Organoaminodisilane precursors and methods for depositing films comprising same M Xiao, X Lei, DP Spence, H Chandra, B Han, ML O'neill, SG Mayorga, ...
US Patent App. 13/902,300, 2013
474 2013 Barrier materials for display devices RG Ridgeway, AD Johnson, A Mallikarjunan, RN Vrtis, X Lei, ML O'neill, ...
US Patent 10,319,862, 2019
435 2019 Compositions and methods for making silicon containing films A Mallikarjunan, AD Johnson, M Wang, RN Vrtis, B Han, X Lei, ML O'neill
US Patent 11,626,279, 2023
372 2023 Compositions and Methods Using Same for Carbon Doped Silicon Containing Films H Chandra, X Lei, A Mallikarjunan, M Kim
US Patent App. 15/654,426, 2018
276 2018 Compositions and methods for the deposition of silicon oxide films A Mallikarjunan, H Chandra, M Xiao, X Lei, KS Cuthill, ML O'neill
US Patent App. 14/661,652, 2015
254 2015 Methods for depositing silicon nitride films H Chandra, A Mallikarjunan, X Lei, M Kim, KS Cuthill, ML O'neill
US Patent 9,905,415, 2018
239 2018 Dual stress liner for high performance sub-45nm gate length SOI CMOS manufacturing HS Yang, R Malik, S Narasimha, Y Li, R Divakaruni, P Agnello, S Allen, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
234 2004 -phase tungsten nanorod formation by oblique-angle sputter depositionT Karabacak, A Mallikarjunan, JP Singh, D Ye, GC Wang, TM Lu
Applied physics letters 83 (15), 3096-3098, 2003
151 2003 Metal drift behavior in low dielectric constant organosiloxane polymer A Mallikarjunan, SP Murarka, TM Lu
Applied Physics Letters 79 (12), 1855-1857, 2001
87 2001 Method of producing highly strained PECVD silicon nitride thin films at low temperature MP Belyansky, O Gluschenkov, Y Li, A Mallikarjunan
US Patent 7,585,704, 2009
60 2009 Atomic Layer Deposition of Silicon Dioxide Using Aminosilanes Di-sec -butylaminosilane and Bis(tert -butylamino)silane with Ozone LF Pena, CE Nanayakkara, A Mallikarjunan, H Chandra, M Xiao, X Lei, ...
The Journal of Physical Chemistry C 120 (20), 10927-10935, 2016
54 2016 Methods of producing plasma enhanced chemical vapor deposition silicon nitride thin films with high compressive and tensile stress M Belyansky, M Chace, O Gluschenkov, J Kempisty, N Klymko, A Madan, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 26 (3 …, 2008
54 2008 Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec -butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies T Faraz, M van Drunen, HCM Knoops, A Mallikarjunan, I Buchanan, ...
ACS Applied Materials & Interfaces 9 (2), 1858-1869, 2017
51 2017 The effect of interfacial chemistry on metal ion penetration into polymeric films A Mallikarjunan, J Juneja, G Yang, SP Murarka, TM Lu
MRS Online Proceedings Library (OPL) 734, B9. 60, 2002
45 2002 Designing high performance precursors for atomic layer deposition of silicon oxide A Mallikarjunan, H Chandra, M Xiao, X Lei, RM Pearlstein, HR Bowen, ...
Journal of Vacuum Science & Technology A 33 (1), 2015
42 2015 Compositions and methods using same for carbon doped silicon containing films H Chandra, KS Cuthill, A Mallikarjunan, X Lei, MR MacDonald, M Xiao, ...
US Patent 10,145,008, 2018
40 2018 Resistivity of copper films at thicknesses near the mean free path of electrons in copper minimization of the diffuse scattering in copper A Mallikarjunan, S Sharma, SP Murarka
Electrochemical and Solid-State Letters 3 (9), 437, 2000
38 2000 Molecular caulking: a pore sealing CVD polymer for ultralow k dielectrics C Jezewski, CJ Wiegand, D Ye, A Mallikarjunan, D Liu, C Jin, WA Lanford, ...
Journal of the Electrochemical Society 151 (7), F157, 2004
32 2004 Mobile ion detection in organosiloxane polymer using triangular voltage sweep A Mallikarjunan, SP Murarka, TM Lu
Journal of the Electrochemical Society 149 (10), F155, 2002
32 2002 Silicon precursor development for advanced dielectric barriers for VLSI technology A Mallikarjunan, AD Johnson, L Matz, RN Vrtis, A Derecskei-Kovacs, ...
Microelectronic engineering 92, 83-85, 2012
29 2012