Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2 L Yang, K Majumdar, H Liu, Y Du, H Wu, M Hatzistergos, PY Hung, ...
Nano letters 14 (11), 6275-6280, 2014
752 2014 Field-Effect Transistors With Graphene/Metal HeterocontactsY Du, L Yang, J Zhang, H Liu, K Majumdar, PD Kirsch, DY Peide
IEEE electron device letters 35 (5), 599-601, 2014
172 2014 Sub-kT/q Switching in Strong Inversion in PbZr0.52 Ti0.48 O3 Gated Negative Capacitance FETs S Dasgupta, A Rajashekhar, K Majumdar, N Agrawal, A Razavieh, ...
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 …, 2015
142 2015 SOFM-MLP: a hybrid neural network for atmospheric temperature prediction NR Pal, S Pal, J Das, K Majumdar
IEEE Transactions on Geoscience and Remote Sensing 41 (12), 2783-2791, 2003
92 2003 High-performance MoS2 field-effect transistors enabled by chloride doping: Record low contact resistance (0.5 kΩ·µm) and record high drain current (460 µA/µm) L Yang, K Majumdar, Y Du, H Liu, H Wu, M Hatzistergos, PY Hung, ...
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014
87 2014 Nature of carrier injection in metal/2D semiconductor interface and its implications to the limits of contact resistance D Somvanshi, S Kallatt, C Venkatesh, S Nair, G Gupta, JK Anthony, ...
Physical Review B 96, 205423, 2017
79 2017 Gate-Tunable WSe2 /SnSe2 Backward Diode with Ultrahigh-Reverse Rectification Ratio K Murali, M Dandu, S Das, K Majumdar
ACS applied materials & interfaces 10 (6), 5657-5664, 2018
68 2018 Benchmarking transition metal dichalcogenide MOSFET in the ultimate physical scaling limit K Majumdar, C Hobbs, PD Kirsch
IEEE Electron Device Letters 35 (3), 402-404, 2014
63 2014 Direct observation of giant binding energy modulation of exciton complexes in monolayer G Gupta, S Kallatt, K Majumdar
Physical Review B 96 (8), 081403, 2017
51 2017 Revisiting the theory of ferroelectric negative capacitance K Majumdar, S Datta, SP Rao
IEEE Transactions on Electron Devices 63 (5), 2043-2049, 2016
50 2016 Photoresponse of atomically thin MoS 2 layers and their planar heterojunctions S Kallatt, G Umesh, N Bhat, K Majumdar
Nanoscale 8 (33), 15213-15222, 2016
42 2016 Benchmarking and improving III-V Esaki diode performance with a record 2.2 MA/cm2 peak current density to enhance TFET drive current D Pawlik, B Romanczyk, P Thomas, S Rommel, M Edirisooriya, ...
2012 International Electron Devices Meeting, 27.1. 1-27.1. 3, 2012
36 2012 Mobile user tracking using a hybrid neural network K Majumdar, N Das
Wireless networks 11, 275-284, 2005
35 2005 Layer degree of freedom for excitons in transition metal dichalcogenides S Das, G Gupta, K Majumdar
Physical Review B 99 (16), 165411, 2019
33 2019 Highly Sensitive, Fast Graphene Photodetector with Responsivity >106 A/W Using a Floating Quantum Well Gate K Murali, N Abraham, S Das, S Kallatt, K Majumdar
ACS applied materials & interfaces 11 (33), 30010-30018, 2019
29 2019 Self-Powered, Highly Sensitive, High-Speed Photodetection Using ITO/WSe2 /SnSe2 Vertical Heterojunction K Murali, K Majumdar
IEEE Transactions on Electron Devices 65 (10), 4141-4148, 2018
29 2018 Accurate Extraction of Schottky Barrier Height and Universality of Fermi Level De‐Pinning of van der Waals Contacts K Murali, M Dandu, K Watanabe, T Taniguchi, K Majumdar
Advanced Functional Materials 31 (18), 2010513, 2021
28 2021 Gate-and Light-Tunable Negative Differential Resistance with High Peak Current Density in 1T-TaS2/2H-MoS2 T-Junction M Mahajan, K Majumdar
ACS nano 14 (6), 6803-6811, 2020
26 2020 Fundamental exciton linewidth broadening in monolayer transition metal dichalcogenides G Gupta, K Majumdar
Physical Review B 99 (8), 085412, 2019
26 2019 Asymmetrically Encapsulated Vertical ITO/MoS2 /Cu2 O Photodetector with Ultrahigh Sensitivity S Kallatt, S Nair, K Majumdar
Small 14 (3), 1702066, 2018
26 2018