Analysis of enhanced light emission from highly strained germanium microbridges MJ Süess, R Geiger, RA Minamisawa, G Schiefler, J Frigerio, D Chrastina, ...
Nature Photonics 7 (6), 466-472, 2013
375 2013 Integrated germanium optical interconnects on silicon substrates P Chaisakul, D Marris-Morini, J Frigerio, D Chrastina, MS Rouifed, ...
Nature Photonics 8 (6), 482-488, 2014
183 2014 Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices G Isella, D Chrastina, B Rössner, T Hackbarth, HJ Herzog, U König, ...
Solid-State Electronics 48 (8), 1317-1323, 2004
183 2004 Scaling hetero-epitaxy from layers to three-dimensional crystals CV Falub, H von Känel, F Isa, R Bergamaschini, A Marzegalli, ...
Science 335 (6074), 1330-1334, 2012
170 2012 Midinfrared plasmon-enhanced spectroscopy with germanium antennas on silicon substrates L Baldassarre, E Sakat, J Frigerio, A Samarelli, K Gallacher, E Calandrini, ...
Nano letters 15 (11), 7225-7231, 2015
155 2015 23 GHz Ge/SiGe multiple quantum well electro-absorption modulator P Chaisakul, D Marris-Morini, MS Rouifed, G Isella, D Chrastina, ...
Optics Express 20 (3), 3219-3224, 2012
132 2012 Direct-gap gain and optical absorption in germanium correlated to the density of photoexcited carriers, doping, and strain L Carroll, P Friedli, S Neuenschwander, H Sigg, S Cecchi, F Isa, ...
Physical review letters 109 (5), 057402, 2012
104 2012 Optical spin injection and spin lifetime in Ge heterostructures F Pezzoli, F Bottegoni, D Trivedi, F Ciccacci, A Giorgioni, P Li, S Cecchi, ...
Physical review letters 108 (15), 156603, 2012
103 2012 Very high hole mobilities in modulation-doped Ge quantum wells grown by low-energy plasma enhanced chemical vapor deposition H Känel, M Kummer, G Isella, E Müller, T Hackbarth
Applied physics letters 80 (16), 2922-2924, 2002
101 2002 Scattering mechanisms in high-mobility strained Ge channels B Rössner, D Chrastina, G Isella, H Von Känel
Applied Physics Letters 84 (16), 3058-3060, 2004
97 2004 Ultralow dark current Ge/Si (100) photodiodes with low thermal budget J Osmond, G Isella, D Chrastina, R Kaufmann, M Acciarri, H Von Känel
Applied physics letters 94 (20), 201106, 2009
96 2009 Raman spectroscopy determination of composition and strain in Si1-xGex/Si heterostructures F Pezzoli, E Bonera, E Grilli, M Guzzi, S Sanguinetti, D Chrastina, G Isella, ...
Materials science in semiconductor processing 11 (5-6), 279-284, 2008
88 2008 Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers M Bonfanti, E Grilli, M Guzzi, M Virgilio, G Grosso, D Chrastina, G Isella, ...
Physical Review B 78 (4), 041407, 2008
87 2008 Ultrafast nonlinear optical response of photoexcited Ge/SiGe quantum wells: Evidence for a femtosecond transient population inversion C Lange, NS Köster, S Chatterjee, H Sigg, D Chrastina, G Isella, ...
Physical Review B 79 (20), 201306, 2009
86 2009 Excess carrier lifetimes in Ge layers on Si R Geiger, J Frigerio, MJ Süess, D Chrastina, G Isella, R Spolenak, J Faist, ...
Applied Physics Letters 104 (6), 062106, 2014
81 2014 Phonon strain shift coefficients in F Pezzoli, E Bonera, E Grilli, M Guzzi, S Sanguinetti, D Chrastina, G Isella, ...
Journal of applied physics 103 (9), 093521, 2008
78 2008 Quantum-confined Stark effect measurements in Ge/SiGe quantum-well structures P Chaisakul, D Marris-Morini, G Isella, D Chrastina, X Le Roux, E Gatti, ...
Optics letters 35 (17), 2913-2915, 2010
75 2010 The thermoelectric properties of Ge/SiGe modulation doped superlattices A Samarelli, L Ferre Llin, S Cecchi, J Frigerio, T Etzelstorfer, E Müller, ...
Journal of applied physics 113 (23), 233704, 2013
74 2013 Graded SiGe waveguides with broadband low-loss propagation in the mid infrared JM Ramirez, Q Liu, V Vakarin, J Frigerio, A Ballabio, X Le Roux, ...
Optics express 26 (2), 870-877, 2018
71 2018 Tunability of the dielectric function of heavily doped germanium thin films for mid-infrared plasmonics J Frigerio, A Ballabio, G Isella, E Sakat, G Pellegrini, P Biagioni, M Bollani, ...
Physical Review B 94 (8), 085202, 2016
67 2016 
Daniel ChrastinaResearcher, Politecnico di MilanoEmail verificata su polimi.it
