Amit Agarwal
Amit Agarwal
Associate Professor, Indian Institute of Technology, Kanpur (India)
Email verificata su iitk.ac.in - Home page
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Analysis and compact modeling of negative capacitance transistor with high ON-current and negative output differential resistance—Part II: Model validation
G Pahwa, T Dutta, A Agarwal, S Khandelwal, S Salahuddin, C Hu, ...
IEEE Transactions on Electron Devices 63 (12), 4986-4992, 2016
1102016
Electric field induced gap modification in ultrathin blue phosphorous
B Ghosh, S Nahas, S Bhowmick, A Agarwal
Phys. Rev. B 91, 115433, 2014
1042014
Doping Strategies for Monolayer MoS2 via Surface Adsorption: A Systematic Study
P Rastogi, S Kumar, S Bhowmick, A Agarwal, YS Chauhan
J. Phys. Chem. C 118 (51), 30309–30314, 2014
932014
Compact model for ferroelectric negative capacitance transistor with MFIS structure
G Pahwa, T Dutta, A Agarwal, YS Chauhan
IEEE Transactions on Electron Devices 64 (3), 1366-1374, 2017
622017
Physical insights on negative capacitance transistors in nonhysteresis and hysteresis regimes: MFMIS versus MFIS structures
G Pahwa, T Dutta, A Agarwal, YS Chauhan
IEEE Transactions on Electron Devices 65 (3), 867-873, 2018
512018
Performance evaluation of 7-nm node negative capacitance FinFET-based SRAM
T Dutta, G Pahwa, AR Trivedi, S Sinha, A Agarwal, YS Chauhan
IEEE Electron Device Letters 38 (8), 1161-1164, 2017
502017
Four allotropes of semiconducting layered arsenic that switch into a topological insulator via an electric field: Computational study
S Mardanya, VK Thakur, S Bhowmick, A Agarwal
Physical Review B 94 (3), 035423, 2016
502016
Thickness and electric-field-dependent polarizability and dielectric constant in phosphorene
P Kumar, BS Bhadoria, S Kumar, S Bhowmick, YS Chauhan, A Agarwal
Physical Review B 93 (19), 195428, 2016
492016
Numerical investigation of short-channel effects in negative capacitance MFIS and MFMIS transistors: Subthreshold behavior
G Pahwa, A Agarwal, YS Chauhan
IEEE Transactions on Electron Devices 65 (11), 5130-5136, 2018
472018
SnP3: A Previously Unexplored Two-Dimensional Material
B Ghosh, S Puri, A Agarwal, S Bhowmick
The Journal of Physical Chemistry C 122 (31), 18185-18191, 2018
452018
Effective doping of monolayer phosphorene by surface adsorption of atoms for electronic and spintronic applications
P Rastogi, S Kumar, S Bhowmick, A Agarwal, YS Chauhan
IETE Journal of Research 63 (2), 205-215, 2017
442017
Anisotropic plasmons, Friedel oscillations, and screening in borophene
K Sadhukhan, A Agarwal
Physical Review B 96 (3), 035410, 2017
432017
3D Dirac Plasmons in the Type-II Dirac Semimetal
A Politano, G Chiarello, B Ghosh, K Sadhukhan, CN Kuo, CS Lue, ...
Physical review letters 121 (8), 086804, 2018
422018
Anisotropic plasmons, excitons, and electron energy loss spectroscopy of phosphorene
B Ghosh, P Kumar, A Thakur, YS Chauhan, S Bhowmick, A Agarwal
Physical Review B 96 (3), 035422, 2017
392017
Designing energy efficient and hysteresis free negative capacitance FinFET with negative DIBL and 3.5X IONusing compact modeling approach
G Pahwa, T Dutta, A Agarwal, YS Chauhan
ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference, 49-54, 2016
392016
Plasmonics with two-dimensional semiconductors: from basic research to technological applications
A Agarwal, MS Vitiello, L Viti, A Cupolillo, A Politano
Nanoscale 10 (19), 8938-8946, 2018
382018
Long-lived spin plasmons in a spin-polarized two-dimensional electron gas
MEF A. Agarwal, M. Polini, G. Vignale
Phys. Rev. B 90, 155409, 2014
382014
Nonadiabatic charge pumping in a one-dimensional system of noninteracting electrons by an oscillating potential
A Agarwal, D Sen
Physical Review B 76 (23), 235316, 2007
382007
Enhancement of tunneling density of states at a junction of three Luttinger liquid wires
A Agarwal, S Das, S Rao, D Sen
Physical review letters 103 (2), 026401, 2009
372009
Equation of motion approach to non-adiabatic quantum charge pumping
A Agarwal, D Sen
Journal of Physics: Condensed Matter 19 (4), 046205, 2007
372007
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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