In situ atomic-scale imaging of electrochemical lithiation in siliconXH Liu, JW Wang, S Huang, F Fan, X Huang, Y Liu, S Krylyuk, J Yoo, ...
Nature nanotechnology 7 (11), 749-756, 2012
651 2012 Electric-field induced structural transition in vertical MoTe2 - and Mo1–x Wx 2 -based resistive memories F Zhang, H Zhang, S Krylyuk, CA Milligan, Y Zhu, DY Zemlyanov, ...
Nature materials 18 (1), 55-61, 2019
360 2019 The 2019 materials by design roadmap K Alberi, MB Nardelli, A Zakutayev, L Mitas, S Curtarolo, A Jain, M Fornari, ...
Journal of Physics D: Applied Physics 52 (1), 013001, 2018
316 2018 Vertical 2D/3D semiconductor heterostructures based on epitaxial molybdenum disulfide and gallium nitride D Ruzmetov, K Zhang, G Stan, B Kalanyan, GR Bhimanapati, SM Eichfeld, ...
Acs Nano 10 (3), 3580-3588, 2016
248 2016 On-the-fly closed-loop materials discovery via Bayesian active learning AG Kusne, H Yu, C Wu, H Zhang, J Hattrick-Simpers, B DeCost, S Sarker, ...
Nature communications 11 (1), 5966, 2020
247 2020 The joint automated repository for various integrated simulations (JARVIS) for data-driven materials design K Choudhary, KF Garrity, ACE Reid, B DeCost, AJ Biacchi, ...
npj computational materials 6 (1), 173, 2020
239 2020 Spontaneously grown GaN and AlGaN nanowires KA Bertness, A Roshko, NA Sanford, JM Barker, AV Davydov
Journal of Crystal Growth 287 (2), 522-527, 2006
199 2006 Sub-bandgap defect states in polycrystalline hafnium oxide and their suppression by admixture of silicon NV Nguyen, AV Davydov, D Chandler-Horowitz, MM Frank
Applied Physics Letters 87 (19), 2005
186 2005 Characterization of Few-Layer 1T′ MoTe2 by Polarization-Resolved Second Harmonic Generation and Raman Scattering R Beams, LG Cançado, S Krylyuk, I Kalish, B Kalanyan, AK Singh, ...
ACS nano 10 (10), 9626-9636, 2016
170 2016 GaN nanowires grown by molecular beam epitaxy KA Bertness, NA Sanford, AV Davydov
IEEE Journal of selected topics in quantum electronics 17 (4), 847-858, 2010
155 2010 Electrolyte stability determines scaling limits for solid-state 3D Li ion batteries D Ruzmetov, VP Oleshko, PM Haney, HJ Lezec, K Karki, KH Baloch, ...
Nano letters 12 (1), 505-511, 2012
152 2012 Photocurrent detection of the orbital angular momentum of light Z Ji, W Liu, S Krylyuk, X Fan, Z Zhang, A Pan, L Feng, A Davydov, ...
Science 368 (6492), 763-767, 2020
151 2020 Catalyst-free growth of GaN nanowires KA Bertness, NA Sanford, JM Barker, JB Schlager, A Roshko, ...
Journal of electronic materials 35, 576-580, 2006
149 2006 MPInterfaces: A Materials Project based Python tool for high-throughput computational screening of interfacial systems K Mathew, AK Singh, JJ Gabriel, K Choudhary, SB Sinnott, AV Davydov, ...
Computational Materials Science 122, 183-190, 2016
133 2016 Immobilization of streptavidin on 4H–SiC for biosensor development EH Williams, AV Davydov, A Motayed, SG Sundaresan, P Bocchini, ...
Applied surface science 258 (16), 6056-6063, 2012
133 2012 Diameter dependent transport properties of gallium nitride nanowire field effect transistors A Motayed, M Vaudin, AV Davydov, J Melngailis, M He, SN Mohammad
Applied physics letters 90 (4), 2007
124 2007 Refractive index study of NA Sanford, LH Robins, AV Davydov, A Shapiro, DV Tsvetkov, ...
Journal of applied physics 94 (5), 2980-2991, 2003
124 2003 Thermodynamics and phase stability in the Ga–N system J Unland, B Onderka, A Davydov, R Schmid-Fetzer
Journal of Crystal Growth 256 (1-2), 33-51, 2003
123 2003 Ultrahigh thermal isolation across heterogeneously layered two-dimensional materials S Vaziri, E Yalon, M Muñoz Rojo, SV Suryavanshi, H Zhang, ...
Science advances 5 (8), eaax1325, 2019
121 2019 Tapering Control of Si Nanowires Grown from SiCl4 at Reduced Pressure S Krylyuk, AV Davydov, I Levin
ACS nano 5 (1), 656-664, 2011
118 2011 