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Yurii Maidaniuk
Yurii Maidaniuk
PhD
Verified email at uark.edu
Title
Cited by
Cited by
Year
Monolithically integrated InAs/GaAs quantum dot mid-infrared photodetectors on silicon substrates
J Wu, Q Jiang, S Chen, M Tang, YI Mazur, Y Maidaniuk, M Benamara, ...
ACS Photonics 3 (5), 749-753, 2016
762016
Demonstration of InAs/InGaAs/GaAs quantum dots-in-a-well mid-wave infrared photodetectors grown on silicon substrate
W Chen, Z Deng, D Guo, Y Chen, YI Mazur, Y Maidaniuk, M Benamara, ...
Journal of Lightwave Technology 36 (13), 2572-2581, 2018
442018
Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness
Y Wang, X Sheng, Q Guo, X Li, S Wang, G Fu, YI Mazur, Y Maidaniuk, ...
Nanoscale Research Letters 12 (1), 229, 2017
312017
Si-doped InAs/GaAs quantum-dot solar cell with AlAs cap layers
D Kim, M Tang, J Wu, S Hatch, Y Maidaniuk, V Dorogan, YI Mazur, ...
IEEE Journal of Photovoltaics 6 (4), 906-911, 2016
262016
Crystalline GaAs Thin Film Growth on a c-Plane Sapphire Substrate
SK Saha, R Kumar, A Kuchuk, MZ Alavijeh, Y Maidaniuk, YI Mazur, SQ Yu, ...
Crystal Growth & Design 19 (9), 5088-5096, 2019
232019
Two-colour In0. 5Ga0. 5As quantum dot infrared photodetectors on silicon
D Guo, Q Jiang, M Tang, S Chen, YI Mazur, Y Maidaniuk, M Benamara, ...
Semiconductor Science and Technology 33 (9), 094009, 2018
232018
Excitation intensity and thickness dependent emission mechanism from an ultrathin InAs layer in GaAs matrix
R Kumar, Y Maidaniuk, A Kuchuk, SK Saha, PK Ghosh, YI Mazur, ...
Journal of Applied Physics 124 (23), 235303, 2018
172018
Local strain and crystalline defects in GaN/AlGaN/GaN (0001) heterostructures induced by compositionally graded AlGaN buried layers
HV Stanchu, AV Kuchuk, YI Mazur, C Li, PM Lytvyn, M Schmidbauer, ...
Crystal Growth & Design 19 (1), 200-210, 2018
142018
Carrier dynamics in hybrid nanostructure with electronic coupling from an InGaAs quantum well to InAs quantum dots
Y Wang, X Sheng, Q Yuan, Q Guo, S Wang, G Fu, B Liang, DL Huffaker, ...
Journal of Luminescence 202, 20-26, 2018
142018
Al0. 2Ga0. 8As solar cells monolithically grown on Si and GaAs by MBE for III-V/Si tandem dual-junction applications
A Onno, J Wu, Q Jiang, S Chen, M Tang, Y Maidaniuk, M Benamara, ...
Energy Procedia 92, 661-668, 2016
142016
Optical and structural study of deformation states in the GaN/AlN superlattices
O Kolomys, B Tsykaniuk, V Strelchuk, A Naumov, V Kladko, YI Mazur, ...
Journal of Applied Physics 122 (15), 155302, 2017
132017
Evolution of InAs quantum dots and wetting layer on GaAs (001): Peculiar photoluminescence near onset of quantum dot formation
R Kumar, Y Maidaniuk, SK Saha, YI Mazur, GJ Salamo
Journal of Applied Physics 127 (6), 065306, 2020
112020
Abnormal photoluminescence for GaAs/Al0. 2Ga0. 8As quantum dot-ring hybrid nanostructure grown by droplet epitaxy
L Su, B Liang, Y Wang, Q Yuan, Q Guo, S Wang, G Fu, DL Huffaker, ...
Journal of Luminescence 195, 187-192, 2018
112018
InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot
N Alnami, R Kumar, A Kuchuk, Y Maidaniuk, SK Saha, AA Alnami, ...
Solar Energy Materials and Solar Cells 224, 111026, 2021
92021
Strain relaxation in GaN/AlN superlattices on GaN (0001) substrate: Combined superlattice-to-substrate lattice misfit and thickness-dependent effects
HV Stanchu, AV Kuchuk, PM Lytvyn, YI Mazur, Y Maidaniuk, M Benamara, ...
Materials & Design 157, 141-150, 2018
92018
GaAs layer on c-plane sapphire for light emitting sources
R Kumar, SK Saha, A Kuchuk, Y Maidaniuk, FM de Oliveira, Q Yan, ...
Applied Surface Science 542, 148554, 2021
72021
Kinetically controlled transition from 2D nanostructured films to 3D multifaceted InN nanocrystals on GaN (0001)
HV Stanchu, AV Kuchuk, PM Lytvyn, YI Mazur, ME Ware, Y Maidaniuk, ...
CrystEngComm 20 (11), 1499-1508, 2018
72018
Effect of indium accumulation on the growth and properties of ultrathin In (Ga) N/GaN quantum wells
C Li, Y Maidaniuk, AV Kuchuk, YI Mazur, M Benamara, ME Ware, ...
Materials & Design 190, 108565, 2020
62020
Investigation of the Structural and Optical Properties of Compositionally V‐Graded Strained InxGa1–xN Layers
PK Ghosh, HV Stanchu, Y Maidaniuk, M Sarollahi, M Aldawsari, ...
physica status solidi (b) 257 (4), 1900591, 2020
62020
Growth kinetics and nanoscale structure-property relationships of InN nanostructures on GaN (0 0 0 1)
PM Lytvyn, SP Minor, AV Kuchuk, SV Kondratenko, YI Mazur, ...
Applied Surface Science 537, 147997, 2021
52021
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