Jeffrey T. Glass
Citata da
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Raman scattering characterization of carbon bonding in diamond and diamondlike thin films
RJ Nemanich, JT Glass, G Lucovsky, RE Shroder
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 6 (3…, 1988
Analysis of the composite structures in diamond thin films by Raman spectroscopy
RE Shroder, RJ Nemanich, JT Glass
Physical Review B 41 (6), 3738, 1990
Characterization of bias-enhanced nucleation of diamond on silicon by invacuo surface analysis and transmission electron microscopy
BR Stoner, GHM Ma, SD Wolter, JT Glass
Rev. B 45 (11067), 11, 1992
Textured diamond growth on (100) β‐SiC via microwave plasma chemical vapor deposition
BR Stoner, JT Glass
Applied physics letters 60 (6), 698-700, 1992
Polyethylenimine-Enhanced Electrocatalytic Reduction of CO2 to Formate at Nitrogen-Doped Carbon Nanomaterials
S Zhang, P Kang, S Ubnoske, MK Brennaman, N Song, RL House, ...
Journal of the American Chemical Society 136 (22), 7845-7848, 2014
Texture growth of diamond on silicon via in situ carburization and bias-enhanced nucleation
SD Wolter, BR Stoner, JT Glass, PJ Ellis, DS Buhaenko, CE Jenkins, ...
Appl. Phys. Lett 62, 1215, 1993
Textured growth of diamond on silicon via in situ carburization and bias‐enhanced nucleation
SD Wolter, BR Stoner, JT Glass, PJ Ellis, DS Buhaenko, CE Jenkins, ...
Applied physics letters 62 (11), 1215-1217, 1993
Characterization of diamond thin films: Diamond phase identification, surface morphology, and defect structures
BE Williams, JT Glass
Journal of Materials Research 4 (2), 373-384, 1989
Chemical vapor deposition and characterization of 6H‐SiC thin films on off‐axis 6H‐SiC substrates
HS Kong, JT Glass, RF Davis
Journal of applied physics 64 (5), 2672-2679, 1988
Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide
RF Davis, Z Sitar, BE Williams, HS Kong, HJ Kim, JW Palmour, ...
Materials Science and Engineering: B 1 (1), 77-104, 1988
Homoepitaxial growth of alpha-SiC thin films and semiconductor devices fabricated thereon
HS Kong, JT Glass, RF Davis
US Patent 4,912,064, 1990
Growth and characterization of diamond films on nondiamond substrates for electronic applications
W Zhu, BR Stoner, BE Williams, JT Glass
Proceedings of the IEEE 79 (5), 621-646, 1991
Material and electrical characterization of polycrystalline boron‐doped diamond films grown by microwave plasma chemical vapor deposition
K Nishimura, K Das, JT Glass
Journal of applied physics 69 (5), 3142-3148, 1991
Correlation of the electrical properties of metal contacts on diamond films with the chemical nature of the metal-diamond interface. II. Titanium contacts: A carbide-forming metal
T Tachibana, BE Williams, JT Glass
Physical Review B 45 (20), 11975, 1992
The origin of the broadband luminescence and the effect of nitrogen doping on the optical properties of diamond films
L Bergman, MT McClure, JT Glass, RJ Nemanich
Journal of applied physics 76 (5), 3020-3027, 1994
Diamond, silicon carbide and related wide bandgap semiconductors
JT Glass, R Messier, N Fujimori
Pittsburgh, PA (USA); Materials Research Society, 1990
Epitaxial nucleation of diamond on β-SiC via bias-enhanced microwave plasma chemical vapor deposition
BR Stoner, GH Ma, SD Wolter, W Zhu, YC Wang, RF Davis, JT Glass
Diamond and related materials 2 (2-4), 142-146, 1993
Electron emission from diamond coated silicon field emitters
J Liu, VV Zhirnov, GJ Wojak, AF Myers, WB Choi, JJ Hren, SD Wolter, ...
Applied physics letters 65 (22), 2842-2844, 1994
An examination of double positioning boundaries and interface misfit in beta‐SiC films on alpha‐SiC substrates
HS Kong, BL Jiang, JT Glass, GA Rozgonyi, KL More
Journal of applied physics 63 (8), 2645-2650, 1988
Oriented diamond films grown on nickel substrates
W Zhu, PC Yang, JT Glass
Applied physics letters 63 (12), 1640-1642, 1993
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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