Brent P. Gila
Brent P. Gila
Verified email at ufl.edu
Title
Cited by
Cited by
Year
Magnetic properties of n-GaMnN thin films
GT Thaler, ME Overberg, B Gila, R Frazier, CR Abernathy, SJ Pearton, ...
Applied Physics Letters 80 (21), 3964-3966, 2002
4292002
GaN-based diodes and transistors for chemical, gas, biological and pressure sensing
SJ Pearton, BS Kang, S Kim, F Ren, BP Gila, CR Abernathy, J Lin, ...
Journal of Physics: Condensed Matter 16 (29), R961, 2004
3712004
Rectification at graphene-semiconductor interfaces: zero-gap semiconductor-based diodes
S Tongay, M Lemaitre, X Miao, B Gila, BR Appleton, AF Hebard
Physical Review X 2 (1), 011002, 2012
3072012
Electrical transport properties of single ZnO nanorods
YW Heo, LC Tien, DP Norton, BS Kang, F Ren, BP Gila, SJ Pearton
Applied Physics Letters 85 (11), 2002-2004, 2004
2072004
Electrical transport properties of single ZnO nanorods
YW Heo, LC Tien, DP Norton, BS Kang, F Ren, BP Gila, SJ Pearton
Applied Physics Letters 85 (11), 2002-2004, 2004
2072004
Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors
B Luo, JW Johnson, J Kim, RM Mehandru, F Ren, BP Gila, AH Onstine, ...
Applied physics letters 80 (9), 1661-1663, 2002
2072002
Reliability studies of AlGaN/GaN high electron mobility transistors
DJ Cheney, EA Douglas, L Liu, CF Lo, YY Xi, BP Gila, F Ren, D Horton, ...
SEMICONDUCTOR SCIENCE AND TECHNOLOGY 28 (7), 2013
178*2013
Pressure-induced changes in the conductivity of AlGaN∕ GaN high-electron mobility-transistor membranes
BS Kang, S Kim, F Ren, JW Johnson, RJ Therrien, P Rajagopal, ...
Applied physics letters 85 (14), 2962-2964, 2004
1532004
AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using as the gate oxide and surface passivation
R Mehandru, B Luo, J Kim, F Ren, BP Gila, AH Onstine, CR Abernathy, ...
Applied physics letters 82 (15), 2530-2532, 2003
1512003
Gd2O3/GaN metal-oxide-semiconductor field-effect transistor
JW Johnson, B Luo, F Ren, BP Gila, W Krishnamoorthy, CR Abernathy, ...
Applied Physics Letters 77 (20), 3230-3232, 2000
1402000
Solid-State Electron
J Kim, B Gila, GY Chung, CR Abernathy, SJ Pearton, F Ren
Solid-State Electron. 15 (10), 1121, 1972
133*1972
MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors
Y Irokawa, Y Nakano, M Ishiko, T Kachi, J Kim, F Ren, BP Gila, ...
Applied physics letters 84 (15), 2919-2921, 2004
1312004
Room temperature hydrogen detection using Pd-coated GaN nanowires
W Lim, JS Wright, BP Gila, JL Johnson, A Ural, T Anderson, F Ren, ...
Applied Physics Letters 93 (7), 072109, 2008
1282008
Hydrogen and ozone gas sensing using multiple ZnO nanorods
BS Kang, YW Heo, LC Tien, DP Norton, F Ren, BP Gila, SJ Pearton
Applied Physics A 80 (5), 1029-1032, 2005
1252005
Characteristics of MgO/GaN gate-controlled metal–oxide–semiconductor diodes
J Kim, R Mehandru, B Luo, F Ren, BP Gila, AH Onstine, CR Abernathy, ...
Applied physics letters 80 (24), 4555-4557, 2002
1252002
Graphene/GaN Schottky diodes: Stability at elevated temperatures
S Tongay, M Lemaitre, T Schumann, K Berke, BR Appleton, B Gila, ...
Applied Physics Letters 99 (10), 102102, 2011
1202011
Gadolinium oxide and scandium oxide: gate dielectrics for GaN MOSFETs
BP Gila, JW Johnson, R Mehandru, B Luo, AH Onstine, V Krishnamoorthy, ...
physica status solidi (a) 188 (1), 239-242, 2001
1102001
GaN electronics for high power, high temperature applications
SJ Pearton, F Ren, AP Zhang, G Dang, XA Cao, KP Lee, H Cho, BP Gila, ...
Materials Science and Engineering: B 82 (1-3), 227-231, 2001
1052001
AlGaN/GaN-based metal–oxide–semiconductor diode-based hydrogen gas sensor
BS Kang, F Ren, BP Gila, CR Abernathy, SJ Pearton
Applied physics letters 84 (7), 1123-1125, 2004
1002004
Effect of external strain on the conductivity of AlGaN/GaN high electron mobility transistors
BS Kang, S Kim, JH Kim, F Ren, K Baik, SJ Pearton, BP Gila, ...
State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and …, 2003
972003
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