| Low-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on paper S Conti, L Pimpolari, G Calabrese, R Worsley, S Majee, DK Polyushkin, ... Nature communications 11 (1), 3566, 2020 | 137 | 2020 |
| Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil G Calabrese, P Corfdir, G Gao, C Pfüller, A Trampert, O Brandt, ... Applied Physics Letters 108 (20), 2016 | 92 | 2016 |
| Molecular beam epitaxy of GaN nanowires on epitaxial graphene S Fernández-Garrido, M Ramsteiner, G Gao, LA Galves, B Sharma, ... Nano letters 17 (9), 5213-5221, 2017 | 79 | 2017 |
| Building integrated low concentration solar system for a self-sustainable Mediterranean villa: The Astonyshine house F Aldegheri, S Baricordi, P Bernardoni, M Brocato, G Calabrese, V Guidi, ... Energy and buildings 77, 355-363, 2014 | 35 | 2014 |
| Self-assembled formation of long, thin, and uncoalesced GaN nanowires on crystalline TiN films D Van Treeck, G Calabrese, JJW Goertz, VM Kaganer, O Brandt, ... Nano Research 11, 565-576, 2018 | 31 | 2018 |
| Effect of surface roughness, chemical composition, and native oxide crystallinity on the orientation of self-assembled GaN nanowires on Ti foils G Calabrese, SV Pettersen, C Pfüller, M Ramsteiner, JK Grepstad, ... Nanotechnology 28 (42), 425602, 2017 | 21 | 2017 |
| Inkjet-printed graphene Hall mobility measurements and low-frequency noise characterization G Calabrese, L Pimpolari, S Conti, F Mavier, S Majee, R Worsley, Z Wang, ... Nanoscale 12, 6708-6716, 2020 | 19 | 2020 |
| X-Ray-Induced Modification of the Photophysical Properties of MAPbBr3 Single Crystals G Armaroli, L Ferlauto, F Lédée, M Lini, A Ciavatti, A Kovtun, F Borgatti, ... ACS Applied Materials & Interfaces 13 (49), 58301-58308, 2021 | 18 | 2021 |
| Numerical simulation of the temperature distortions in InGaP/GaAs/Ge solar cells working under high concentrating conditions due to voids presence in the solder joint G Calabrese, F Gualdi, S Baricordi, P Bernardoni, V Guidi, L Pozzetti, ... Solar energy 103, 1-11, 2014 | 18 | 2014 |
| Polarity-induced selective area epitaxy of GaN nanowires Z de Souza Schiaber, G Calabrese, X Kong, A Trampert, B Jenichen, ... Nano Letters 17 (1), 63-70, 2017 | 17 | 2017 |
| Printed transistors made of 2D material-based inks S Conti, G Calabrese, K Parvez, L Pimpolari, F Pieri, G Iannaccone, ... Nature Reviews Materials 8 (10), 651-667, 2023 | 14 | 2023 |
| Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3 G Calabrese, G Gao, D Van Treeck, P Corfdir, C Sinito, T Auzelle, ... Nanotechnology 30 (11), 114001, 2019 | 13 | 2019 |
| Comprehensive analysis of the self-assembled formation of GaN nanowires on amorphous AlxOy: in situ quadrupole mass spectrometry studies M Sobanska, ZR Zytkiewicz, G Calabrese, L Geelhaar, ... Nanotechnology 30 (15), 154002, 2019 | 12 | 2019 |
| Monitoring the formation of GaN nanowires in molecular beam epitaxy by polarization-resolved optical reflectometry P Corfdir, G Calabrese, A Laha, T Auzelle, L Geelhaar, O Brandt, ... CrystEngComm 20 (23), 3202-3206, 2018 | 12 | 2018 |
| Ge growth on porous silicon: The effect of buffer porosity on the epilayer crystalline quality G Calabrese, S Baricordi, P Bernardoni, D De Salvador, M Ferroni, ... Applied Physics Letters 105 (12), 2014 | 12 | 2014 |
| A joint thermal–electrical analysis of void formation effects on concentrator silicon solar cells solder layer S Baricordi, G Calabrese, F Gualdi, V Guidi, M Pasquini, L Pozzetti, ... Solar energy materials and solar cells 111, 133-140, 2013 | 12 | 2013 |
| Radius-Dependent Homogeneous Strain in Uncoalesced GaN Nanowires G Calabrese, D van Treeck, VM Kaganer, O Konovalov, P Corfdir, C Sinito, ... Acta Materialia 195, 87-97, 2020 | 10 | 2020 |
| About the definition of ‘Multiplier’of an integrating sphere A Parretta, G Calabrese Int. J. Opt. Appl. 3 (6), 119-124, 2013 | 9 | 2013 |
| Proton sponge lead halides containing 1D polyoctahedral chains C Pipitone, F Giannici, A Martorana, F Bertolotti, G Calabrese, S Milita, ... CrystEngComm 23 (5), 1126-1139, 2021 | 8 | 2021 |
| Tuning the orientation of the top-facets of GaN nanowires in molecular beam epitaxy by thermal decomposition T Auzelle, G Calabrese, S Fernández-Garrido Physical Review Materials 3 (1), 013402, 2019 | 8 | 2019 |
