| Magnetic properties of n-GaMnN thin films GT Thaler, ME Overberg, B Gila, R Frazier, CR Abernathy, SJ Pearton, ... Applied Physics Letters 80 (21), 3964-3966, 2002 | 429 | 2002 |
| GaN-based diodes and transistors for chemical, gas, biological and pressure sensing SJ Pearton, BS Kang, S Kim, F Ren, BP Gila, CR Abernathy, J Lin, ... Journal of Physics: Condensed Matter 16 (29), R961, 2004 | 371 | 2004 |
| Rectification at graphene-semiconductor interfaces: zero-gap semiconductor-based diodes S Tongay, M Lemaitre, X Miao, B Gila, BR Appleton, AF Hebard Physical Review X 2 (1), 011002, 2012 | 307 | 2012 |
| Electrical transport properties of single ZnO nanorods YW Heo, LC Tien, DP Norton, BS Kang, F Ren, BP Gila, SJ Pearton Applied Physics Letters 85 (11), 2002-2004, 2004 | 207 | 2004 |
| Electrical transport properties of single ZnO nanorods YW Heo, LC Tien, DP Norton, BS Kang, F Ren, BP Gila, SJ Pearton Applied Physics Letters 85 (11), 2002-2004, 2004 | 207 | 2004 |
| Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors B Luo, JW Johnson, J Kim, RM Mehandru, F Ren, BP Gila, AH Onstine, ... Applied physics letters 80 (9), 1661-1663, 2002 | 207 | 2002 |
| Reliability studies of AlGaN/GaN high electron mobility transistors DJ Cheney, EA Douglas, L Liu, CF Lo, YY Xi, BP Gila, F Ren, D Horton, ... SEMICONDUCTOR SCIENCE AND TECHNOLOGY 28 (7), 2013 | 178* | 2013 |
| Pressure-induced changes in the conductivity of AlGaN∕ GaN high-electron mobility-transistor membranes BS Kang, S Kim, F Ren, JW Johnson, RJ Therrien, P Rajagopal, ... Applied physics letters 85 (14), 2962-2964, 2004 | 153 | 2004 |
| AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using as the gate oxide and surface passivation R Mehandru, B Luo, J Kim, F Ren, BP Gila, AH Onstine, CR Abernathy, ... Applied physics letters 82 (15), 2530-2532, 2003 | 151 | 2003 |
| Gd2O3/GaN metal-oxide-semiconductor field-effect transistor JW Johnson, B Luo, F Ren, BP Gila, W Krishnamoorthy, CR Abernathy, ... Applied Physics Letters 77 (20), 3230-3232, 2000 | 140 | 2000 |
| Solid-State Electron J Kim, B Gila, GY Chung, CR Abernathy, SJ Pearton, F Ren Solid-State Electron. 15 (10), 1121, 1972 | 133* | 1972 |
| MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors Y Irokawa, Y Nakano, M Ishiko, T Kachi, J Kim, F Ren, BP Gila, ... Applied physics letters 84 (15), 2919-2921, 2004 | 131 | 2004 |
| Room temperature hydrogen detection using Pd-coated GaN nanowires W Lim, JS Wright, BP Gila, JL Johnson, A Ural, T Anderson, F Ren, ... Applied Physics Letters 93 (7), 072109, 2008 | 128 | 2008 |
| Hydrogen and ozone gas sensing using multiple ZnO nanorods BS Kang, YW Heo, LC Tien, DP Norton, F Ren, BP Gila, SJ Pearton Applied Physics A 80 (5), 1029-1032, 2005 | 125 | 2005 |
| Characteristics of MgO/GaN gate-controlled metal–oxide–semiconductor diodes J Kim, R Mehandru, B Luo, F Ren, BP Gila, AH Onstine, CR Abernathy, ... Applied physics letters 80 (24), 4555-4557, 2002 | 125 | 2002 |
| Graphene/GaN Schottky diodes: Stability at elevated temperatures S Tongay, M Lemaitre, T Schumann, K Berke, BR Appleton, B Gila, ... Applied Physics Letters 99 (10), 102102, 2011 | 120 | 2011 |
| Gadolinium oxide and scandium oxide: gate dielectrics for GaN MOSFETs BP Gila, JW Johnson, R Mehandru, B Luo, AH Onstine, V Krishnamoorthy, ... physica status solidi (a) 188 (1), 239-242, 2001 | 110 | 2001 |
| GaN electronics for high power, high temperature applications SJ Pearton, F Ren, AP Zhang, G Dang, XA Cao, KP Lee, H Cho, BP Gila, ... Materials Science and Engineering: B 82 (1-3), 227-231, 2001 | 105 | 2001 |
| AlGaN/GaN-based metal–oxide–semiconductor diode-based hydrogen gas sensor BS Kang, F Ren, BP Gila, CR Abernathy, SJ Pearton Applied physics letters 84 (7), 1123-1125, 2004 | 100 | 2004 |
| Effect of external strain on the conductivity of AlGaN/GaN high electron mobility transistors BS Kang, S Kim, JH Kim, F Ren, K Baik, SJ Pearton, BP Gila, ... State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and …, 2003 | 97 | 2003 |
Fan RenUniversity of Florida, Bell Lab, AT&TVerified email at che.ufl.edu
