Matteo Bosi
Matteo Bosi
IMEM - CNR, Area delle Scienze 37A, 43124 Parma, Italy
Verified email at - Homepage
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The potential of III‐V semiconductors as terrestrial photovoltaic devices
M Bosi, C Pelosi
Progress in Photovoltaics: Research and Applications 15 (1), 51-68, 2007
The real structure of ε-Ga 2 O 3 and its relation to κ-phase
I Cora, F Mezzadri, F Boschi, M Bosi, M Čaplovičová, G Calestani, ...
CrystEngComm 19 (11), 1509-1516, 2017
Crystal Structure and Ferroelectric Properties of ε-Ga2O3 Films Grown on (0001)-Sapphire
F Mezzadri, G Calestani, F Boschi, D Delmonte, M Bosi, R Fornari
Inorganic chemistry 55 (22), 12079-12084, 2016
Growth and synthesis of mono and few-layers transition metal dichalcogenides by vapour techniques: a review
M Bosi
RSC Advances 5 (92), 75500-75518, 2015
Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD
F Boschi, M Bosi, T Berzina, E Buffagni, C Ferrari, R Fornari
Journal of Crystal Growth 443, 25-30, 2016
Germanium: Epitaxy and its applications
M Bosi, G Attolini
Progress in Crystal Growth and Characterization of Materials 56 (3-4), 146-174, 2010
Review on atomic layer deposition and applications of oxide thin films
JS Ponraj, G Attolini, M Bosi
Critical reviews in solid state and materials sciences 38 (3), 203-233, 2013
A study of Indium incorporation efficiency in InGaN grown by MOVPE
M Bosi, R Fornari
Journal of crystal growth 265 (3-4), 434-439, 2004
ε-Ga2O3 epilayers as a material for solar-blind UV photodetectors
M Pavesi, F Fabbri, F Boschi, G Piacentini, A Baraldi, M Bosi, E Gombia, ...
Materials Chemistry and Physics 205, 502-507, 2018
Thermal stability of ε-Ga2O3 polymorph
R Fornari, M Pavesi, V Montedoro, D Klimm, F Mezzadri, I Cora, B Pécz, ...
Acta Materialia 140, 411-416, 2017
Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation
A Lohrmann, S Castelletto, JR Klein, T Ohshima, M Bosi, M Negri, ...
Applied Physics Letters 108 (2), 021107, 2016
Synthesis and characterization of 3C–SiC nanowires
G Attolini, F Rossi, M Bosi, BE Watts, G Salviati
Journal of Non-Crystalline Solids 354 (47-51), 5227-5229, 2008
Growth and characterization of 3C-SiC films for micro electro mechanical systems (MEMS) applications
M Bosi, BE Watts, G Attolini, C Ferrari, C Frigeri, G Salviati, A Poggi, ...
Crystal growth & design 9 (11), 4852-4859, 2009
Optimization of a buffer layer for cubic silicon carbide growth on silicon substrates
M Bosi, G Attolini, M Negri, C Frigeri, E Buffagni, C Ferrari, T Rimoldi, ...
Journal of Crystal Growth 383, 84-94, 2013
MOVPE growth of homoepitaxial germanium
M Bosi, G Attolini, C Ferrari, C Frigeri, JCR Herrera, E Gombia, C Pelosi, ...
Journal of crystal growth 310 (14), 3282-3286, 2008
The electronic structure of ε-Ga2O3
M Mulazzi, F Reichmann, A Becker, WM Klesse, P Alippi, V Fiorentini, ...
APL Materials 7 (2), 022522, 2019
Experimental and numerical characterization of a direct solenoid actuation injector for Diesel engine applications
L Postrioti, S Malaguti, M Bosi, G Buitoni, S Piccinini, G Bagli
Fuel 118, 316-328, 2014
A new growth method for the synthesis of 3C–SiC nanowires
G Attolini, F Rossi, F Fabbri, M Bosi, BE Watts, G Salviati
Materials Letters 63 (29), 2581-2583, 2009
Integration of single-photon emitters into 3C-SiC microdisk resonators
A Lohrmann, TJ Karle, VK Sewani, A Laucht, M Bosi, M Negri, ...
ACS Photonics 4 (3), 462-468, 2017
Tuning the radial structure of core–shell silicon carbide nanowires
M Negri, SC Dhanabalan, G Attolini, P Lagonegro, M Campanini, M Bosi, ...
CrystEngComm 17 (6), 1258-1263, 2015
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