H Aruni Fonseka
H Aruni Fonseka
Department of Physics, University of Warwick
Verified email at warwick.ac.uk
Cited by
Cited by
Nanowires grown on InP (100): growth directions, facets, crystal structures, and relative yield control
HA Fonseka, P Caroff, J Wong-Leung, AS Ameruddin, HH Tan, ...
ACS nano 8 (7), 6945-6954, 2014
Polarized light absorption in wurtzite InP nanowire ensembles
M De Luca, A Zilli, HA Fonseka, S Mokkapati, A Miriametro, HH Tan, ...
Nano Letters 15 (2), 998-1005, 2015
Bandgap energy of wurtzite InAs nanowires
MB Rota, AS Ameruddin, HA Fonseka, Q Gao, F Mura, A Polimeni, ...
Nano Letters 16 (8), 5197-5203, 2016
InxGa1− xAs nanowires with uniform composition, pure wurtzite crystal phase and taper-free morphology
AS Ameruddin, HA Fonseka, P Caroff, J Wong-Leung, RLMO het Veld, ...
Nanotechnology 26 (20), 205604, 2015
Temperature dependence of interband transitions in wurtzite InP nanowires
A Zilli, M De Luca, D Tedeschi, HA Fonseka, A Miriametro, HH Tan, ...
ACS nano 9 (4), 4277-4287, 2015
Long-lived hot carriers in III–V nanowires
D Tedeschi, M De Luca, HA Fonseka, Q Gao, F Mura, HH Tan, S Rubini, ...
Nano Letters 16 (5), 3085-3093, 2016
High vertical yield InP nanowire growth on Si (111) using a thin buffer layer
HA Fonseka, HH Tan, J Wong-Leung, JH Kang, P Parkinson, C Jagadish
Nanotechnology 24 (46), 465602, 2013
Magneto-optical properties of wurtzite-phase InP nanowires
M De Luca, A Polimeni, HA Fonseka, AJ Meaney, PCM Christianen, ...
Nano letters 14 (8), 4250-4256, 2014
Growth of pure zinc-blende GaAs (P) core–shell nanowires with highly regular morphology
Y Zhang, HA Fonseka, M Aagesen, JA Gott, AM Sanchez, J Wu, D Kim, ...
Nano Letters 17 (8), 4946-4950, 2017
Stable defects in semiconductor nanowires
AM Sanchez, JA Gott, HA Fonseka, Y Zhang, H Liu, R Beanland
Nano letters 18 (5), 3081-3087, 2018
Growth and Fabrication of High‐Quality Single Nanowire Devices with Radial p‐i‐n Junctions
Y Zhang, AM Sanchez, M Aagesen, S Huo, HA Fonseka, JA Gott, D Kim, ...
Small 15 (3), 1803684, 2019
Highly Strained III–V–V Coaxial Nanowire Quantum Wells with Strong Carrier Confinement
Y Zhang, G Davis, HA Fonseka, A Velichko, A Gustafsson, T Godde, ...
ACS nano, 2019
Self-formed quantum wires and dots in GaAsP–GaAsP core–shell nanowires
HA Fonseka, AV Velichko, Y Zhang, JA Gott, GD Davis, R Beanland, H Liu, ...
Nano letters 19 (6), 4158-4165, 2019
InP–In x Ga 1− x As core-multi-shell nanowire quantum wells with tunable emission in the 1.3–1.55 μm wavelength range
HA Fonseka, AS Ameruddin, P Caroff, D Tedeschi, M De Luca, F Mura, ...
Nanoscale 9 (36), 13554-13562, 2017
Heterostructure and Q-factor engineering for low-threshold and persistent nanowire lasing
S Skalsky, Y Zhang, JA Alanis, HA Fonseka, AM Sanchez, H Liu, ...
Light: Science & Applications 9 (1), 1-10, 2020
Engineering the Side Facets of Vertical [100] Oriented InP Nanowires for Novel Radial Heterostructures
HA Fonseka, P Caroff, Y Guo, AM Sanchez, HH Tan, C Jagadish
Nanoscale research letters 14 (1), 1-10, 2019
Hybrid III–V/IV nanowires: high-quality Ge shell epitaxy on GaAs cores
H Zeng, X Yu, HA Fonseka, JA Gott, M Tang, Y Zhang, G Boras, J Xu, ...
Nano Letters 18 (10), 6397-6403, 2018
Defect Dynamics in Self-Catalyzed III–V Semiconductor Nanowires
JA Gott, R Beanland, HA Fonseka, JJP Peters, Y Zhang, H Liu, ...
Nano letters 19 (7), 4574-4580, 2019
Growth and Characterisation of InP Nanowires and Nanowire-Based Heterostructures for Future Optoelectronic Device Applications
HA Fonseka
The Australian National University, 2015
Growth of InP nanowires on silicon using a thin buffer layer
HA Fonseka, HH Tan, JH Kang, S Paiman, Q Gao, P Parkinson, ...
COMMAD 2012, 43-44, 2012
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