| A 0.8 THz SiGe HBT Operating at 4.3 K PS Chakraborty, AS Cardoso, BR Wier, AP Omprakash, JD Cressler, ... IEEE Electron Device Letters 35 (2), 151-153, 2014 | 88 | 2014 |
| Large-signal reliability analysis of SiGe HBT cascode driver amplifiers MA Oakley, US Raghunathan, BR Wier, PS Chakraborty, JD Cressler IEEE Transactions on Electron Devices 62 (5), 1383-1389, 2015 | 38 | 2015 |
| Operation of SiGe HBTs down to 70 mK H Ying, BR Wier, J Dark, NE Lourenco, L Ge, AP Omprakash, M Mourigal, ... IEEE Electron Device Letters 38 (1), 12-15, 2016 | 36 | 2016 |
| Collector transport in SiGe HBTs operating at cryogenic temperatures H Ying, J Dark, AP Omprakash, BR Wier, L Ge, U Raghunathan, ... IEEE Transactions on Electron Devices 65 (9), 3697-3703, 2018 | 26 | 2018 |
| A physics-based circuit aging model for mixed-mode degradation in SiGe HBTs BR Wier, K Green, J Kim, DT Zweidinger, JD Cressler IEEE Transactions on Electron Devices 63 (8), 2987-2993, 2016 | 24 | 2016 |
| A comparison of field and current-driven hot-carrier reliability in NPN SiGe HBTs BR Wier, US Raghunathan, PS Chakraborty, H Yasuda, P Menz, ... IEEE Transactions on Electron Devices 62 (7), 2244-2250, 2015 | 24 | 2015 |
| Tunneling, current gain, and transconductance in silicon-germanium heterojunction bipolar transistors operating at millikelvin temperatures D Davidović, H Ying, J Dark, BR Wier, L Ge, NE Lourenco, AP Omprakash, ... Physical Review Applied 8 (2), 024015, 2017 | 23 | 2017 |
| Bias-and temperature-dependent accumulated stress modeling of mixed-mode damage in SiGe HBTs US Raghunathan, PS Chakraborty, TG Bantu, BR Wier, H Yasuda, ... IEEE Transactions on electron Devices 62 (7), 2084-2091, 2015 | 20 | 2015 |
| Hot-carrier-damage-induced current gain enhancement (CGE) effects in SiGe HBTs US Raghunathan, RP Martinez, BR Wier, AP Omprakash, H Ying, ... IEEE Transactions on Electron Devices 65 (6), 2430-2438, 2018 | 13 | 2018 |
| SiGe HBT profiles with enhanced inverse-mode operation and their impact on single-event transients ZE Fleetwood, A Ildefonso, GN Tzintzarov, B Wier, U Raghunathan, ... IEEE transactions on Nuclear Science 65 (1), 399-406, 2017 | 11 | 2017 |
| Physical differences in hot carrier degradation of oxide interfaces in complementary (np-n+ pnp) SiGe HBTs US Raghunathan, H Ying, BR Wier, AP Omprakash, PS Chakraborty, ... IEEE Transactions on Electron Devices 64 (1), 37-44, 2016 | 11 | 2016 |
| Revisiting safe operating area: SiGe HBT aging models for reliability-aware circuit design BR Wier, RP Martinez, US Raghunathan, H Ying, S Zeinolabedinzadeh, ... 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2018 | 8 | 2018 |
| TCAD modeling of accumulated damage during time-dependent mixed-mode stress US Raghunathan, PS Chakraborty, B Wier, JD Cressler, H Yasuda, ... 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 179-182, 2013 | 8 | 2013 |
| The role of negative feedback effects on single-event transients in SiGe HBT analog circuits J Seungwoo, I Song, ZE Fleetwood, U Raghunathan, NE Lourenco, ... IEEE Transactions on Nuclear Science 62 (6), 2599-2605, 2015 | 7 | 2015 |
| On the reliability of SiGe HBT cascode driver amplifiers MA Oakley, B Wier, US Raghunathan, PS Chakraborty, JD Cressler 2014 IEEE Radio Frequency Integrated Circuits Symposium, 445-448, 2014 | 6 | 2014 |
| IEEE Trans. Electron Devices BR Wier IEEE Trans. Electron Devices 62 (7), 2244, 2015 | 5 | 2015 |
| Influence of ethical position and information asymmetry on transfer price negotiations K Green, B Wier Accounting and Finance Research 4 (1), 1-30, 2015 | 5 | 2015 |
| Base current degradation mechanisms in NPN SiGe HBTs subjected to high current stress BR Wier, US Raghunathan, PS Chakraborty, JD Cressler, H Yasuda, ... Proc. 2013 IEEE International Solid-State Device Research Symposium, 1-2, 2013 | 5 | 2013 |
| Modeling of high-current damage in SiGe HBTs under pulsed stress US Raghunathan, B Wier, RP Martinez, ZE Fleetwood, A Omprakash, ... 2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 17-20, 2016 | 4 | 2016 |
| On the use of vertical superjunction collectors for enhanced breakdown performance in SiGe HBTs BR Wier, US Raghunathan, ZE Fleetwood, MA Oakley, AJ Joseph, V Jain, ... 2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 21-24, 2016 | 3 | 2016 |
