preprint arXiv:1907.06939, 2019
1 2019 Droplet free self-assembling of high density nanoholes on GaAs (100) via thermal drilling F Cesura, S Vichi, A Tuktamyshev, S Bietti, A Fedorov, S Sanguinetti, ...
Journal of Crystal Growth 630, 127588, 2024
2024 Temperature activated transitions in the self assembly of Ga and In droplets on (111) A vicinal substrates A Tuktamyshev, F Cesura, S Vichi, F Alexey, S Bietti, S Sanguinetti
2023 Vapour Liquid Solid Growth Effects on InGaN Epilayers Composition Uniformity in Presence of Metal Droplets M Azadmand, S Vichi, FG Cesura, S Bietti, D Chrastina, E Bonera, ...
Nanomaterials 12 (21), 3887, 2022
2022 Fine structure splitting analysis of cavity-enhanced telecom-wavelength InAs quantum dots grown on a GaAs (111) A vicinal substrate A Barbiero, A Tuktamyshev, G Pirard, J Huwer, T Müller, RM Stevenson, ...
arXiv preprint arXiv:2202.11436, 2022
2022 Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs (111) Metamorphic Substrates. Nanomaterials 2022, 12, 3571 A Tuktamyshev, S Vichi, FG Cesura, A Fedorov, G Carminati, D Lambardi, ...
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2022 Bandgap and Intrinsic Electric Field Engineering in Nitrides: Towards Efficient Red LEDs S Vichi
Università degli Studi di Milano-Bicocca, 2021
2021 Local Droplet Etching of a Vicinal Ingaas (111) A Metamorphic Layer A Tuktamyshev, D Lambardi, S Vichi, F Cesura, S Cecchi, A Fedorov, ...
Available at SSRN 4780683, 0