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Songlin Li
Songlin Li
Other names黎松林
Nanjing University, Jiangsu, China
Verified email at nju.edu.cn - Homepage
Title
Cited by
Cited by
Year
Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors
SL Li, K Tsukagoshi, E Orgiu, P Samorě
Chemical Society Reviews 45 (1), 118-151, 2016
5312016
Ambipolar MoTe2 Transistors and Their Applications in Logic Circuits
YF Lin, Y Xu, ST Wang, SL Li, M Yamamoto, A Aparecido‐Ferreira, W Li, ...
Advanced Materials 26 (20), 3263-3269, 2014
4572014
Quantitative Raman spectrum and reliable thickness identification for atomic layers on insulating substrates
SL Li, H Miyazaki, H Song, H Kuramochi, S Nakaharai, K Tsukagoshi
ACS nano 6 (8), 7381-7388, 2012
3942012
Simultaneous Contact and Grain‐Boundary Passivation in Planar Perovskite Solar Cells Using SnO2‐KCl Composite Electron Transport Layer
P Zhu, S Gu, X Luo, Y Gao, S Li, J Zhu, H Tan
Advanced Energy Materials 10 (3), 1903083, 2020
3622020
Thickness-dependent interfacial coulomb scattering in atomically thin field-effect transistors
SL Li, K Wakabayashi, Y Xu, S Nakaharai, K Komatsu, WW Li, YF Lin, ...
Nano letters 13 (8), 3546-3552, 2013
3592013
Analyzing the Carrier Mobility in Transition‐Metal Dichalcogenide MoS2 Field‐Effect Transistors
Z Yu, ZY Ong, S Li, JB Xu, G Zhang, YW Zhang, Y Shi, X Wang
Advanced Functional Materials 27 (19), 1604093, 2017
3412017
Strong Enhancement of Raman Scattering from a Bulk-Inactive Vibrational Mode in Few-Layer MoTe2
M Yamamoto, ST Wang, M Ni, YF Lin, SL Li, S Aikawa, WB Jian, K Ueno, ...
Acs Nano 8 (4), 3895-3903, 2014
3302014
High-performance top-gated monolayer SnS 2 field-effect transistors and their integrated logic circuits
HS Song, SL Li, L Gao, Y Xu, K Ueno, J Tang, YB Cheng, K Tsukagoshi
Nanoscale 5 (20), 9666-9670, 2013
3152013
Coherent Coupling of WS2 Monolayers with Metallic Photonic Nanostructures at Room Temperature
S Wang, S Li, T Chervy, A Shalabney, S Azzini, E Orgiu, JA Hutchison, ...
Nano letters 16 (7), 4368-4374, 2016
3072016
Low‐Cost Fully Transparent Ultraviolet Photodetectors Based on Electrospun ZnO‐SnO2 Heterojunction Nanofibers
W Tian, T Zhai, C Zhang, SL Li, X Wang, F Liu, D Liu, X Cai, K Tsukagoshi, ...
Advanced Materials 25 (33), 4625-4630, 2013
3012013
Flexible Ultraviolet Photodetectors with Broad Photoresponse Based on Branched ZnS‐ZnO Heterostructure Nanofilms
W Tian, C Zhang, T Zhai, SL Li, X Wang, J Liu, X Jie, D Liu, M Liao, ...
Advanced Materials 26 (19), 3088-3093, 2014
2682014
Origin of the relatively low transport mobility of graphene grown through chemical vapor deposition
HS Song, SL Li, H Miyazaki, S Sato, K Hayashi, A Yamada, N Yokoyama, ...
Scientific reports 2, 337, 2012
2352012
Thickness scaling effect on interfacial barrier and electrical contact to two-dimensional MoS2 layers
SL Li, K Komatsu, S Nakaharai, YF Lin, M Yamamoto, X Duan, ...
ACS nano 8 (12), 12836-12842, 2014
1822014
Low operating bias and matched input− output characteristics in graphene logic inverters
SL Li, H Miyazaki, A Kumatani, A Kanda, K Tsukagoshi
Nano letters 10 (7), 2357-2362, 2010
1462010
Electrostatically Reversible Polarity of Ambipolar α-MoTe2 Transistors
S Nakaharai, M Yamamoto, K Ueno, YF Lin, SL Li, K Tsukagoshi
ACS nano 9 (6), 5976-5983, 2015
1382015
InSe: a two-dimensional material with strong interlayer coupling
Y Sun, S Luo, XG Zhao, K Biswas, SL Li, L Zhang
Nanoscale 10 (17), 7991-7998, 2018
1132018
Flexible SnO 2 hollow nanosphere film based high-performance ultraviolet photodetector
W Tian, C Zhang, T Zhai, SL Li, X Wang, M Liao, K Tsukagoshi, D Golberg, ...
Chemical communications 49 (36), 3739-3741, 2013
1032013
Conduction tuning of graphene based on defect-induced localization
S Nakaharai, T Iijima, S Ogawa, S Suzuki, SL Li, K Tsukagoshi, S Sato, ...
ACS nano 7 (7), 5694-5700, 2013
992013
Integration of High‐k Oxide on MoS2 by Using Ozone Pretreatment for High‐Performance MoS2 Top‐Gated Transistor with Thickness‐Dependent Carrier …
J Wang, S Li, X Zou, J Ho, L Liao, X Xiao, C Jiang, W Hu, J Wang, J Li
small 11 (44), 5932-5938, 2015
922015
Suppression of thermally activated carrier transport in atomically thin MoS 2 on crystalline hexagonal boron nitride substrates
MY Chan, K Komatsu, SL Li, Y Xu, P Darmawan, H Kuramochi, ...
Nanoscale 5 (20), 9572-9576, 2013
872013
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