Krishna Saraswat
Krishna Saraswat
Professor of Electrical Engineering, Stanford University
Verified email at stanford.edu - Homepage
TitleCited byYear
3-D ICs: A novel chip design for improving deep-submicrometer interconnect performance and systems-on-chip integration
K Banerjee, SJ Souri, P Kapur, KC Saraswat
Proceedings of the IEEE 89 (5), 602-633, 2001
11332001
Interconnect limits on gigascale integration (GSI) in the 21st century
JA Davis, R Venkatesan, A Kaloyeros, M Beylansky, SJ Souri, K Banerjee, ...
Proceedings of the IEEE 89 (3), 305-324, 2001
7392001
Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna
L Tang, SE Kocabas, S Latif, AK Okyay, DS Ly-Gagnon, KC Saraswat, ...
Nature Photonics 2 (4), 226, 2008
6512008
Germanium nanowire field-effect transistors with and high-κ gate dielectrics
D Wang, Q Wang, A Javey, R Tu, H Dai, H Kim, PC McIntyre, ...
Applied Physics Letters 83 (12), 2432-2434, 2003
5492003
Double-Gate Strained-Ge Heterostructure Tunneling FET (TFET) With record high drive currents and≪ 60mV/dec subthreshold slope
T Krishnamohan, D Kim, S Raghunathan, K Saraswat
2008 IEEE International Electron Devices Meeting, 1-3, 2008
4682008
Dopant segregation in polycrystalline silicon
MM Mandurah, KC Saraswat, CR Helms, TI Kamins
Journal of Applied Physics 51 (11), 5755-5763, 1980
4681980
Two-dimensional thermal oxidation of silicon. II. Modeling stress effects in wet oxides
DB Kao, JP Mcvittie, WD Nix, KC Saraswat
IEEE transactions on electron devices 35 (1), 25-37, 1988
4151988
Effect of scaling of interconnections on the time delay of VLSI circuits
KC Saraswat, F Mohammadi
IEEE Transactions on Electron Devices 29 (4), 645-650, 1982
4111982
Germanium MOS capacitors incorporating ultrathin high-/spl kappa/gate dielectric
CO Chui, S Ramanathan, BB Triplett, PC McIntyre, KC Saraswat
IEEE Electron Device Letters 23 (8), 473-475, 2002
4022002
On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substrates
K Martens, CO Chui, G Brammertz, B De Jaeger, D Kuzum, M Meuris, ...
IEEE Transactions on Electron Devices 55 (2), 547-556, 2008
3862008
Activation and diffusion studies of ion-implanted and dopants in germanium
CO Chui, K Gopalakrishnan, PB Griffin, JD Plummer, KC Saraswat
Applied physics letters 83 (16), 3275-3277, 2003
3402003
A sub-400/spl deg/C germanium MOSFET technology with high-/spl kappa/dielectric and metal gate
CO Chui, H Kim, D Chi, BB Triplett, PC Mcintyre, KC Saraswat
Digest. International Electron Devices Meeting,, 437-440, 2002
2932002
Thermal/microwave remote plasma multiprocessing reactor and method of use
MM Moslehi, KC Saraswat
US Patent 4,913,929, 1990
2931990
Achieving direct band gap in germanium through integration of Sn alloying and external strain
S Gupta, B Magyari-Köpe, Y Nishi, KC Saraswat
Journal of Applied Physics 113 (7), 073707, 2013
2902013
Electrical and materials properties of gate dielectrics grown by atomic layer chemical vapor deposition
CM Perkins, BB Triplett, PC McIntyre, KC Saraswat, S Haukka, ...
Applied Physics Letters 78 (16), 2357-2359, 2001
2882001
Low-leakage germanium-seeded laterally-crystallized single-grain 100-nm TFTs for vertical integration applications
V Subramanian, M Toita, NR Ibrahim, SJ Souri, KC Saraswat
IEEE Electron Device Letters 20 (7), 341-343, 1999
2881999
Two-dimensional thermal oxidation of silicon—I. Experiments
DB Kao, JP McVittie, WD Nix, KC Saraswat
IEEE Transactions on Electron Devices 34 (5), 1008-1017, 1987
2761987
The effect of fluorine in silicon dioxide gate dielectrics
PJ Wright, KC Saraswat
IEEE Transactions on Electron Devices 36 (5), 879-889, 1989
2741989
Effects of crystallization on the electrical properties of ultrathin dielectrics grown by atomic layer deposition
H Kim, PC McIntyre, KC Saraswat
Applied physics letters 82 (1), 106-108, 2003
2542003
Thermal nitridation of Si and SiO2for VLSI
MM Moslehi, KC Saraswat
IEEE Transactions on Electron Devices 32 (2), 106-123, 1985
251*1985
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