Giuseppe LUONGO
Giuseppe LUONGO
Dottorando presso il Dipartimento di Fisica "E.R. Caianiello", UniversitÓ di Salerno
Email verificata su unisa.it
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Hysteresis in the transfer characteristics of MoS2 transistors
A Di Bartolomeo, L Genovese, F Giubileo, L Iemmo, G Luongo, T Foller, ...
2D Materials 5 (1), 015014, 2017
1402017
Electrical transport and persistent photoconductivity in monolayer MoS2 phototransistors
A Di Bartolomeo, L Genovese, T Foller, F Giubileo, G Luongo, L Croin, ...
Nanotechnology 28 (21), 214002, 2017
1212017
Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors
A Di Bartolomeo, A Grillo, F Urban, L Iemmo, F Giubileo, G Luongo, ...
Advanced Functional Materials 28 (28), 1800657, 2018
1032018
Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device
A Di Bartolomeo, F Giubileo, G Luongo, L Iemmo, N Martucciello, G Niu, ...
2D Materials 4 (1), 015024, 2016
1022016
Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect
A Di Bartolomeo, G Luongo, F Giubileo, N Funicello, G Niu, T Schroeder, ...
2D Materials 4 (2), 025075, 2017
962017
A WSe 2 vertical field emission transistor
A Di Bartolomeo, F Urban, M Passacantando, N McEvoy, L Peters, ...
Nanoscale 11 (4), 1538-1548, 2019
692019
Field emission from carbon nanostructures
F Giubileo, A Di Bartolomeo, L Iemmo, G Luongo, F Urban
Applied Sciences 8 (4), 526, 2018
622018
IV and CV characterization of a high-responsivity graphene/silicon photodiode with embedded MOS capacitor
G Luongo, F Giubileo, L Genovese, L Iemmo, N Martucciello, ...
Nanomaterials 7 (7), 158, 2017
562017
Graphene–silicon Schottky diodes for photodetection
A Di Bartolomeo, G Luongo, L Iemmo, F Urban, F Giubileo
IEEE Transactions on Nanotechnology 17 (6), 1133-1137, 2018
492018
Electronic properties of graphene/p-silicon Schottky junction
G Luongo, A Di Bartolomeo, F Giubileo, CA Chavarin, C Wenger
Journal of Physics D: Applied Physics 51 (25), 255305, 2018
392018
Effect of Electron Irradiation on the Transport and Field Emission Properties of Few-Layer MoS2 Field-Effect Transistors
F Giubileo, L Iemmo, M Passacantando, F Urban, G Luongo, L Sun, ...
The Journal of Physical Chemistry C 123 (2), 1454-1461, 2018
342018
Gas dependent hysteresis in MoS2 field effect transistors
F Urban, F Giubileo, A Grillo, L Iemmo, G Luongo, M Passacantando, ...
2D Materials 6 (4), 045049, 2019
312019
Graphene enhanced field emission from InP nanocrystals
L Iemmo, A Di Bartolomeo, F Giubileo, G Luongo, M Passacantando, ...
Nanotechnology 28 (49), 495705, 2017
312017
Field emission from self-catalyzed GaAs nanowires
F Giubileo, A Di Bartolomeo, L Iemmo, G Luongo, M Passacantando, ...
Nanomaterials 7 (9), 275, 2017
282017
Transport and field emission properties of buckypapers obtained from aligned carbon nanotubes
F Giubileo, L Iemmo, G Luongo, N Martucciello, M Raimondo, ...
Journal of materials science 52 (11), 6459-6468, 2017
242017
Field emission characterization of MoS2 nanoflowers
F Giubileo, A Grillo, M Passacantando, F Urban, L Iemmo, G Luongo, ...
Nanomaterials 9 (5), 717, 2019
202019
High field-emission current density from β-Ga2O3 nanopillars
A Grillo, J Barrat, Z Galazka, M Passacantando, F Giubileo, L Iemmo, ...
Applied Physics Letters 114 (19), 193101, 2019
182019
Bias tunable photocurrent in metal-insulator-semiconductor heterostructures with photoresponse enhanced by carbon nanotubes
A Di Bartolomeo, F Giubileo, A Grillo, G Luongo, L Iemmo, F Urban, ...
Nanomaterials 9 (11), 1598, 2019
152019
Graphene Schottky junction on pillar patterned silicon substrate
G Luongo, A Grillo, F Giubileo, L Iemmo, M Lukosius, ...
Nanomaterials 9 (5), 659, 2019
102019
Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device. 2D Mater
AD Bartolomeo, F Giubileo, G Luongo, L Iemmo, N Martucciello, G Niu, ...
102017
Il sistema al momento non pu˛ eseguire l'operazione. Riprova pi¨ tardi.
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