Mike Kunze
Mike Kunze
Affiliazione sconosciuta
Email verificata su microgan.com
Citata da
Citata da
MOVPE growth of GaN on Si (1 1 1) substrates
A Dadgar, M Poschenrieder, J Bläsing, O Contreras, F Bertram, ...
Journal of Crystal Growth 248, 556-562, 2003
High-sheet-charge–carrier-density field-effect transistors on Si(111)
A Dadgar, F Schulze, J Bläsing, A Diez, A Krost, M Neuburger, E Kohn, ...
Applied physics letters 85 (22), 5400-5402, 2004
Piezoelectric GaN sensor structures
T Zimmermann, M Neuburger, P Benkart, FJ Hernández-Guillén, ...
IEEE electron device letters 27 (5), 309-312, 2006
Transient characteristics of GaN-based heterostructure field-effect transistors
E Kohn, I Daumiller, M Kunze, M Neuburger, M Seyboth, TJ Jenkins, ...
IEEE Transactions on Microwave Theory and Techniques 51 (2), 634-642, 2003
Field effect transistor
FH Bonn, GB Norris, JM Golio
US Patent 6,160,280, 2000
Field effect transistor
FH Bonn, GB Norris, JM Golio
US Patent 6,160,280, 2000
Diamond junction FETs based on δ-doped channels
A Aleksov, A Vescan, M Kunze, P Gluche, W Ebert, E Kohn, A Bergmeier, ...
Diamond and Related Materials 8 (2-5), 941-945, 1999
Diamond diodes and transistors
A Aleksov, A Denisenko, M Kunze, A Vescan, A Bergmaier, G Dollinger, ...
Semiconductor science and technology 18 (3), S59, 2003
P-channel InGaN-HFET structure based on polarization doping
T Zimmermann, M Neuburger, M Kunze, I Daumiller, A Denisenko, ...
IEEE Electron Device Letters 25 (7), 450-452, 2004
Unstrained InAlN/GaN HEMT structure
M Neuburger, T Zimmermann, E Kohn, A Dadgar, F Schulze, A Krtschil, ...
High Performance Devices, 161-166, 2005
Semiconductor sensor
M Kunze, I Daumiler
US Patent 8,129,725, 2012
δ-Doping in diamond
M Kunze, A Vescan, G Dollinger, A Bergmaier, E Kohn
Carbon 37 (5), 787-791, 1999
High‐current AlInN/GaN field effect transistors
A Dadgar, M Neuburger, F Schulze, J Bläsing, A Krtschil, I Daumiller, ...
physica status solidi (a) 202 (5), 832-836, 2005
Surface stability of InGaN-channel based HFETs
M Neuburger, I Daumiller, T Zimmermann, M Kunze, G Koley, ...
Electronics Letters 39 (22), 1614-1616, 2003
Strains and Stresses in GaN Heteroepitaxy--Sources and Control
A Dadgar, R Clos, G Strassburger, F Schulze, P Veit, T Hempel, J Bläsing, ...
Advances in Solid State Physics, 313-325, 2004
GaN power semiconductors for PV inverter applications-Opportunities and risks
T Stubbe, R Mallwitz, R Rupp, G Pozzovivo, W Bergner, O Haeberlen, ...
CIPS 2014; 8th International Conference on Integrated Power Electronics …, 2014
Crystallographic and electric properties of MOVPE-grown AlGaN/GaN-based FETs on Si (0 0 1) substrates
F Schulze, O Kisel, A Dadgar, A Krtschil, J Bläsing, M Kunze, I Daumiller, ...
Journal of crystal growth 299 (2), 399-403, 2007
Switching behaviour of GaN-based HFETs: thermal and electronic transients
E Kohn, I Daumiller, M Kunze, J Van Nostrand, J Sewell, T Jenkins
Electronics Letters 38 (12), 603-605, 2002
Anisotropic bow and plastic deformation of GaN on silicon
A Dadgar, S Fritze, O Schulz, J Hennig, J Bläsing, H Witte, A Diez, ...
Journal of crystal growth 370, 278-281, 2013
Analysis of surface charging effects in passivated AlGaN-GaN FETs using a MOS test electrode
M Neuburger, J Allgaier, T Zimmermann, I Daumiller, M Kunze, ...
IEEE Electron Device Letters 25 (5), 256-258, 2004
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