Christopher M. Neumann
Christopher M. Neumann
Verified email at
Cited by
Cited by
Transport in nanoribbon interconnects obtained from graphene grown by chemical vapor deposition
A Behnam, AS Lyons, MH Bae, EK Chow, S Islam, CM Neumann, E Pop
Nano letters 12 (9), 4424-4430, 2012
Energy Dissipation in Monolayer MoS2 Electronics
E Yalon, CJ McClellan, KKH Smithe, M Muñoz Rojo, RL Xu, ...
Nano Letters 17 (6), 3429–3433, 2017
Phase-Change Memory—Towards a Storage-Class Memory
SW Fong, CM Neumann, HSP Wong
IEEE Transactions on Electron Devices 64 (11), 4374-4385, 2017
Energy-Efficient Phase-Change Memory with Graphene as a Thermal Barrier
C Ahn, SW Fong, Y Kim, S Lee, A Sood, CM Neumann, M Asheghi, ...
Nano letters 15 (10), 6809-6814, 2015
Temperature-Dependent Thermal Boundary Conductance of Monolayer MoS2 by Raman Thermometry
E Yalon, OB Aslan, KKH Smithe, CJ McClellan, SV Suryavanshi, F Xiong, ...
ACS applied materials & interfaces 9 (49), 43013-43020, 2017
Stanford memory trends
HSP Wong, C Ahn, J Cao, HY Chen, SW Fong, Z Jiang, C Neumann, ...
tech. report, 2016
Spatially resolved thermometry of resistive memory devices
E Yalon, S Deshmukh, MM Rojo, F Lian, CM Neumann, F Xiong, E Pop
Scientific Reports 7 (1), 15360, 2017
Towards ultimate scaling limits of phase-change memory
F Xiong, E Yalon, A Behnam, CM Neumann, KL Grosse, S Deshmukh, ...
2016 IEEE International Electron Devices Meeting (IEDM), 4.1. 1-4.1. 4, 2016
Dual-Layer Dielectric Stack for Thermally Isolated Low-Energy Phase-Change Memory
SW Fong, CM Neumann, E Yalon, MM Rojo, E Pop, HSP Wong
IEEE Transactions on Electron Devices 64 (11), 4496-4502, 2017
Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
CJ Brennan, CM Neumann, SA Vitale
Journal of Applied Physics 118 (4), 045307, 2015
Understanding the switching mechanism of interfacial phase change memory
KL Okabe, A Sood, E Yalon, CM Neumann, M Asheghi, E Pop, ...
Journal of Applied Physics 125 (18), 184501, 2019
Engineering thermal and electrical interface properties of phase change memory with monolayer MoS2
CM Neumann, KL Okabe, E Yalon, RW Grady, HSP Wong, E Pop
Applied Physics Letters 114 (8), 082103, 2019
Fundamental Limits of Current Flow in One-dimensional Carbon Nanomaterials
A Liao, C Neumann, E Pop
APS March Meeting Abstracts, 2012
Energy-Efficient Phase Change Memory Programming by Nanosecond Pulses
E Yalon, K Okabe, CM Neumann, HSP Wong, E Pop
2018 76th Device Research Conference (DRC), 1-2, 2018
Graphene-inserted phase change memory device and method of fabricating the same
Y Kim, C Ahn, A Sood, E Pop, HSP Wong, KE Goodson, S Fong, S Lee, ...
US Patent 9,583,702, 2017
Black Magic Pro 4” Graphene Furnace Development and Characterization
NC Wang, CM Neumann, SNF Mentors, M Rincon, T Berg
The system can't perform the operation now. Try again later.
Articles 1–16