| The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials T Knobloch, YY Illarionov, F Ducry, C Schleich, S Wachter, K Watanabe, ... Nature Electronics 4 (2), 98-108, 2021 | 207 | 2021 |
| The role of charge trapping in MoS2/SiO2 and MoS2/hBN field-effect transistors YY Illarionov, G Rzepa, M Waltl, T Knobloch, A Grill, MM Furchi, T Mueller, ... 2D Materials 3 (3), 035004, 2016 | 207 | 2016 |
| Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors YY Illarionov, AG Banshchikov, DK Polyushkin, S Wachter, T Knobloch, ... Nature Electronics 2 (6), 230-235, 2019 | 191 | 2019 |
| Long-term stability and reliability of black phosphorus field-effect transistors YY Illarionov, M Waltl, G Rzepa, JS Kim, S Kim, A Dodabalapur, ... ACS nano 10 (10), 9543-9549, 2016 | 180 | 2016 |
| Comphy—A compact-physics framework for unified modeling of BTI G Rzepa, J Franco, B O’Sullivan, A Subirats, M Simicic, G Hellings, ... Microelectronics Reliability 85, 49-65, 2018 | 164 | 2018 |
| On the microscopic structure of hole traps in pMOSFETs T Grasser, W Goes, Y Wimmer, F Schanovsky, G Rzepa, M Waltl, K Rott, ... 2014 IEEE International Electron Devices Meeting, 21.1. 1-21.1. 4, 2014 | 113 | 2014 |
| A unified perspective of RTN and BTI T Grasser, K Rott, H Reisinger, M Waltl, J Franco, B Kaczer 2014 IEEE International Reliability Physics Symposium, 4A. 5.1-4A. 5.7, 2014 | 113 | 2014 |
| Improved Hysteresis and Reliability of MoS2 Transistors With High-Quality CVD Growth and Al2O3 Encapsulation YY Illarionov, KKH Smithe, M Waltl, T Knobloch, E Pop, T Grasser IEEE Electron Device Letters 38 (12), 1763-1766, 2017 | 105 | 2017 |
| NBTI in nanoscale MOSFETs—The ultimate modeling benchmark T Grasser, K Rott, H Reisinger, M Waltl, F Schanovsky, B Kaczer IEEE Transactions on Electron Devices 61 (11), 3586-3593, 2014 | 72 | 2014 |
| Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors B Stampfer, F Zhang, YY Illarionov, T Knobloch, P Wu, M Waltl, A Grill, ... ACS nano 12 (6), 5368-5375, 2018 | 60 | 2018 |
| A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability B Kaczer, J Franco, P Weckx, PJ Roussel, V Putcha, E Bury, M Simicic, ... Microelectronics Reliability 81, 186-194, 2018 | 60 | 2018 |
| Advanced characterization of oxide traps: The dynamic time-dependent defect spectroscopy T Grasser, K Rott, H Reisinger, PJ Wagner, W Gös, F Schanovsky, M Waltl, ... 2013 IEEE International Reliability Physics Symposium (IRPS), 2D. 2.1-2D. 2.7, 2013 | 60 | 2013 |
| A Physical Model for the Hysteresis in MoS2 Transistors T Knobloch, G Rzepa, YY Illarionov, M Waltl, F Schanovsky, B Stampfer, ... IEEE Journal of the Electron Devices Society 6, 972-978, 2018 | 59 | 2018 |
| Energetic mapping of oxide traps in MoS2 field-effect transistors YY Illarionov, T Knobloch, M Waltl, G Rzepa, A Pospischil, DK Polyushkin, ... 2D Materials 4 (2), 025108, 2017 | 58 | 2017 |
| Gate-sided hydrogen release as the origin of" permanent" NBTI degradation: From single defects to lifetimes T Grasser, M Waltl, Y Wimmer, W Goes, R Kosik, G Rzepa, H Reisinger, ... 2015 IEEE International Electron Devices Meeting (IEDM), 20.1. 1-20.1. 4, 2015 | 58 | 2015 |
| Hydrogen-related volatile defects as the possible cause for the recoverable component of NBTI T Grasser, K Rott, H Reisinger, M Waltl, P Wagner, F Schanovsky, W Goes, ... 2013 IEEE International Electron Devices Meeting, 15.5. 1-15.5. 4, 2013 | 56 | 2013 |
| On the volatility of oxide defects: Activation, deactivation, and transformation T Grasser, M Waltl, W Goes, Y Wimmer, AM El-Sayed, AL Shluger, ... 2015 IEEE International Reliability Physics Symposium, 5A. 3.1-5A. 3.8, 2015 | 46 | 2015 |
| Highly-stable black phosphorus field-effect transistors with low density of oxide traps YY Illarionov, M Waltl, G Rzepa, T Knobloch, JS Kim, D Akinwande, ... npj 2D Materials and Applications 1 (1), 23, 2017 | 43 | 2017 |
| Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning T Knobloch, B Uzlu, YY Illarionov, Z Wang, M Otto, L Filipovic, M Waltl, ... Nature Electronics 5 (6), 356-366, 2022 | 39 | 2022 |
| Complete extraction of defect bands responsible for instabilities in n and pFinFETs G Rzepa, M Waltl, W Goes, B Kaczer, J Franco, T Chiarella, N Horiguchi, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 39 | 2016 |
