| The potential of III‐V semiconductors as terrestrial photovoltaic devices M Bosi, C Pelosi Progress in Photovoltaics: Research and Applications 15 (1), 51-68, 2007 | 211 | 2007 |
| Crystal Structure and Ferroelectric Properties of ε-Ga2O3 Films Grown on (0001)-Sapphire F Mezzadri, G Calestani, F Boschi, D Delmonte, M Bosi, R Fornari Inorganic chemistry 55 (22), 12079-12084, 2016 | 97 | 2016 |
| Growth and synthesis of mono and few-layers transition metal dichalcogenides by vapour techniques: a review M Bosi RSC Advances 5 (92), 75500-75518, 2015 | 93 | 2015 |
| The real structure of ε-Ga 2 O 3 and its relation to κ-phase I Cora, F Mezzadri, F Boschi, M Bosi, M Čaplovičová, G Calestani, ... CrystEngComm 19 (11), 1509-1516, 2017 | 89 | 2017 |
| Germanium: Epitaxy and its applications M Bosi, G Attolini Progress in Crystal Growth and Characterization of Materials 56 (3-4), 146-174, 2010 | 81 | 2010 |
| Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD F Boschi, M Bosi, T Berzina, E Buffagni, C Ferrari, R Fornari Journal of Crystal Growth 443, 25-30, 2016 | 78 | 2016 |
| Review on atomic layer deposition and applications of oxide thin films JS Ponraj, G Attolini, M Bosi Critical reviews in solid state and materials sciences 38 (3), 203-233, 2013 | 78 | 2013 |
| A study of Indium incorporation efficiency in InGaN grown by MOVPE M Bosi, R Fornari Journal of crystal growth 265 (3-4), 434-439, 2004 | 63 | 2004 |
| ε-Ga2O3 epilayers as a material for solar-blind UV photodetectors M Pavesi, F Fabbri, F Boschi, G Piacentini, A Baraldi, M Bosi, E Gombia, ... Materials Chemistry and Physics 205, 502-507, 2018 | 50 | 2018 |
| Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation A Lohrmann, S Castelletto, JR Klein, T Ohshima, M Bosi, M Negri, ... Applied Physics Letters 108 (2), 021107, 2016 | 42 | 2016 |
| Growth and characterization of 3C-SiC films for micro electro mechanical systems (MEMS) applications M Bosi, BE Watts, G Attolini, C Ferrari, C Frigeri, G Salviati, A Poggi, ... Crystal growth & design 9 (11), 4852-4859, 2009 | 39 | 2009 |
| Synthesis and characterization of 3C–SiC nanowires G Attolini, F Rossi, M Bosi, BE Watts, G Salviati Journal of Non-Crystalline Solids 354 (47-51), 5227-5229, 2008 | 39 | 2008 |
| Thermal stability of ε-Ga2O3 polymorph R Fornari, M Pavesi, V Montedoro, D Klimm, F Mezzadri, I Cora, B Pécz, ... Acta Materialia 140, 411-416, 2017 | 37 | 2017 |
| Optimization of a buffer layer for cubic silicon carbide growth on silicon substrates M Bosi, G Attolini, M Negri, C Frigeri, E Buffagni, C Ferrari, T Rimoldi, ... Journal of crystal growth 383, 84-94, 2013 | 36 | 2013 |
| MOVPE growth of homoepitaxial germanium M Bosi, G Attolini, C Ferrari, C Frigeri, JCR Herrera, E Gombia, C Pelosi, ... Journal of crystal growth 310 (14), 3282-3286, 2008 | 34 | 2008 |
| A new growth method for the synthesis of 3C–SiC nanowires G Attolini, F Rossi, F Fabbri, M Bosi, BE Watts, G Salviati Materials Letters 63 (29), 2581-2583, 2009 | 30 | 2009 |
| Experimental and numerical characterization of a direct solenoid actuation injector for Diesel engine applications L Postrioti, S Malaguti, M Bosi, G Buitoni, S Piccinini, G Bagli Fuel 118, 316-328, 2014 | 24 | 2014 |
| Integration of single-photon emitters into 3C-SiC microdisk resonators A Lohrmann, TJ Karle, VK Sewani, A Laucht, M Bosi, M Negri, ... ACS Photonics 4 (3), 462-468, 2017 | 23 | 2017 |
| Tuning the radial structure of core–shell silicon carbide nanowires M Negri, SC Dhanabalan, G Attolini, P Lagonegro, M Campanini, M Bosi, ... CrystEngComm 17 (6), 1258-1263, 2015 | 23 | 2015 |
| Logic with memory: and gates made of organic and inorganic memristive devices G Baldi, S Battistoni, G Attolini, M Bosi, C Collini, S Iannotta, L Lorenzelli, ... Semiconductor Science and Technology 29 (10), 104009, 2014 | 22 | 2014 |
Claudio FerrariIstituto IMEM Consiglio Nazionale delle RicercheEmail verificata su imem.cnr.it
