Stephan Wirths
Stephan Wirths
ABB Corporate Research
Email verificata su ch.abb.com - Home page
TitoloCitata daAnno
Lasing in direct-bandgap GeSn alloy grown on Si
S Wirths, R Geiger, N von den Driesch, G Mussler, T Stoica, S Mantl, ...
Nature photonics 9 (2), 88, 2015
7112015
Band engineering and growth of tensile strained Ge/(Si) GeSn heterostructures for tunnel field effect transistors
S Wirths, AT Tiedemann, Z Ikonic, P Harrison, B Holländer, T Stoica, ...
Applied physics letters 102 (19), 192103, 2013
1462013
Optically pumped GeSn microdisk lasers on Si
D Stange, S Wirths, R Geiger, C Schulte-Braucks, B Marzban, ...
ACS Photonics 3 (7), 1279-1285, 2016
1252016
Si–Ge–Sn alloys: From growth to applications
S Wirths, D Buca, S Mantl
Progress in crystal growth and characterization of materials 62 (1), 1-39, 2016
1032016
Direct bandgap group IV epitaxy on Si for laser applications
N Von den Driesch, D Stange, S Wirths, G Mussler, B Hollander, Z Ikonic, ...
Chemistry of materials 27 (13), 4693-4702, 2015
842015
Effect of Si-doping on InAs nanowire transport and morphology
S Wirths, K Weis, A Winden, K Sladek, C Volk, S Alagha, TE Weirich, ...
Journal of applied physics 110 (5), 053709, 2011
672011
Tensely strained GeSn alloys as optical gain media
S Wirths, Z Ikonic, AT Tiedemann, B Holländer, T Stoica, G Mussler, ...
Applied physics letters 103 (19), 192110, 2013
632013
Optical Transitions in Direct-Bandgap Ge1–xSnx Alloys
D Stange, S Wirths, N von den Driesch, G Mussler, T Stoica, Z Ikonic, ...
ACS Photonics 2 (11), 1539-1545, 2015
612015
Reduced pressure CVD growth of Ge and Ge1− xSnx alloys
S Wirths, D Buca, G Mussler, AT Tiedemann, B Holländer, P Bernardy, ...
ECS Journal of Solid State Science and Technology 2 (5), N99-N102, 2013
592013
Epitaxial growth of highly compressively strained GeSn alloys up to 12.5% Sn
M Oehme, D Buca, K Kostecki, S Wirths, B Holländer, E Kasper, J Schulze
Journal of crystal growth 384, 71-76, 2013
572013
Study of GeSn based heterostructures: towards optimized group IV MQW LEDs
D Stange, N Von Den Driesch, D Rainko, C Schulte-Braucks, S Wirths, ...
Optics express 24 (2), 1358-1367, 2016
532016
Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys
JH Fournier-Lupien, S Mukherjee, S Wirths, E Pippel, N Hayazawa, ...
Applied physics letters 103 (26), 263103, 2013
422013
High-k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors
S Wirths, D Stange, MA Pampillón, AT Tiedemann, G Mussler, A Fox, ...
ACS applied materials & interfaces 7 (1), 62-67, 2014
412014
SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications
S Wirths, D Buca, Z Ikonic, P Harrison, AT Tiedemann, B Holländer, ...
Thin Solid Films 557, 183-187, 2014
382014
High-mobility GaSb nanostructures cointegrated with InAs on Si
M Borg, H Schmid, J Gooth, MD Rossell, D Cutaia, M Knoedler, ...
ACS nano 11 (3), 2554-2560, 2017
342017
SiGeSn ternaries for efficient group IV heterostructure light emitters
N von den Driesch, D Stange, S Wirths, D Rainko, I Povstugar, A Savenko, ...
Small 13 (16), 1603321, 2017
302017
Ballistic one-dimensional InAs nanowire cross-junction interconnects
J Gooth, M Borg, H Schmid, V Schaller, S Wirths, K Moselund, M Luisier, ...
Nano letters 17 (4), 2596-2602, 2017
272017
Epitaxial growth of Ge1-xSnx by reduced pressure CVD using SnCl4 and Ge2H6
S Wirths, D Buca, AT Tiedemann, B Holländer, P Bernardy, T Stoica, ...
ECS Transactions 50 (9), 885-893, 2013
242013
Towards Nanowire Tandem Junction Solar Cells on Silicon
MT Borgström, MH Magnusson, F Dimroth, G Siefer, O Höhn, H Riel, ...
IEEE Journal of Photovoltaics 8 (3), 733 - 740, 2018
232018
Ternary and quaternary Ni (Si) Ge (Sn) contact formation for highly strained Ge p-and n-MOSFETs
S Wirths, R Troitsch, G Mussler, JM Hartmann, P Zaumseil, T Schroeder, ...
Semiconductor science and technology 30 (5), 055003, 2015
232015
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