John F. Conley, Jr.
John F. Conley, Jr.
Professor of Electrical Engineering and Computer Science, Oregon State University
Email verificata su eecs.oregonstate.edu - Home page
Titolo
Citata da
Citata da
Anno
What Can Electron Paramagnetic Resonance Tell Us About the Si/SiO2 System?
PM LENAHAN, JF CONLEY
Journal of Vacuum Science & Technology B 16 (4), 2134 - 2153, 1998
3431998
Atomic layer deposition of oxide film
J Conley, Y Ono, R Solanki
US Patent App. 10/376,774, 2004
2702004
Method for depositing a nanolaminate film by atomic layer deposition
JF Conley Jr, Y Ono, R Solanki
US Patent 6,930,059, 2005
2592005
Modulated temperature method of atomic layer deposition (ALD) of high dielectric constant film
J Conley, O John F., S Yoshi, G M.
US Patent 7,442,415, 2014
221*2014
Modulated temperature method of atomic layer deposition (ALD) of high dielectric constant films
JF Conley Jr, Y Ono, GM Stecker
US Patent 7,442,415, 2008
2212008
Nanolaminate film atomic layer deposition method
JF Conley Jr, Y Ono, R Solanki
US Patent 7,053,009, 2006
2122006
Method to perform selective atomic layer deposition of zinc oxide
JF Conley Jr, Y Ono, DR Evans
US Patent 7,160,819, 2007
2072007
Instabilities in amorphous oxide semiconductor thin-film transistors
JF Conley
IEEE Transactions on Device and materials reliability 10 (4), 460-475, 2010
1972010
Method to control the interfacial layer for deposition of high dielectric constant films
JF Conley Jr, Y Ono
US Patent 6,875,677, 2005
1972005
Dielectrophoretically controlled fabrication of single-crystal nickel silicide nanowire interconnects
L Dong, J Bush, V Chirayos, R Solanki, J Jiao, Y Ono, JF Conley, ...
Nano Letters 5 (10), 2112-2115, 2005
1522005
Advancing MIM electronics: Amorphous metal electrodes
EW Cowell III, N Alimardani, CC Knutson, JF Conley Jr, DA Keszler, ...
Advanced Materials 23 (1), 74-78, 2011
1432011
Electron spin resonance observation of trapped electron centers in atomic-layer-deposited hafnium oxide on Si
AY Kang, PM Lenahan, JF Conley Jr
Applied physics letters 83 (16), 3407-3409, 2003
1232003
Electrochem. and Sol
JF Conley Jr, Y Ono, W Zhuang, DJ Tweet, W Gao, SK Mohammed, ...
State Lett 5 (5), C57, 2002
111*2002
Directed assembly of ZnO nanowires on a Si substrate without a metal catalyst using a patterned ZnO seed layer
JF Conley Jr, L Stecker, Y Ono
Nanotechnology 16 (2), 292, 2005
1072005
ZnO-nanoparticle-coated carbon nanotubes demonstrating enhanced electron field-emission properties
JM Green, L Dong, T Gutu, J Jiao, JF Conley Jr, Y Ono
Journal of Applied Physics 99 (9), 094308, 2006
1052006
Room temperature reactions involving silicon dangling bond centers and molecular hydrogen in amorphous SiO2 thin films on silicon
JF Conley, PM Lenahan
Applied physics letters 62 (1), 40-42, 1993
1001993
Room temperature reactions involving Si dangling bond centers and molecular hydrogen in amorphous SiO 2 on Si
JF Conley, PM Lenahan
Appl. Phys. Lett 62, 40, 1993
1001993
Atomic layer deposition of thin hafnium oxide films using a carbon free precursor
JF Conley Jr, Y Ono, DJ Tweet, W Zhuang, R Solanki
Journal of applied physics 93 (1), 712-718, 2003
992003
Atomic layer deposition of nanolaminate film
J Conley, Y Ono, R Solanki
US Patent App. 10/376,794, 2004
982004
Electron spin resonance evidence that E'/sub/spl gamma//centers can behave as switching oxide traps
JF Conley, PM Lenahan, AJ Lelis, TR Oldham
IEEE Transactions on Nuclear Science 42 (6), 1744-1749, 1995
981995
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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