| The Large Enriched Germanium Experiment for Neutrinoless Double Beta Decay (LEGEND) N Abgrall, A Abramov, N Abrosimov, I Abt, M Agostini, M Agartioglu, ... AIP Conference Proceedings, 2017 | 335 | 2017 |
| Crystallization of 640 kg mc-silicon ingots under traveling magnetic field by using a heater-magnet module C Kudla, AT Blumenau, F Büllesfeld, N Dropka, C Frank-Rotsch, ... Journal of Crystal Growth 365, 54-58, 2013 | 59 | 2013 |
| Characterization of mc-Si directionally solidified in travelling magnetic fields FM Kiessling, F Büllesfeld, N Dropka, C Frank-Rotsch, M Müller, ... Journal of Crystal Growth 360, 81-86, 2012 | 49 | 2012 |
| Different nucleation approaches for production of high-performance multi-crystalline silicon ingots and solar cells I Buchovska, O Liaskovskiy, T Vlasenko, S Beringov, FM Kiessling Solar Energy Materials and Solar Cells 159, 128-135, 2017 | 45 | 2017 |
| Study of Hg vacancies in (Hg, Cd) Te after THM growth and post-growth annealing by positron annihilation R Krause, A Klimakow, FM Kiessling, A Polity, P Gille, M Schenk Journal of crystal growth 101 (1-4), 512-516, 1990 | 40 | 1990 |
| The horizontal bridgman method P Rudolph, FM Kiessling Crystal research and technology 23 (10‐11), 1207-1224, 1988 | 38 | 1988 |
| A new approach to crystal growth of Hg1− xCdxTe by the travelling heater method (THM) P Gille, FM Kiessling, M Burkert Journal of crystal growth 114 (1-2), 77-86, 1991 | 35 | 1991 |
| Microscopic origins of catastrophic optical damage in diode lasers M Hempel, JW Tomm, F La Mattina, I Ratschinski, M Schade, I Shorubalko, ... IEEE Journal of Selected Topics in Quantum Electronics 19 (4), 1500508-1500508, 2012 | 34 | 2012 |
| Numerical simulation of Czochralski crystal growth under the influence of a traveling magnetic field generated by an internal heater-magnet module (HMM) O Klein, C Lechner, PÉ Druet, P Philip, J Sprekels, C Frank-Rotsch, ... Journal of crystal growth 310 (7-9), 1523-1532, 2008 | 33 | 2008 |
| Dependence of phosphorus gettering and hydrogen passivation efficacy on grain boundary type in multicrystalline silicon P Karzel, M Ackermann, L Gröner, C Reimann, M Zschorsch, S Meyer, ... Journal of Applied Physics 114 (24), 2013 | 29 | 2013 |
| Growth and characterization of GaAs crystals produced by the VCz method without boric oxide encapsulation P Rudolph, FM Kiessling Journal of crystal growth 292 (2), 532-537, 2006 | 28 | 2006 |
| Structural perfection of Hg1− xCdxTe Grown by THM C Genzel, P Gille, I Hähnert, FM Kiessling, P Rudolph Journal of crystal growth 101 (1-4), 232-236, 1990 | 26 | 1990 |
| Positron trapping at native vacancies in CdTe crystals: In doping effect C Corbel, L Baroux, FM Kiessling, C Gely-Sykes, R Triboulet Materials Science and Engineering: B 16 (1-3), 134-138, 1993 | 25 | 1993 |
| Technology development of high purity germanium crystals for radiation detectors N Abrosimov, M Czupalla, N Dropka, J Fischer, A Gybin, K Irmscher, ... Journal of Crystal Growth 532, 125396, 2020 | 23 | 2020 |
| Scaling of dislocation cells in GaAs crystals by global numeric simulation and their restraint by in situ control of stoichiometry P Rudolph, C Frank-Rotsch, U Juda, FM Kiessling Materials Science and Engineering: A 400, 170-174, 2005 | 21 | 2005 |
| Growth of GaAs crystals from Ga-rich melts by the VCz method without liquid encapsulation FM Kiessling, P Rudolph, M Neubert, U Juda, M Naumann, W Ulrici Journal of crystal growth 269 (2-4), 218-228, 2004 | 21 | 2004 |
| Influence of crucible and coating on the contamination of directionally solidified silicon: First results of the German research network ‘SolarWins W Kwapil, A Zuschlag, I Reis, I Schwirtlich, S Meyer, R Zierer, R Krain, ... Proc. of the 27th European Photovoltaic Solar Energy Conference, Frankfurt …, 2012 | 17 | 2012 |
| The nitrogen–hydrogen–vacancy complex in GaAs W Ulrici, FM Kiessling, P Rudolph physica status solidi (b) 241 (6), 1281-1285, 2004 | 17 | 2004 |
| Semiconductor crystal growth under the influence of magnetic fields C Frank‐Rotsch, N Dropka, FM Kießling, P Rudolph Crystal Research and Technology 55 (2), 1900115, 2020 | 16 | 2020 |
| Dislocation patterning during crystal growth of semiconductor compounds (GaAs) C Frank-Rotsch, U Juda, FM Kiessling, P Rudolph Materials science and technology 21 (12), 1450-1454, 2005 | 15 | 2005 |
