David Tremouilles
David Tremouilles
CNRS research Fellow, LAAS University of Toulouse
Email verificata su laas.fr
Citata da
Citata da
Design methodology for MuGFET ESD protection devices
S Thijs, D Linten, DE Trémouilles
US Patent 7,923,266, 2011
Insight into boron-doped diamond Raman spectra characteristic features
V Mortet, ZV Živcová, A Taylor, O Frank, P Hubík, D Trémouilles, F Jomard, ...
Carbon 115, 279-284, 2017
Calibrated wafer-level HBM measurements for quasi-static and transient device analysis
M Scholz, S Thijs, D Linten, D Trémouilles, M Sawada, T Nakaei, ...
EOS/ESD, 89-94, 2007
Analysis and compact modeling of a vertical grounded-base npn bipolar transistor used as ESD protection in a smart power technology
G Bertrand, C Delage, M Bafleur, N Nolhier, JM Dorkel, Q Nguyen, ...
IEEE Journal of Solid-State Circuits 36 (9), 1373-1381, 2001
4A. 1 T-Diodes-A Novel Plug-and-Play Wideband RF Circuit ESD Protection Methodology
D Linten, M Dehan, M Scholz, S Thijs, G Groesenken, J Borromans, ...
Transient voltage overshoot in TLP testing—Real or artifact?
D Tremouilles, S Thijs, P Roussel, MI Natarajan, V Vassilev, ...
2005 Electrical Overstress/Electrostatic Discharge Symposium, 1-9, 2005
Size effect on properties of varistors made from zinc oxide nanoparticles through low temperature spark plasma sintering
LS Macary, ML Kahn, C Estournès, P Fau, D Trémouilles, M Bafleur, ...
Advanced Functional Materials 19 (11), 1775-1783, 2009
Building-up of system level ESD modeling: Impact of a decoupling capacitance on ESD propagation
N Monnereau, F Caignet, D Tremouilles, N Nolhier, M Bafleur
Microelectronics Reliability 53 (2), 221-228, 2013
Understanding the optimization of sub-45nm FinFET devices for ESD applications
D Tremouilles, S Thijs, C Russ, J Schneider, C Duvvury, N Collaert, ...
2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD …, 2007
Next generation bulk FinFET devices and their benefits for ESD robustness
A Griffoni, S Thijs, C Russ, D Trémouilles, D Linten, M Scholz, N Collaert, ...
2009 31st EOS/ESD Symposium, 1-10, 2009
Investigation of modeling system ESD failure and probability using IBIS ESD models
N Monnereau, F Caignet, N Nolhier, M Bafleur, D Tremouilles
IEEE Transactions on Device and Materials Reliability 12 (4), 599-606, 2012
Behavioral-modeling methodology to predict Electrostatic-Discharge susceptibility failures at system level: An IBIS improvement
N Monnereau, F Caignet, N Nolhier, D Trémouilles, M Bafleur
10th International Symposium on Electromagnetic Compatibility, 457-463, 2011
Analysis of heavily boron-doped diamond Raman spectrum
V Mortet, A Taylor, ZV Živcová, D Machon, O Frank, P Hubík, ...
Diamond and Related Materials 88, 163-166, 2018
Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation
F Boige, F Richardeau, D Trémouilles, S Lefebvre, G Guibaud
Microelectronics Reliability 76, 500-506, 2017
Design methodology of FinFET devices that meet IC-Level HBM ESD targets
S Thijs, C Russ, D Tremouilles, A Griffoni, D Linten, M Scholz, N Collaert, ...
EOS/ESD 2008-2008 30th Electrical Overstress/Electrostatic Discharge …, 2008
Electronic circuit and method of manufacturing an electronic circuit
C Russ, D Trémouilles, S Thijs
US Patent 7,687,859, 2010
Turn-off characteristics of the CMOS snapback ESD protection devices-new insights and its implications
VA Vashchenko, M Scholz, P Jansen, R Petersen, MI Natarajan, ...
2006 Electrical Overstress/Electrostatic Discharge Symposium, 39-45, 2006
Backside localization of current leakage faults using thermal laser stimulation
R Desplats, F Beaudoin, P Perdu, P Poirier, D Trémouilles, M Bafleur, ...
Microelectronics Reliability 41 (9-10), 1539-1544, 2001
Accelerated lifetime test of RF-MEMS switches under ESD stress
J Ruan, N Nolhier, GJ Papaioannou, D Trémouilles, V Puyal, ...
Microelectronics Reliability 49 (9-11), 1256-1259, 2009
RFCMOS ESD protection and reliability
MI Natarajan, S Thijs, P Jansen, D Tremouilles, W Jeamsaksiri, ...
Proceedings of the 12th International Symposium on the Physical and Failure …, 2005
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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