Filippo Giubileo
Filippo Giubileo
Researcher at CNR-SPIN Salerno
Email verificata su spin.cnr.it - Home page
Titolo
Citata da
Citata da
Anno
Two-Gap State Density in : A True Bulk Property Or A Proximity Effect?
F Giubileo, D Roditchev, W Sacks, R Lamy, DX Thanh, J Klein, S Miraglia, ...
Physical review letters 87 (17), 177008, 2001
4352001
Hysteresis in the transfer characteristics of MoS2 transistors
A Di Bartolomeo, L Genovese, F Giubileo, L Iemmo, G Luongo, T Foller, ...
2D Materials 5 (1), 015014, 2017
1592017
The role of contact resistance in graphene field-effect devices
F Giubileo, A Di Bartolomeo
Progress in Surface Science 92 (3), 143-175, 2017
1452017
Electrical transport and persistent photoconductivity in monolayer MoS2 phototransistors
A Di Bartolomeo, L Genovese, T Foller, F Giubileo, G Luongo, L Croin, ...
Nanotechnology 28 (21), 214002, 2017
1382017
Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors
A Di Bartolomeo, A Grillo, F Urban, L Iemmo, F Giubileo, G Luongo, ...
Advanced Functional Materials 28 (28), 1800657, 2018
1182018
Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device
A Di Bartolomeo, F Giubileo, G Luongo, L Iemmo, N Martucciello, G Niu, ...
2D Materials 4 (1), 015024, 2016
1152016
Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect
A Di Bartolomeo, G Luongo, F Giubileo, N Funicello, G Niu, T Schroeder, ...
2D Materials 4 (2), 025075, 2017
1062017
Multiwalled carbon nanotube films as small-sized temperature sensors
A Di Bartolomeo, M Sarno, F Giubileo, C Altavilla, L Iemmo, S Piano, ...
Journal of Applied Physics 105 (6), 064518, 2009
1042009
Field emission from single and few-layer graphene flakes
S Santandrea, F Giubileo, V Grossi, S Santucci, M Passacantando, ...
Applied Physics Letters 98 (16), 163109, 2011
1012011
A local field emission study of partially aligned carbon-nanotubes by atomic force microscope probe
A Di Bartolomeo, A Scarfato, F Giubileo, F Bobba, M Biasiucci, AM Cucolo, ...
Carbon 45 (15), 2957-2971, 2007
872007
Graphene field effect transistors with niobium contacts and asymmetric transfer characteristics
A Di Bartolomeo, F Giubileo, F Romeo, P Sabatino, G Carapella, L Iemmo, ...
Nanotechnology 26 (47), 475202, 2015
862015
Charge transfer and partial pinning at the contacts as the origin of a double dip in the transfer characteristics of graphene-based field-effect transistors
A Di Bartolomeo, F Giubileo, S Santandrea, F Romeo, R Citro, ...
Nanotechnology 22 (27), 275702, 2011
792011
A WSe 2 vertical field emission transistor
A Di Bartolomeo, F Urban, M Passacantando, N McEvoy, L Peters, ...
Nanoscale 11 (4), 1538-1548, 2019
782019
Field emission from carbon nanostructures
F Giubileo, A Di Bartolomeo, L Iemmo, G Luongo, F Urban
Applied Sciences 8 (4), 526, 2018
762018
Leakage and field emission in side-gate graphene field effect transistors
A Di Bartolomeo, F Giubileo, L Iemmo, F Romeo, S Russo, S Unal, ...
Applied Physics Letters 109 (2), 023510, 2016
702016
Electrical properties and memory effects of field-effect transistors from networks of single-and double-walled carbon nanotubes
A Di Bartolomeo, M Rinzan, AK Boyd, Y Yang, L Guadagno, F Giubileo, ...
Nanotechnology 21 (11), 115204, 2010
672010
Field emission from a selected multiwall carbon nanotube
M Passacantando, F Bussolotti, S Santucci, A Di Bartolomeo, F Giubileo, ...
Nanotechnology 19 (39), 395701, 2008
652008
Pressure‐tunable ambipolar conduction and hysteresis in thin palladium diselenide field effect transistors
A Di Bartolomeo, A Pelella, X Liu, F Miao, M Passacantando, F Giubileo, ...
Advanced Functional Materials 29 (29), 1902483, 2019
642019
Effect of back-gate on contact resistance and on channel conductance in graphene-based field-effect transistors
A Di Bartolomeo, S Santandrea, F Giubileo, F Romeo, M Petrosino, ...
Diamond and Related Materials 38, 19-23, 2013
642013
Transport and field emission properties of MoS2 bilayers
F Urban, M Passacantando, F Giubileo, L Iemmo, A Di Bartolomeo
Nanomaterials 8 (3), 151, 2018
622018
Il sistema al momento non pu˛ eseguire l'operazione. Riprova pi¨ tardi.
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