Two-Gap State Density in F Giubileo, D Roditchev, W Sacks, R Lamy, DX Thanh, J Klein, S Miraglia, ...
Physical review letters 87 (17), 177008, 2001
451 2001 The role of contact resistance in graphene field-effect devices F Giubileo, A Di Bartolomeo
Progress in Surface Science 92 (3), 143-175, 2017
107 2017 Hysteresis in the transfer characteristics of MoS2 transistors A Di Bartolomeo, L Genovese, F Giubileo, L Iemmo, G Luongo, T Foller, ...
2D Materials 5 (1), 015014, 2017
106 2017 Electrical transport and persistent photoconductivity in monolayer MoS2 phototransistors A Di Bartolomeo, L Genovese, T Foller, F Giubileo, G Luongo, L Croin, ...
Nanotechnology 28 (21), 214002, 2017
103 2017 Field emission from single and few-layer graphene flakes S Santandrea, F Giubileo, V Grossi, S Santucci, M Passacantando, ...
Applied Physics Letters 98 (16), 163109, 2011
95 2011 Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors A Di Bartolomeo, A Grillo, F Urban, L Iemmo, F Giubileo, G Luongo, ...
Advanced Functional Materials 28 (28), 1800657, 2018
89 2018 Multiwalled carbon nanotube films as small-sized temperature sensors A Di Bartolomeo, M Sarno, F Giubileo, C Altavilla, L Iemmo, S Piano, ...
Journal of Applied Physics 105 (6), 064518, 2009
85 2009 Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect A Di Bartolomeo, G Luongo, F Giubileo, N Funicello, G Niu, T Schroeder, ...
2D Materials 4 (2), 025075, 2017
78 2017 A local field emission study of partially aligned carbon-nanotubes by atomic force microscope probe A Di Bartolomeo, A Scarfato, F Giubileo, F Bobba, M Biasiucci, AM Cucolo, ...
Carbon 45 (15), 2957-2971, 2007
78 2007 Graphene field effect transistors with niobium contacts and asymmetric transfer characteristics A Di Bartolomeo, F Giubileo, F Romeo, P Sabatino, G Carapella, L Iemmo, ...
Nanotechnology 26 (47), 475202, 2015
75 2015 Charge transfer and partial pinning at the contacts as the origin of a double dip in the transfer characteristics of graphene-based field-effect transistors A Di Bartolomeo, F Giubileo, S Santandrea, F Romeo, R Citro, ...
Nanotechnology 22 (27), 275702, 2011
67 2011 Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device A Di Bartolomeo, F Giubileo, G Luongo, L Iemmo, N Martucciello, G Niu, ...
2D Materials 4 (1), 015024, 2016
64 2016 Electrical properties and memory effects of field-effect transistors from networks of single-and double-walled carbon nanotubes A Di Bartolomeo, M Rinzan, AK Boyd, Y Yang, L Guadagno, F Giubileo, ...
Nanotechnology 21 (11), 115204, 2010
64 2010 Leakage and field emission in side-gate graphene field effect transistors A Di Bartolomeo, F Giubileo, L Iemmo, F Romeo, S Russo, S Unal, ...
Applied Physics Letters 109 (2), 023510, 2016
62 2016 Field emission from a selected multiwall carbon nanotube M Passacantando, F Bussolotti, S Santucci, A Di Bartolomeo, F Giubileo, ...
Nanotechnology 19 (39), 395701, 2008
59 2008 A WSe 2 vertical field emission transistor A Di Bartolomeo, F Urban, M Passacantando, N McEvoy, L Peters, ...
Nanoscale 11 (4), 1538-1548, 2019
58 2019 Effect of back-gate on contact resistance and on channel conductance in graphene-based field-effect transistors A Di Bartolomeo, S Santandrea, F Giubileo, F Romeo, M Petrosino, ...
Diamond and Related Materials 38, 19-23, 2013
56 2013 Field emission from carbon nanostructures F Giubileo, A Di Bartolomeo, L Iemmo, G Luongo, F Urban
Applied Sciences 8 (4), 526, 2018
55 2018 Strong coupling and double-gap density of states in superconducting MgB2 F Giubileo, D Roditchev, W Sacks, R Lamy, J Klein
EPL (Europhysics Letters) 58 (5), 764, 2002
51 * 2002 IV and CV characterization of a high-responsivity graphene/silicon photodiode with embedded MOS capacitor G Luongo, F Giubileo, L Genovese, L Iemmo, N Martucciello, ...
Nanomaterials 7 (7), 158, 2017
50 2017 
Antonio Di BartolomeoSalerno UniversityEmail verificata su unisa.it
