Per-┼ke Nilsson
Per-┼ke Nilsson
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A transcriptional roadmap to wood formation
M Hertzberg, H Aspeborg, J Schrader, A Andersson, R Erlandsson, ...
Proceedings of the National Academy of Sciences 98 (25), 14732-14737, 2001
Crystal defects as source of anomalous forward voltage increase of 4H-SiC diodes
JP Bergman, H Lendenmann, P┼ Nilsson, U Lindefelt, P Skytt
Materials Science Forum 353, 299-302, 2001
Weak links and dc SQUIDS on artificial nonsymmetric grain boundaries in YBa2Cu3O7−δ
ZG Ivanov, P┼ Nilsson, D Winkler, JA Alarco, T Claeson, EA Stepantsov, ...
Applied physics letters 59 (23), 3030-3032, 1991
Electromagnetic properties at the grain boundary interface of a YBa 2 Cu 3 O 7− δ bicrystal Josephson junction
D Winkler, YM Zhang, P┼ Nilsson, EA Stepantsov, T Claeson
Physical review letters 72 (8), 1260, 1994
Long term operation of 4.5 kV PiN and 2.5 kV JBS diodes
H Lendenmann, F Dahlquist, N Johansson, R Soderholm, PA Nilsson, ...
Materials Science Forum 353, 727-730, 2001
Reduction of 1/f noise in high‐T dc superconducting quantum interference devices cooled in an ambient magnetic field
E Dantsker, S Tanaka, P┼ Nilsson, R Kleiner, J Clarke
Applied physics letters 69, 4099, 1996
On the large-signal modelling of AlGaN/GaN HEMTs and SiC MESFETs
I Angelov, V Desmaris, K Dynefors, PA Nilsson, N Rorsman, H Zirath
European Gallium Arsenide and Other Semiconductor Application Symposiumá…, 2005
The European spallation source design
R Garoby, A Vergara, H Danared, I Alonso, E Bargallo, B Cheymol, ...
Physica Scripta 93 (1), 014001, 2017
Ultralow-power cryogenic InP HEMT with minimum noise temperature of 1 K at 6 GHz
J Schleeh, G Alestig, J Halonen, A Malmros, B Nilsson, PA Nilsson, ...
IEEE Electron Device Letters 33 (5), 664-666, 2012
Fabrication and characterization of field-plated buried-gate SiC MESFETs
K Andersson, M Sudow, PA Nilsson, E Sveinbjornsson, H Hjelmgren, ...
IEEE electron device letters 27 (7), 573-575, 2006
Microstructure of an artificial grain boundary weak link in an YBa2Cu3O7− σ thin film grown on a (100)(110),[001]-tilt Y-ZrO2 bicrystal
JA Alarco, E Olsson, ZG Ivanov, P┼ Nilsson, D Winkler, EA Stepantsov, ...
Ultramicroscopy 51 (1-4), 239-246, 1993
An AlGaN/GaN HEMT-based microstrip MMIC process for advanced transceiver design
M Sudow, M Fagerlind, M Thorsell, K Andersson, N Billstrom, P┼ Nilsson, ...
IEEE Transactions on Microwave Theory and Techniques 56 (8), 1827-1833, 2008
High field-effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material
G Gudjonsson, HO Olafsson, F Allerstam, PA Nilsson, EO Sveinbjornsson, ...
IEEE electron device letters 26 (2), 96-98, 2005
Phonon black-body radiation limit for heat dissipation in electronics
J Schleeh, J Mateos, I ═˝iguez-de-la-Torre, N Wadefalk, PA Nilsson, ...
Nature materials 14 (2), 187-192, 2015
Method for producing a pn-junction for a semiconductor device of SiC
PÅ Nilsson
US Patent 6,083,814, 2000
Flux‐flow transistors based on long YBa2Cu3O7−δ bicrystal grain boundary junctions
YM Zhang, D Winkler, P┼ Nilsson, T Claeson
Applied physics letters 64 (9), 1153-1155, 1994
Thermal study of the high-frequency noise in GaN HEMTs
M Thorsell, K Andersson, M Fagerlind, M Sudow, PA Nilsson, N Rorsman
IEEE Transactions on Microwave Theory and Techniques 57 (1), 19-26, 2008
High field effect mobility in Si face 4H-SiC MOSFET transistors
HO Olafsson, G Gudjonsson, PA Nilsson, EO Sveinbjornsson, H Zirath, ...
Electronics Letters 40 (8), 508-510, 2004
Josephson flux-flow resonances in overdamped long YBa 2 Cu 3 O 7 grain-boundary junctions
YM Zhang, D Winkler, P┼ Nilsson, T Claeson
Physical Review B 51 (13), 8684, 1995
Terahertz detection in zero-bias InAs self-switching diodes at room temperature
A Westlund, P SangarÚ, G Ducournau, P┼ Nilsson, C Gaquiere, ...
Applied Physics Letters 103 (13), 133504, 2013
Il sistema al momento non pu˛ eseguire l'operazione. Riprova pi¨ tardi.
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