Theodore D Moustakas

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Roberto PaiellaProfessor of Electrical and Computer Engineering, Boston UniversityEmail verificata su bu.edu
Anirban BhattacharyyaUniversity of CalcuttaEmail verificata su caluniv.ac.in
Hock M. NgNokiaEmail verificata su nokia.com
Karl LudwigProfessor of Physics, Boston UniversityEmail verificata su bu.edu
Eleftherios IliopoulosDepartment of Physics, University of Crete & IESL-FORTHEmail verificata su physics.uoc.gr
Emmanouil DimakisGroup leader, Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum DresdenEmail verificata su hzdr.de
Marco FanciulliProfessor of Condensed Matter Physics, University of Milano BicoccaEmail verificata su unimib.it
Luca Dal NegroProfessor of Electrical and Computer Engineering, Boston UniversityEmail verificata su bu.edu
Piotr PerlinInstitute of High Pressure PhysicsEmail verificata su unipress.waw.pl
Henryk TeisseyreInstitute of Physics of the Polish Academy of SciencesEmail verificata su ifpan.edu.pl
Wei ZhangBoston University Photonics CenterEmail verificata su physics.bu.edu
Soumendra BasuAssociate Division Head, Materials Science & Engineering; Professor, Mechanical Engineering, BostonEmail verificata su bu.edu
Emanuele Francesco PecoraAdvanced Solar Energy R&D Specialist, Solar Energy Technologies Office, US Department of EnergyEmail verificata su ee.doe.gov
Papo Chen, T.C. Chen, Tai-Chou Che...Boston UniversityEmail verificata su amat.com
Michał LeszczynskiEmail verificata su unipress.waw.pl
C.R. Eddy, Jr.U.S. Naval Research LaboratoryEmail verificata su nrl.navy.mil
Enrico BellottiBoston University Georgia Institute of TechnologyEmail verificata su bu.edu
Cristian StagarescuOptical Engineer SPE (Senior Principal Engineer), Photonic Devices Development, MACOMEmail verificata su macom.com
Eleni PalouraProfessor of Physics, Aristotle University of ThessalonikiEmail verificata su auth.gr
Katsikini M.Aristotle University of ThessalonikiEmail verificata su auth.gr

Theodore D Moustakas

Boston University

Email verificata su bu.edu - Home page

nitride semiconductors amorphous semiconductors III-V compounds diamond thin films and metallic multi-layers


Titolo Ordina per citazioni Ordina per anno Ordina per titolo	Citata da Citata da	Anno
Scattering of electrons at threading dislocations in GaN NG Weimann, LF Eastman, D Doppalapudi, HM Ng, TD Moustakas Journal of Applied Physics 83 (7), 3656-3659, 1998	737	1998
Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition R Singh, D Doppalapudi, TD Moustakas, LT Romano Applied Physics Letters 70 (9), 1089-1091, 1997	577	1997
Epitaxial growth and characterization of zinc‐blende gallium nitride on (001) silicon T Lei, TD Moustakas, RJ Graham, Y He, SJ Berkowitz Journal of Applied Physics 71 (10), 4933-4943, 1992	524	1992
Gallium Nitride (GaN) JI Pankove, TD Moustakas Acad. Press 50, p15, 1998	497*	1998
The role of dislocation scattering in n-type GaN films HM Ng, D Doppalapudi, TD Moustakas, NG Weimann, LF Eastman Applied physics letters 73 (6), 821-823, 1998	488	1998
Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon T Lei, M Fanciulli, RJ Molnar, TD Moustakas, RJ Graham, J Scanlon Applied physics letters 59 (8), 944-946, 1991	473	1991
Metal contacts to gallium nitride JS Foresi, TD Moustakas Applied physics letters 62 (22), 2859-2861, 1993	465	1993
Towards the identification of the dominant donor in GaN P Perlin, T Suski, H Teisseyre, M Leszczynski, I Grzegory, J Jun, ... Physical review letters 75 (2), 296, 1995	374	1995
Growth of GaN by ECR-assisted MBE TD Moustakas, T Lei, RJ Molnar Wide-Band-Gap Semiconductors, 36-49, 1993	338	1993
Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates T Lei, KF Ludwig Jr, TD Moustakas Journal of applied physics 74 (7), 4430-4437, 1993	325	1993
Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy D Doppalapudi, SN Basu, KF Ludwig Jr, TD Moustakas Journal of Applied Physics 84 (3), 1389-1395, 1998	303	1998
Doping, Schottky barrier and p n junction formation in amorphous germanium and silicon by rf sputtering W Paul, AJ Lewis, GAN Connell, TD Moustakas Solid State Communications 20 (10), 969-972, 1976	297	1976
Thermal expansion of gallium nitride M Leszczynski, T Suski, H Teisseyre, P Perlin, I Grzegory, J Jun, ... Journal of applied physics 76 (8), 4909-4911, 1994	264	1994
Optical Devices Featuring textured semiconductor layers JSC TD Moustakas US Patent 8,035,113, 2011	254	2011
Effect of nitrogen on the growth of diamond films S Jin, TD Moustakas Applied Physics Letters 65 (4), 403-405, 1994	250	1994
Mechanism of yellow luminescence in GaN T Suski, P Perlin, H Teisseyre, M Leszczyński, I Grzegory, J Jun, ... Applied physics letters 67 (15), 2188-2190, 1995	246	1995
Growth of gallium nitride by electron‐cyclotron resonance plasma‐assisted molecular‐beam epitaxy: The role of charged species RJ Molnar, TD Moustakas Journal of Applied Physics 76 (8), 4587-4595, 1994	231	1994
Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer H Teisseyre, P Perlin, T Suski, I Grzegory, S Porowski, J Jun, A Pietraszko, ... Journal of applied physics 76 (4), 2429-2434, 1994	216	1994
Electron transport mechanism in gallium nitride RJ Molnar, T Lei, TD Moustakas Applied physics letters 62 (1), 72-74, 1993	208	1993
Blue‐violet light emitting gallium nitride p‐n junctions grown by electron cyclotron resonance‐assisted molecular beam epitaxy RJ Molnar, R Singh, TD Moustakas Applied physics letters 66 (3), 268-270, 1995	200	1995

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