Ultra-high-yield growth of vertical single-walled carbon nanotubes: Hidden roles of hydrogen and oxygen G Zhang, D Mann, L Zhang, A Javey, Y Li, E Yenilmez, Q Wang, ...
Proceedings of the National Academy of Sciences 102 (45), 16141-16145, 2005
548 2005 Two-dimensional thermal oxidation of silicon. II. Modeling stress effects in wet oxides DB Kao, JP Mcvittie, WD Nix, KC Saraswat
IEEE transactions on electron devices 35 (1), 25-37, 1988
447 1988 Two-dimensional thermal oxidation of silicon—I. Experiments DB Kao, JP McVittie, WD Nix, KC Saraswat
IEEE Transactions on Electron Devices 34 (5), 1008-1017, 1987
313 1987 Technology and reliability constrained future copper interconnects. I. Resistance modeling P Kapur, JP McVittie, KC Saraswat
IEEE Transactions on electron devices 49 (4), 590-597, 2002
300 2002 A tuned Langmuir probe for measurements in rf glow discharges AP Paranjpe, JP McVittie, SA Self
Journal of Applied Physics 67 (11), 6718-6727, 1990
241 1990 Ge-interface engineering with ozone oxidation for low interface-state density D Kuzum, T Krishnamohan, AJ Pethe, AK Okyay, Y Oshima, Y Sun, ...
IEEE Electron Device Letters 29 (4), 328-330, 2008
226 2008 Notching as an example of charging in uniform high density plasmas T Kinoshita, M Hane, JP McVittie
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996
203 1996 Thin-oxide damage from gate charging during plasma processing S Fang, JP McVittie
IEEE Electron Device Letters 13 (5), 288-290, 1992
188 1992 Electrical properties of heavily doped polycrystalline silicon-germanium films TJ King, JP McVittie, KC Saraswat, JR Pfiester
IEEE Transactions on Electron devices 41 (2), 228-232, 1994
185 1994 Simulation of profile evolution in silicon reactive ion etching with re‐emission and surface diffusion VK Singh, ESG Shaqfeh, JP McVittie
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1992
185 1992 Technology and reliability constrained future copper interconnects. II. Performance implications P Kapur, G Chandra, JP McVittie, KC Saraswat
IEEE Transactions on Electron Devices 49 (4), 598-604, 2002
155 2002 How plasma etching damages thin gate oxides CT Gabriel, JP McVittie
Solid State Technology 35 (6), 81-88, 1992
138 1992 Resistive Switching Mechanism in Nonvolatile Memory Devices Z Wang, PB Griffin, J McVittie, S Wong, PC McIntyre, Y Nishi
IEEE electron device letters 28 (1), 14-16, 2006
121 2006 A 3‐dimensional model for low‐pressure chemical‐vapor‐deposition step coverage in trenches and circular vias MM IslamRaja, MA Cappelli, JP McVittie, KC Saraswat
Journal of applied physics 70 (11), 7137-7140, 1991
121 1991 SPEEDIE: A profile simulator for etching and deposition JP McVittie, JC Rey, AJ Bariya, MM IslamRaja, LY Cheng, S Ravi, ...
Advanced Techniques for Integrated Circuit Processing 1392, 126-138, 1991
114 1991 Experimental study of biaxial and uniaxial strain effects on carrier mobility in bulk and ultrathin-body SOI MOSFETs K Uchida, R Zednik, CH Lu, H Jagannathan, J McVittie, PC McIntyre, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
109 2004 Monte Carlo low pressure deposition profile simulations JC Rey, LY Cheng, JP McVittie, KC Saraswat
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 9 (3 …, 1991
104 1991 A model and experiments for thin oxide damage from wafer charging in magnetron plasmas S Fang, JP McVittie
IEEE electron device letters 13 (6), 347-349, 1992
102 1992 Interface-engineered Ge (100) and (111), N-and P-FETs with high mobility D Kuzum, AJ Pethe, T Krishnamohan, Y Oshima, Y Sun, JP McVittie, ...
2007 IEEE International Electron Devices Meeting, 723-726, 2007
100 2007 A polycrystalline-Si/sub 1-x/Ge/sub x/-gate CMOS technology TJ King, JR Pfiester, JD Shott, JP McVittie, KC Saraswat
International Technical Digest on Electron Devices, 253-256, 1990
100 1990