Wayne Johnson
Wayne Johnson
Email verificata su iqep.com
Citata da
Citata da
12 W/mm AlGaN-GaN HFETs on silicon substrates
JW Johnson, EL Piner, A Vescan, R Therrien, P Rajagopal, JC Roberts, ...
IEEE Electron Device Letters 25 (7), 459-461, 2004
Reduced Abundance of Immature Ixodes dammini (Acari: Ixodidae) Following Elimination of Deer
ML Wilson, SR Telford III, J Piesman, A Spielman
Journal of medical entomology 25 (4), 224-228, 1988
Influence of MgO and passivation on AlGaN/GaN high-electron-mobility transistors
B Luo, JW Johnson, J Kim, RM Mehandru, F Ren, BP Gila, AH Onstine, ...
Applied Physics Letters 80 (9), 1661-1663, 2002
On the shape and size of the fracture zones on glass fracture surfaces
JW Johnson, DG Holloway
The Philosophical Magazine: A Journal of Theoretical Experimental and…, 1966
Enzymatic glucose detection using ZnO nanorods on the gate region of high electron mobility transistors
BS Kang, HT Wang, F Ren, SJ Pearton, TE Morey, DM Dennis, ...
Applied Physics Letters 91 (25), 252103, 2007
Gallium nitride material devices including an electrode-defining layer and methods of forming the same
JW Johnson, RJ Therrien, A Vescan, JD Brown
US Patent 7,071,498, 2006
Pressure-induced changes in the conductivity of high-electron mobility-transistor membranes
BS Kang, S Kim, F Ren, JW Johnson, RJ Therrien, P Rajagopal, ...
Applied Physics Letters 85 (14), 2962-2964, 2004
metal-oxide-semiconductor field-effect transistor
JW Johnson, B Luo, F Ren, BP Gila, W Krishnamoorthy, CR Abernathy, ...
Applied Physics Letters 77 (20), 3230-3232, 2000
Electrical detection of deoxyribonucleic acid hybridization with high electron mobility transistors
BS Kang, SJ Pearton, JJ Chen, F Ren, JW Johnson, RJ Therrien, ...
Applied Physics Letters 89 (12), 122102, 2006
1.9-kV AlGaN/GaN lateral Schottky barrier diodes on silicon
M Zhu, B Song, M Qi, Z Hu, K Nomoto, X Yan, Y Cao, W Johnson, E Kohn, ...
IEEE Electron Device Letters 36 (4), 375-377, 2015
DC and RF performance of proton-irradiated AlGaN/GaN high electron mobility transistors
B Luo, JW Johnson, F Ren, KK Allums, CR Abernathy, SJ Pearton, ...
Applied Physics Letters 79 (14), 2196-2198, 2001
Prostate specific antigen detection using high electron mobility transistors
BS Kang, HT Wang, TP Lele, Y Tseng, F Ren, SJ Pearton, JW Johnson, ...
Applied physics letters 91 (11), 112106, 2007
Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers
JW Johnson, AP Zhang, WB Luo, F Ren, SJ Pearton, SS Park, YJ Park, ...
IEEE Transactions on Electron devices 49 (1), 32-36, 2002
Reliability of large periphery GaN-on-Si HFETs
S Singhal, T Li, A Chaudhari, AW Hanson, R Therrien, JW Johnson, ...
Microelectronics Reliability 46 (8), 1247-1253, 2006
Gadolinium oxide and scandium oxide: gate dielectrics for GaN MOSFETs
BP Gila, JW Johnson, R Mehandru, B Luo, AH Onstine, V Krishnamoorthy, ...
physica status solidi (a) 188 (1), 239-242, 2001
Lateral power rectifiers with 9.7 kV reverse breakdown voltage
AP Zhang, JW Johnson, F Ren, J Han, AY Polyakov, NB Smirnov, ...
Applied Physics Letters 78 (6), 823-825, 2001
GaN electronics for high power, high temperature applications
SJ Pearton, F Ren, AP Zhang, G Dang, XA Cao, KP Lee, H Cho, BP Gila, ...
Materials Science and Engineering: B 82 (1-3), 227-231, 2001
210-GHz InAlN/GaN HEMTs with dielectric-free passivation
R Wang, G Li, O Laboutin, Y Cao, W Johnson, G Snider, P Fay, D Jena, ...
IEEE electron device letters 32 (7), 892-894, 2011
Influence of γ-rays on dc performance of AlGaN/GaN high electron mobility transistors
B Luo, JW Johnson, F Ren, KK Allums, CR Abernathy, SJ Pearton, ...
Applied physics letters 80 (4), 604-606, 2002
Semiconductor device-based sensors
JW Johnson, EL Piner, KJ Linthicum
US Patent 7,361,946, 2008
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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