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Matteo Baldo
Matteo Baldo
Executive PhD at Politecnico di Milano and STMicroelectronics
Email verificata su polimi.it
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Citata da
Citata da
Anno
Modeling and compensation of IR drop in crosspoint accelerators of neural networks
N Lepri, M Baldo, P Mannocci, A Glukhov, V Milo, D Ielmini
IEEE Transactions on Electron Devices 69 (3), 1575-1581, 2022
192022
Modeling of virgin state and forming operation in embedded phase change memory (PCM)
M Baldo, O Melnic, M Scuderi, G Nicotra, M Borghi, E Petroni, A Motta, ...
2020 IEEE International Electron Devices Meeting (IEDM), 13.3. 1-13.3. 4, 2020
102020
Modeling of oxide-based ECRAM programming by drift-diffusion ion transport
M Baldo, D Ielmini
2021 IEEE International Memory Workshop (IMW), 1-4, 2021
8*2021
Improving Ge-rich GST ePCM reliability through BEOL engineering
A Redaelli, A Gandolfo, G Samanni, E Gomiero, E Petroni, L Scotti, ...
ESSDERC 2021-IEEE 51st European Solid-State Device Research Conference …, 2021
62021
BEOL process effects on ePCM reliability
A Redaelli, A Gandolfo, G Samanni, E Gomiero, E Petroni, L Scotti, ...
IEEE Journal of the Electron Devices Society 10, 563-568, 2022
42022
Advanced Metrics for Quantification of By‐Process Segregation beyond Ternary Systems
E Petroni, M Patelmo, A Serafini, D Codegoni, L Laurin, M Baldo, ...
physica status solidi (RRL)–Rapid Research Letters 17 (8), 2200458, 2023
32023
Modeling environment for Ge-rich GST phase change memory cells
M Baldo, L Laurin, E Petroni, G Samanni, M Allegra, E Gomiero, D Ielmini, ...
2022 IEEE International Memory Workshop (IMW), 1-4, 2022
22022
Modeling and Analysis of Virgin Ge-Rich GST Embedded Phase Change Memories
M Baldo, O Melnic, M Scudieri, G Nicotra, M Borghi, E Petroni, A Motta, ...
IEEE Transactions on Electron Devices 70 (3), 1055-1060, 2023
12023
Interaction between forming pulse and integration process flow in ePCM
M Baldo, E Petroni, L Laurin, G Samanni, O Melinc, D Ielmini, A Redaelli
2022 17th Conference on Ph. D Research in Microelectronics and Electronics …, 2022
12022
Study of Ge-Rich Ge-Sb-Te Device-Dependent Segregation for Industrial Grade Embedded Phase-Change Memory
E Petroni, M Allegra, M Baldo, L Laurin, A Serafini, L Favennec, ...
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2024
2024
TCAD Modeling of Germanium Behavior During Forming Operation in Ge-Rich ePCM
M Baldo, L Laurin, E Petroni, C Pavesi, A Motta, D Ielmini, R Annunziata, ...
2023 International Conference on Simulation of Semiconductor Processes and …, 2023
2023
Unveiling Retention Physical Mechanism of Ge-rich GST ePCM Technology
L Laurin, M Baldo, E Petroni, G Samanni, L Turconi, A Motta, M Borghi, ...
2023 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2023
2023
Enhancing reliability of a strong physical unclonable function (PUF) solution based on virgin-state phase change memory (PCM)
L Cattaneo, M Baldo, N Lepri, F Sancandi, M Borghi, E Petroni, A Serafini, ...
2023 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2023
2023
Characterization of reset state through energy activation study in Ge-GST based ePCM
M Baldo, L Turconi, A Motta, E Petroni, L Laurin, D Ielmini, A Redaelli
ESSDERC 2022-IEEE 52nd European Solid-State Device Research Conference …, 2022
2022
Study of Ge‐Rich Ge–Sb–Te Device‐Dependent Segregation for Industrial Grade Embedded Phase‐Change Memory
E Petroni, M Allegra, M Baldo, L Laurin, A Serafini, L Favennec, ...
physica status solidi (RRL)–Rapid Research Letters, 2300449, 0
RECENT PROGRESSES OF IN-MEMORY COMPUTING: MATERIALS, DEVICES AND ARCHITECTURES
D Ielmini, F Sancandi, M Farronato, S Hashemkhani, S Ricci, M Baldo, ...
BOOK OF ABSTRACTS, 23, 0
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
Articoli 1–16