Suhuai Wei
Citata da
Citata da
Intrinsic n-type versus p-type doping asymmetry and the defect physics of ZnO
SB Zhang, SH Wei, A Zunger
Physical Review B 63 (7), 075205, 2001
Special quasirandom structures
A Zunger, SH Wei, LG Ferreira, JE Bernard
Physical Review Letters 65 (3), 353, 1990
Defect physics of the CuInSe 2 chalcopyrite semiconductor
SB Zhang, SH Wei, A Zunger, H Katayama-Yoshida
Physical Review B 57 (16), 9642, 1998
Origin of p-type doping difficulty in ZnO: The impurity perspective
CH Park, SB Zhang, SH Wei
Physical Review B 66 (7), 073202, 2002
Classification of Lattice Defects in the Kesterite Cu2ZnSnS4 and Cu2ZnSnSe4 Earth‐Abundant Solar Cell Absorbers
S Chen, A Walsh, XG Gong, SH Wei
Advanced materials 25 (11), 1522-1539, 2013
Stabilizing perovskite structures by tuning tolerance factor: formation of formamidinium and cesium lead iodide solid-state alloys
Z Li, M Yang, JS Park, SH Wei, JJ Berry, K Zhu
Chemistry of Materials 28 (1), 284-292, 2016
Calculated natural band offsets of all II–VI and III–V semiconductors: Chemical trends and the role of cation d orbitals
SH Wei, A Zunger
Applied Physics Letters 72 (16), 2011-2013, 1998
Halide perovskite materials for solar cells: a theoretical review
WJ Yin, JH Yang, J Kang, Y Yan, SH Wei
Journal of Materials Chemistry A 3 (17), 8926-8942, 2015
Electronic properties of random alloys: Special quasirandom structures
SH Wei, LG Ferreira, JE Bernard, A Zunger
Physical Review B 42 (15), 9622, 1990
Design of narrow-gap TiO 2: a passivated codoping approach for enhanced photoelectrochemical activity
Y Gai, J Li, SS Li, JB Xia, SH Wei
Physical review letters 102 (3), 036402, 2009
Crystal and electronic band structure of ( and Se) photovoltaic absorbers: First-principles insights
S Chen, XG Gong, A Walsh, SH Wei
Applied Physics Letters 94 (4), 041903, 2009
Doping by large-size-mismatched impurities: the microscopic origin of arsenic-or antimony-doped p-type zinc oxide
S Limpijumnong, SB Zhang, SH Wei, CH Park
Physical review letters 92 (15), 155504, 2004
Intrinsic point defects and complexes in the quaternary kesterite semiconductor Cu 2 ZnSnS 4
S Chen, JH Yang, XG Gong, A Walsh, SH Wei
Physical Review B 81 (24), 245204, 2010
Role of metal d states in II-VI semiconductors
SH Wei, A Zunger
Physical Review B 37 (15), 8958, 1988
Nature of the Band Gap of Revealed by First-Principles Calculations and X-Ray Spectroscopy
A Walsh, JLF Da Silva, SH Wei, C Krber, A Klein, LFJ Piper, A DeMasi, ...
Physical review letters 100 (16), 167402, 2008
Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe
SH Wei, SB Zhang
Physical Review B 66 (15), 155211, 2002
Giant and composition-dependent optical bowing coefficient in GaAsN alloys
SH Wei, A Zunger
Physical review letters 76 (4), 664, 1996
Predicted band-gap pressure coefficients of all diamond and zinc-blende semiconductors: Chemical trends
SH Wei, A Zunger
Physical Review B 60 (8), 5404, 1999
Effects of Ga addition to on its electronic, structural, and defect properties
SH Wei, SB Zhang, A Zunger
Applied physics letters 72 (24), 3199-3201, 1998
Local-density-functional calculation of the pressure-induced metallization of BaSe and BaTe
SH Wei, H Krakauer
Physical Review Letters 55 (11), 1200, 1985
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