| Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs AN Tallarico, S Stoffels, P Magnone, N Posthuma, E Sangiorgi, ... IEEE Electron Device Letters 38 (1), 99-102, 2016 | 145 | 2016 |
| PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on and Underlying Degradation Mechanisms AN Tallarico, S Stoffels, N Posthuma, P Magnone, D Marcon, S Decoutere, ... IEEE Transactions on Electron Devices 65 (1), 38-44, 2017 | 87 | 2017 |
| Failure mode for p-GaN gates under forward gate stress with varying Mg concentration S Stoffels, B Bakeroot, TL Wu, D Marcon, NE Posthuma, S Decoutere, ... 2017 IEEE International Reliability Physics Symposium (IRPS), 4B-4.1-4B-4.9, 2017 | 58 | 2017 |
| Threshold voltage instability in GaN HEMTs with p-type gate: Mg doping compensation AN Tallarico, S Stoffels, N Posthuma, S Decoutere, E Sangiorgi, C Fiegna IEEE Electron Device Letters 40 (4), 518-521, 2019 | 53 | 2019 |
| Gate reliability of p-GaN HEMT with gate metal retraction AN Tallarico, S Stoffels, N Posthuma, B Bakeroot, S Decoutere, ... IEEE Transactions on Electron Devices 66 (11), 4829-4835, 2019 | 45 | 2019 |
| Statistical analysis of the impact of anode recess on the electrical characteristics of AlGaN/GaN Schottky diodes with gated edge termination J Hu, S Stoffels, S Lenci, B De Jaeger, N Ronchi, AN Tallarico, ... IEEE Transactions on Electron Devices 63 (9), 3451-3458, 2016 | 45 | 2016 |
| Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests J Hu, S Stoffels, M Zhao, AN Tallarico, I Rossetto, M Meneghini, X Kang, ... IEEE Electron Device Letters 38 (3), 371-374, 2017 | 35 | 2017 |
| Perimeter driven transport in the p-GaN gate as a limiting factor for gate reliability S Stoffels, N Posthuma, S Decoutere, B Bakeroot, AN Tallarico, ... 2019 IEEE International Reliability Physics Symposium (IRPS), 1-10, 2019 | 34 | 2019 |
| Hot-Carrier Degradation in Power LDMOS: Selective LOCOS- Versus STI-Based Architecture AN Tallarico, S Reggiani, R Depetro, AM Torti, G Croce, E Sangiorgi, ... IEEE Journal of the Electron Devices Society 6 (1), 219-226, 2018 | 32 | 2018 |
| Field-and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level I Rossetto, M Meneghini, E Canato, M Barbato, S Stoffels, N Posthuma, ... Microelectronics Reliability 76, 298-303, 2017 | 30 | 2017 |
| Negative bias temperature stress reliability in trench-gated p-channel power MOSFETs AN Tallarico, P Magnone, G Barletta, A Magrì, E Sangiorgi, C Fiegna IEEE Transactions on Device and Materials Reliability 14 (2), 657-663, 2014 | 21 | 2014 |
| Impact of the substrate orientation on CHC reliability in n-FinFETs—Separation of the various contributions AN Tallarico, M Cho, J Franco, R Ritzenthaler, M Togo, N Horiguchi, ... IEEE Transactions on Device and Materials Reliability 14 (1), 52-56, 2013 | 21 | 2013 |
| Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide AN Tallarico, S Reggiani, P Magnone, G Croce, R Depetro, P Gattari, ... Microelectronics Reliability 76, 475-479, 2017 | 19 | 2017 |
| High-temperature time-dependent gate breakdown of p-GaN HEMTs M Millesimo, C Fiegna, N Posthuma, M Borga, B Bakeroot, S Decoutere, ... IEEE Transactions on Electron Devices 68 (11), 5701-5706, 2021 | 16 | 2021 |
| Hot-carrier degradation in power LDMOS: Drain bias dependence and lifetime evaluation AN Tallarico, S Reggiani, R Depetro, S Manzini, AM Torti, G Croce, ... IEEE Transactions on Electron Devices 65 (11), 5195-5198, 2018 | 15 | 2018 |
| TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs AN Tallarico, M Millesimo, B Bakeroot, M Borga, N Posthuma, ... IEEE Transactions on Electron Devices 69 (2), 507-513, 2021 | 14 | 2021 |
| ON-state degradation in AlGaN/GaN-on-silicon Schottky barrier diodes: Investigation of the geometry dependence AN Tallarico, P Magnone, S Stoffels, S Lenci, J Hu, D Marcon, E Sangiorgi, ... IEEE Transactions on Electron Devices 63 (9), 3479-3486, 2016 | 13 | 2016 |
| Understanding the degradation sources under ON-state stress in AlGaN/GaN-on-Si SBD: Investigation of the anode-cathode spacing length dependence AN Tallarico, P Magnone, S Stoffels, S Lenci, J Hu, D Marcon, E Sangiorgi, ... 2016 IEEE International Reliability Physics Symposium (IRPS), 4A-5-1-4A-5-6, 2016 | 11 | 2016 |
| Reliability of Au-free AlGaN/GaN-on-silicon Schottky barrier diodes under ON-state stress AN Tallarico, S Stoffels, P Magnone, J Hu, S Lenci, D Marcon, E Sangiorgi, ... IEEE Transactions on Electron Devices 63 (2), 723-730, 2016 | 11 | 2016 |
| Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate AN Tallarico, NE Posthuma, B Bakeroot, S Decoutere, E Sangiorgi, ... Microelectronics Reliability 114, 113872, 2020 | 10 | 2020 |
