Spin-orbit torque-induced switching in ferrimagnetic alloys: Experiments and modeling SG Je, JC Rojas-Sánchez, TH Pham, P Vallobra, G Malinowski, D Lacour, ...
Applied Physics Letters 112 (6), 2018
88 2018 Determination of spin Hall angle, spin mixing conductance, and spin diffusion length in CoFeB/Ir for spin-orbitronic devices T Fache, JC Rojas-Sanchez, L Badie, S Mangin, S Petit-Watelot
Physical Review B 102 (6), 064425, 2020
44 2020 Magnetic field and temperature control over Pt/Co/Ir/Co/Pt multistate magnetic logic device R Morgunov, A Hamadeh, T Fache, G Lvova, O Koplak, A Talantsev, ...
Superlattices and Microstructures 104, 509-517, 2017
31 2017 Manipulating exchange bias using all-optical helicity-dependent switching P Vallobra, T Fache, Y Xu, L Zhang, G Malinowski, M Hehn, ...
Physical review B 96 (14), 144403, 2017
27 2017 Nonmonotonic aftereffect measurements in perpendicular synthetic ferrimagnets T Fache, HS Tarazona, J Liu, G L’vova, MJ Applegate, JC Rojas-Sanchez, ...
Physical Review B 98 (6), 064410, 2018
23 2018 Strain-Enhanced Charge-to-Spin Conversion in E Liu, T Fache, D Cespedes-Berrocal, Z Zhang, S Petit-Watelot, S Mangin, ...
Physical Review Applied 12 (4), 044074, 2019
22 2019 Relaxation dynamics of magnetization transitions in synthetic antiferromagnet with perpendicular anisotropy A Talantsev, Y Lu, T Fache, M Lavanant, A Hamadeh, A Aristov, O Koplak, ...
Journal of Physics: Condensed Matter 30 (13), 135804, 2018
22 2018 Influence of the magnetic field sweeping rate on magnetic transitions in synthetic ferrimagnets with perpendicular anisotropy RB Morgunov, EI Kunitsyna, AD Talantsev, OV Koplak, T Fache, Y Lu, ...
Applied Physics Letters 114 (22), 2019
15 2019 Magnetic aftereffects in CoFeB/Ta/CoFeB spin valves of large area R Morgunov, Y Lu, M Lavanant, T Fache, X Deveaux, S Migot, O Koplak, ...
Physical Review B 96 (5), 054421, 2017
11 2017 Effect of Co layer thickness on magnetic relaxation in Pt/Co/Ir/Co/Pt/GaAs spin valve RB Morgunov, GL L'vova, AD Talantsev, OV Koplak, T Fache, S Mangin
Journal of Magnetism and Magnetic Materials 459, 33-36, 2018
9 2018 High performance silicon-based substrate using buried PN junctions towards RF applications M Moulin, M Rack, T Fache, Z Chalupa, C Plantier, Y Morand, J Lacord, ...
2021 Joint International EUROSOI Workshop and International Conference on …, 2021
5 2021 High-resistivity silicon-based substrate using buried PN junctions towards RFSOI applications M Moulin, M Rack, T Fache, Z Chalupa, C Plantier, Y Morand, J Lacord, ...
Solid-State Electronics 194, 108301, 2022
2 2022 Nox and Buried PN junctions effect on RF performance of High-Resistivity Silicon substrates M Moulin, M Rack, T Fache, M Nabet, Z Chalupa, C Plantier, F Allibert, ...
2022 IEEE 22nd Topical Meeting on Silicon Monolithic Integrated Circuits in …, 2022
2 2022 Dzyaloshinskii–Moriya interaction determined from spin wave nonreciprocity and magnetic bubble asymmetry in Pt/Co/Ir/Co/Pt synthetic ferrimagnets O Koplak, A Bezverkhnii, A Sadovnikov, R Morgunov, M Hehn, JL Bello, ...
Journal of Physics: Condensed Matter 34 (8), 085803, 2021
2 2021 Dzyaloshinskii-Moriya interaction probed by magnetization reversal in bilayer Pt/Co/Ir/Co/Pt synthetic ferrimagnets RB Morgunov, AI Bezverkhnii, M Hehn, JL Bello, T Fache, S Mangin
Physical Review B 104 (13), 134424, 2021
2 2021 Field Effect Depletion Regions exploiting different Qox polarities for Interface Passivation in High-Resistivity Silicon Substrates M Moulin, T Fache, M Rack, C Plantier, J Lugo, L Hutin, JP Raskin
2023 International VLSI Symposium on Technology, Systems and Applications …, 2023
1 2023 Iridium-based synthetic ferrimagnets for spintronics T Fache
Université de Lorraine, 2020
1 2020 Rf substrate comprising depletion regions induced by field effect L Hutin, M Moulin, T Fache, C Plantier, JP Raskin, M Rack
US Patent App. 18/337,269, 2023
2023 A cost effective RF-SOI Drain Extended MOS transistor featuring PSAT =19dBm @28GHz & VDD =3V for 5G Power Amplifier application X Garros, A Divay, J Lacord, A Serhan, T Fache, J Antonijevic, S Crémer, ...
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
2023 Computational model for predicting structural stability and stress transfer of a new SiGe stressor technique for NMOS devices T Bordignon, B Duriez, N Guitard, R Duru, C Pribat, J Richy, S Reboh, ...
Solid-State Electronics 210, 108787, 2023
2023 