| Epitaxial growth of a monolayer WSe2-MoS2 lateral pn junction with an atomically sharp interface MY Li, Y Shi, CC Cheng, LS Lu, YC Lin, HL Tang, ML Tsai, CW Chu, ... Science 349 (6247), 524-528, 2015 | 1192 | 2015 |
| Ultralow contact resistance between semimetal and monolayer semiconductors PC Shen, C Su, Y Lin, AS Chou, CC Cheng, JH Park, MH Chiu, AY Lu, ... Nature 593 (7858), 211-217, 2021 | 703 | 2021 |
| Room‐Temperature Ferroelectricity in Hexagonally Layered α‐In2Se3 Nanoflakes down to the Monolayer Limit F Xue, W Hu, KC Lee, LS Lu, J Zhang, HL Tang, A Han, WT Hsu, S Tu, ... Advanced Functional Materials 28 (50), 1803738, 2018 | 283 | 2018 |
| Mixed-dimensional MXene-hydrogel heterostructures for electronic skin sensors with ultrabroad working range Y Cai, J Shen, CW Yang, Y Wan, HL Tang, AA Aljarb, C Chen, JH Fu, ... Science advances 6 (48), eabb5367, 2020 | 200 | 2020 |
| Substrate lattice-guided seed formation controls the orientation of 2D transition-metal dichalcogenides A Aljarb, Z Cao, HL Tang, JK Huang, M Li, W Hu, L Cavallo, LJ Li ACS nano 11 (9), 9215-9222, 2017 | 128 | 2017 |
| Multilayer Graphene–WSe2 Heterostructures for WSe2 Transistors HL Tang, MH Chiu, CC Tseng, SH Yang, KJ Hou, SY Wei, JK Huang, ... ACS nano 11 (12), 12817-12823, 2017 | 106 | 2017 |
| Band alignment of 2D transition metal dichalcogenide heterojunctions MH Chiu, WH Tseng, HL Tang, YH Chang, CH Chen, WT Hsu, WH Chang, ... Advanced Functional Materials 27 (19), 1603756, 2017 | 91 | 2017 |
| Metal‐guided selective growth of 2D materials: demonstration of a bottom‐up CMOS inverter MH Chiu, HL Tang, CC Tseng, Y Han, A Aljarb, JK Huang, Y Wan, JH Fu, ... Advanced Materials 31 (18), 1900861, 2019 | 45 | 2019 |
| Vertical transistor and method of manufacturing the same CH Diaz, CH Wang, WY Lien, KC Yang, HL Tang US Patent 9,911,848, 2018 | 39 | 2018 |
| Unveiling defect-mediated carrier dynamics in monolayer semiconductors by spatiotemporal microwave imaging Z Chu, CY Wang, J Quan, C Zhang, C Lei, A Han, X Ma, HL Tang, ... Proceedings of the National Academy of Sciences 117 (25), 13908-13913, 2020 | 35 | 2020 |
| Analysis of relative intensity noise spectra for uniformly and chirpily stacked InAs–InGaAs–GaAs quantum dot lasers G Lin, HL Tang, HC Cheng, HL Chen Journal of lightwave technology 30 (3), 331-336, 2011 | 15 | 2011 |
| Strain-directed layer-by-layer epitaxy toward van der Waals homo-and heterostructures Y Wan, JK Huang, CP Chuu, WT Hsu, CJ Lee, A Aljarb, CW Huang, ... ACS Materials Letters 3 (4), 442-453, 2021 | 13 | 2021 |
| Epitaxial Growth and Determination of Band Alignment of Bi2Te3–WSe2 Vertical van der Waals Heterojunctions CW Yang, HL Tang, S Sattar, MH Chiu, Y Wan, CH Chen, J Kong, ... ACS Materials Letters 2 (10), 1351-1359, 2020 | 12 | 2020 |
| Contact engineering for high-performance N-type 2D semiconductor transistors Y Lin, PC Shen, C Su, AS Chou, T Wu, CC Cheng, JH Park, MH Chiu, ... 2021 IEEE International Electron Devices Meeting (IEDM), 37.2. 1-37.2. 4, 2021 | 7 | 2021 |
| Semiconductor device including a semiconductor sheet interconnecting a source region and a drain region HL Tang, JH Ho, SH Sia, WH Hsieh, CW Tsai US Patent 9,711,596, 2017 | 5 | 2017 |
| Performance Limits and Potential of Multilayer Graphene–Tungsten Diselenide Heterostructures SH Yang, FS Yang, HL Tang, MH Chiu, KC Lee, M Li, CY Lin, LJ Li, ... Advanced Electronic Materials 7 (12), 2100355, 2021 | 2 | 2021 |
| Semiconductor device including a semiconductor sheet interconnecting a source region and a drain region HL Tang, JH Ho, SH Sia, WH Hsieh, CW Tsai US Patent 10,367,063, 2019 | 2 | 2019 |
| 2D Materials: Metal‐Guided Selective Growth of 2D Materials: Demonstration of a Bottom‐Up CMOS Inverter (Adv. Mater. 18/2019) MH Chiu, HL Tang, CC Tseng, Y Han, A Aljarb, JK Huang, Y Wan, JH Fu, ... Advanced Materials 31 (18), 1970132, 2019 | 1 | 2019 |
| Interpenetrated Graphene/WSe2 Lateral Heterostructures for Barrierless Ohmic-Contacted p-FETs HL Tang, MH Chiu, CC Tseng, CH Lien, LJ Li Electrochemical Society Meeting Abstracts 229, 1300-1300, 2016 | 1 | 2016 |
| Method for growing a transition metal dichalcogenide layer, transition metal dichalcogenide growth device, and method for forming a semiconductor device MH Chiu, HL Tang, LJ Li US Patent 11,538,682, 2022 | | 2022 |
