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Simone Lavizzari
Simone Lavizzari
Email verificata su sony.com
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Physical interpretation, modeling and impact on phase change memory (PCM) reliability of resistance drift due to chalcogenide structural relaxation
D Ielmini, S Lavizzari, D Sharma, AL Lacaita
2007 IEEE International Electron Devices Meeting, 939-942, 2007
1982007
Reliability impact of chalcogenide-structure relaxation in phase-change memory (PCM) cells—Part I: Experimental study
D Ielmini, D Sharma, S Lavizzari, AL Lacaita
IEEE Transactions on Electron Devices 56 (5), 1070-1077, 2009
1912009
Vertical Ferroelectric HfO2 FET based on 3-D NAND Architecture: Towards Dense Low-Power Memory
K Florent, M Pesic, A Subirats, K Banerjee, S Lavizzari, A Arreghini, ...
2018 IEEE International Electron Devices Meeting (IEDM), 2.5. 1-2.5. 4, 2018
1332018
Temperature acceleration of structural relaxation in amorphous Ge2Sb2Te5
D Ielmini, S Lavizzari, D Sharma, AL Lacaita
Applied Physics Letters 92 (19), 2008
1072008
Statistics of resistance drift due to structural relaxation in phase-change memory arrays
M Boniardi, D Ielmini, S Lavizzari, AL Lacaita, A Redaelli, A Pirovano
IEEE Transactions on Electron Devices 57 (10), 2690-2696, 2010
1062010
Understanding ferroelectric Al: HfO2 thin films with Si-based electrodes for 3D applications
K Florent, S Lavizzari, M Popovici, L Di Piazza, U Celano, G Groeseneken, ...
Journal of Applied Physics 121 (20), 2017
832017
Reliability impact of chalcogenide-structure relaxation in phase-change memory (PCM) cells—Part II: Physics-based modeling
S Lavizzari, D Ielmini, D Sharma, AL Lacaita
IEEE Transactions on Electron Devices 56 (5), 1078-1085, 2009
762009
First demonstration of vertically stacked ferroelectric Al doped HfO2devices for NAND applications
K Florent, S Lavizzari, L Di Piazza, M Popovici, E Vecchio, G Potoms, ...
2017 Symposium on VLSI Technology, T158-T159, 2017
732017
Reliability Study of Ferroelectric Al:HfO2Thin Films for DRAM and NAND Applications
K Florent, S Lavizzari, L Di Piazza, M Popovici, J Duan, G Groeseneken, ...
IEEE Transactions on Electron Devices 64 (10), 4091-4098, 2017
722017
Distributed-Poole-Frenkel modeling of anomalous resistance scaling and fluctuations in phase-change memory (PCM) devices
D Fugazza, D Ielmini, S Lavizzari, AL Lacaita
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
612009
Physical mechanism and temperature acceleration of relaxation effects in phase-change memory cells
D Ielmini, D Sharma, S Lavizzari, AL Lacaita
2008 IEEE International Reliability Physics Symposium, 597-603, 2008
422008
Investigation of the endurance of FE-HfO2 devices by means of TDDB studies
K Florent, A Subirats, S Lavizzari, R Degraeve, U Celano, B Kaczer, ...
2018 IEEE International Reliability Physics Symposium (IRPS), 6D. 3-1-6D. 3-7, 2018
362018
Threshold-Switching Delay Controlled by Current Fluctuations in Phase-Change Memory Devices
S Lavizzari, D Sharma, D Ielmini
IEEE transactions on electron devices 57 (5), 1047-1054, 2010
352010
Transient effects of delay, switching and recovery in phase change memory (PCM) devices
S Lavizzari, D Ielmini, D Sharma, AL Lacaita
2008 IEEE International Electron Devices Meeting, 1-4, 2008
322008
Interface engineering for thermal disturb immune phase change memory technology
A Redaelli, M Boniardi, A Ghetti, U Russo, C Cupeta, S Lavizzari, ...
2013 IEEE International Electron Devices Meeting, 30.4. 1-30.4. 4, 2013
302013
Transient simulation of delay and switching effects in phase-change memories
S Lavizzari, D Ielmini, AL Lacaita
IEEE Transactions on Electron Devices 57 (12), 3257-3264, 2010
302010
A new transient model for recovery and relaxation oscillations in phase-change memories
S Lavizzari, D Ielmini, AL Lacaita
IEEE transactions on electron devices 57 (8), 1838-1845, 2010
282010
Random telegraph signal noise in phase change memory devices
D Fugazza, D Ielmini, S Lavizzari, AL Lacaita
2010 IEEE International Reliability Physics Symposium, 743-749, 2010
282010
Vertical ferroelectric HfO
K Florent, M Pesic, A Subirats, K Banerjee, S Lavizzari, A Arreghini
IEDM Tech. Dig 2, 1-2.5, 2017
272017
Memory cells and integrated devices
A Redaelli, U Russo, A Pirovano, S Lavizzari
US Patent 8,723,155, 2014
272014
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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