| Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at Vds = 0.3 V E Memisevic, J Svensson, M Hellenbrand, E Lind, LE Wernersson Electron Devices Meeting (IEDM), 2016 IEEE International, 19.1. 1-19.1. 4, 2016 | 129* | 2016 |
| Individual defects in InAs/InGaAsSb/GaSb nanowire tunnel field-effect transistors operating below 60 mV/decade E Memisevic, M Hellenbrand, E Lind, AR Persson, S Sant, A Schenk, ... Nano letters 17 (7), 4373-4380, 2017 | 101 | 2017 |
| InAs-Al hybrid devices passing the topological gap protocol M Aghaee, A Akkala, Z Alam, R Ali, AA Ramirez, M Andrzejczuk, ... Physical Review B 107 (24), 245423, 2023 | 97 | 2023 |
| High-frequency gate-all-around vertical InAs nanowire MOSFETs on Si substrates S Johansson, E Memisevic, LE Wernersson, E Lind IEEE Electron Device Letters 35 (5), 518-520, 2014 | 95 | 2014 |
| Scaling of vertical InAs–GaSb nanowire tunneling field-effect transistors on Si E Memišević, J Svensson, M Hellenbrand, E Lind, LE Wernersson IEEE electron device letters 37 (5), 549-552, 2016 | 72 | 2016 |
| Nanowire tunnel FET with simultaneously reduced subthermionic subthreshold swing and off-current due to negative capacitance and voltage pinning effects A Saeidi, T Rosca, E Memisevic, I Stolichnov, M Cavalieri, LE Wernersson, ... Nano letters 20 (5), 3255-3262, 2020 | 66 | 2020 |
| III-V heterostructure nanowire tunnel FETs E Lind, E Memišević, AW Dey, LE Wernersson IEEE Journal of the Electron Devices Society 3 (3), 96-102, 2015 | 66 | 2015 |
| InAs/InGaAsSb/GaSb nanowire tunnel field-effect transistors E Memisevic, J Svensson, E Lind, LE Wernersson IEEE Transactions on Electron Devices 64 (11), 4746-4751, 2017 | 62 | 2017 |
| Vertical nanowire TFETs with channel diameter down to 10 nm and point SMIN of 35 mV/decade E Memisevic, J Svensson, E Lind, LE Wernersson IEEE Electron Device Letters 39 (7), 1089-1091, 2018 | 47 | 2018 |
| Impact of band-tails on the subthreshold swing of III-V tunnel field-effect transistor E Memisevic, E Lind, M Hellenbrand, J Svensson, LE Wernersson IEEE Electron Device Letters 38 (12), 1661-1664, 2017 | 29 | 2017 |
| Thin electron beam defined hydrogen silsesquioxane spacers for vertical nanowire transistors E Memišević, E Lind, LE Wernersson Journal of Vacuum Science & Technology B 32 (5), 2014 | 24 | 2014 |
| Low-frequency noise in III–V nanowire TFETs and MOSFETs M Hellenbrand, E Memišević, M Berg, OP Kilpi, J Svensson, ... IEEE Electron Device Letters 38 (11), 1520-1523, 2017 | 23 | 2017 |
| Single‐Shot Fabrication of Semiconducting–Superconducting Nanowire Devices F Borsoi, GP Mazur, N van Loo, MP Nowak, L Bourdet, K Li, S Korneychuk, ... Advanced Functional Materials 31 (34), 2102388, 2021 | 16 | 2021 |
| Impact of source doping on the performance of vertical InAs/InGaAsSb/GaSb nanowire Tunnel Field-Effect Transistors E Memisevic, J Svensson, E Lind, LE Wernersson Nanotechnology 29 (43), 2018 | 14 | 2018 |
| Tuning of source material for InAs/InGaAsSb/GaSb application-specific vertical nanowire tunnel FETs A Krishnaraja, J Svensson, E Memisevic, Z Zhu, AR Persson, E Lind, ... ACS Applied Electronic Materials 2 (9), 2882-2887, 2020 | 13 | 2020 |
| An experimental study of heterostructure tunnel FET nanowire arrays: Digital and analog figures of merit from 300K to 10K T Rosca, A Saeidi, E Memisevic, LE Wernersson, AM Ionescu 2018 IEEE International Electron Devices Meeting (IEDM), 13.5. 1-13.5. 4, 2018 | 12 | 2018 |
| Capacitance Measurements in Vertical III-V Nanowire TFETs M Hellenbrand, E Memisevic, J Svensson, A Krishnaraja, E Lind, ... IEEE Electron Device Letters, 2018 | 8 | 2018 |
| The impact of hetero-junction and oxide-interface traps on the performance of InAs/Si and InAs/GaAsSb nanowire tunnel FETs A Schenk, S Sant, K Moselund, H Riel, E Memisevic, LE Wernersson 2017 International Conference on Simulation of Semiconductor Processes and …, 2017 | 8 | 2017 |
| Vertical III-V Nanowire Tunnel Field-Effect Transistor E Memisevic The Department of Electrical and Information Technology, 2017 | 7 | 2017 |
| 2016 International Electron Devices Meeting (IEDM) E Memisevic, J Svensson, M Hellenbrand, E Lind, L Wernersson IEEE, 2016 | 6 | 2016 |
Wernersson Lars-ErikLund UniversityEmail verificata su eit.lth.se
