Matteo Bosi

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Roberto FornariProfessor of Physics, University of Parma, ItalyEmail verificata su unipr.it
Francesca RossiIMEM-CNREmail verificata su imem.cnr.it
Giancarlo SalviatiDirector of Research Associated, Project leader, IMEM-CNREmail verificata su cnr.it
Bernard WattsIMEMEmail verificata su cnr.it
Marco NegriAxcelis technologiesEmail verificata su axcelis.com
Filippo FabbriCNR NANOEmail verificata su nano.cnr.it
Pecz BEmail verificata su mfa.kfki.hu
Elisa BuffagniEmail verificata su imem.cnr.it
Joice Sophia PonrajDirector & ADI Researcher, Aaivalayam Dynamic Integrated Research Academy and CorporationsEmail verificata su aaivalayam.com
Francesco MezzadriUniversità degli studi di ParmaEmail verificata su unipr.it
Musayeva Nahida Nazimleading Scientific researcher, Associate professor, Institute of Physics, ANASEmail verificata su physics.ab.az
Antonella Parisiniassociated professor University of ParmaEmail verificata su unipr.it
Abdullah YILDIZProf. Dr. at Ankara Yıldırım Beyazıt UniversityEmail verificata su ybu.edu.tr
Luca SeravalliIMEM-CNR Institute, Parma, ItalyEmail verificata su imem.cnr.it
marco calicchioRicerca sistema energetico RSEEmail verificata su rse-web.it
Mehmet KASAPSteuerberater / CPAEmail verificata su mehmetkasap.com.tr
roberto verucchiIMEM-CNR, sede di TrentoEmail verificata su cnr.it
Sathish Chander DhanabalanCo-Director & ADI Researcher, Center for Advanced Materials, Aaivalayam-DIRAC, Coimbatore, IndiaEmail verificata su aaivalayam.com
Jeffrey McCallumUniversity of MelbourneEmail verificata su unimelb.edu.au
Brett C JohnsonRMIT UniversityEmail verificata su rmit.edu.au

Matteo Bosi

IMEM - CNR, Area delle Scienze 37A, 43124 Parma, Italy

Email verificata su imem.cnr.it

Silicon Carbide III-V Germanium Solar Cell MEMS


Titolo Ordina per citazioni Ordina per anno Ordina per titolo	Citata da Citata da	Anno
The potential of III‐V semiconductors as terrestrial photovoltaic devices M Bosi, C Pelosi Progress in Photovoltaics: Research and Applications 15 (1), 51-68, 2007	218	2007
Crystal Structure and Ferroelectric Properties of ε-Ga₂O₃ Films Grown on (0001)-Sapphire F Mezzadri, G Calestani, F Boschi, D Delmonte, M Bosi, R Fornari Inorganic chemistry 55 (22), 12079-12084, 2016	110	2016
Growth and synthesis of mono and few-layers transition metal dichalcogenides by vapour techniques: a review M Bosi RSC Advances 5 (92), 75500-75518, 2015	103	2015
The real structure of ε-Ga 2 O 3 and its relation to κ-phase I Cora, F Mezzadri, F Boschi, M Bosi, M Čaplovičová, G Calestani, ... CrystEngComm 19 (11), 1509-1516, 2017	102	2017
Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD F Boschi, M Bosi, T Berzina, E Buffagni, C Ferrari, R Fornari Journal of Crystal Growth 443, 25-30, 2016	92	2016
Germanium: Epitaxy and its applications M Bosi, G Attolini Progress in Crystal Growth and Characterization of Materials 56 (3-4), 146-174, 2010	87	2010
Review on atomic layer deposition and applications of oxide thin films JS Ponraj, G Attolini, M Bosi Critical reviews in solid state and materials sciences 38 (3), 203-233, 2013	81	2013
ε-Ga2O3 epilayers as a material for solar-blind UV photodetectors M Pavesi, F Fabbri, F Boschi, G Piacentini, A Baraldi, M Bosi, E Gombia, ... Materials Chemistry and Physics 205, 502-507, 2018	60	2018
A study of Indium incorporation efficiency in InGaN grown by MOVPE M Bosi, R Fornari Journal of crystal growth 265 (3-4), 434-439, 2004	60	2004
Thermal stability of ε-Ga2O3 polymorph R Fornari, M Pavesi, V Montedoro, D Klimm, F Mezzadri, I Cora, B Pécz, ... Acta Materialia 140, 411-416, 2017	48	2017
Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation A Lohrmann, S Castelletto, JR Klein, T Ohshima, M Bosi, M Negri, ... Applied Physics Letters 108 (2), 021107, 2016	45	2016
Synthesis and characterization of 3C–SiC nanowires G Attolini, F Rossi, M Bosi, BE Watts, G Salviati Journal of Non-Crystalline Solids 354 (47-51), 5227-5229, 2008	39	2008
Growth and characterization of 3C-SiC films for micro electro mechanical systems (MEMS) applications M Bosi, BE Watts, G Attolini, C Ferrari, C Frigeri, G Salviati, A Poggi, ... Crystal growth & design 9 (11), 4852-4859, 2009	38	2009
MOVPE growth of homoepitaxial germanium M Bosi, G Attolini, C Ferrari, C Frigeri, JCR Herrera, E Gombia, C Pelosi, ... Journal of crystal growth 310 (14), 3282-3286, 2008	36	2008
Optimization of a buffer layer for cubic silicon carbide growth on silicon substrates M Bosi, G Attolini, M Negri, C Frigeri, E Buffagni, C Ferrari, T Rimoldi, ... Journal of Crystal Growth 383, 84-94, 2013	35	2013
A new growth method for the synthesis of 3C–SiC nanowires G Attolini, F Rossi, F Fabbri, M Bosi, BE Watts, G Salviati Materials Letters 63 (29), 2581-2583, 2009	30	2009
The electronic structure of ε-Ga₂O₃ M Mulazzi, F Reichmann, A Becker, WM Klesse, P Alippi, V Fiorentini, ... APL Materials 7 (2), 022522, 2019	28	2019
Experimental and numerical characterization of a direct solenoid actuation injector for Diesel engine applications L Postrioti, S Malaguti, M Bosi, G Buitoni, S Piccinini, G Bagli Fuel 118, 316-328, 2014	28	2014
Tuning the radial structure of core–shell silicon carbide nanowires M Negri, SC Dhanabalan, G Attolini, P Lagonegro, M Campanini, M Bosi, ... CrystEngComm 17 (6), 1258-1263, 2015	25	2015
Integration of single-photon emitters into 3C-SiC microdisk resonators A Lohrmann, TJ Karle, VK Sewani, A Laucht, M Bosi, M Negri, ... ACS Photonics 4 (3), 462-468, 2017	24	2017

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