| Optical study of high-biased AlGaN/GaN high-electron-mobility transistors N Shigekawa, K Shiojima, T Suemitsu Journal of applied physics 92 (1), 531-535, 2002 | 99 | 2002 |
| Electroluminescence of InAlAs/InGaAs HEMTs lattice-matched to InP substrates N Shigekawa, T Enoki, T Furuta, H Ito IEEE Electron Device Letters 16 (11), 515-517, 1995 | 78 | 1995 |
| Current–voltage and spectral-response characteristics of surface-activated-bonding-based InGaP/GaAs/Si hybrid triple-junction cells N Shigekawa, J Liang, R Onitsuka, T Agui, H Juso, T Takamoto Japanese Journal of Applied Physics 54 (8S1), 08KE03, 2015 | 77 | 2015 |
| Realization of direct bonding of single crystal diamond and Si substrates J Liang, S Masuya, M Kasu, N Shigekawa Applied Physics Letters 110 (11), 2017 | 76 | 2017 |
| Measurement of valence-band offsets of InAlN/GaN heterostructures grown by metal-organic vapor phase epitaxy M Akazawa, B Gao, T Hashizume, M Hiroki, S Yamahata, N Shigekawa Journal of Applied Physics 109 (1), 2011 | 73 | 2011 |
| Electroluminescence characterization of AlGaN/GaN high-electron-mobility transistors N Shigekawa, K Shiojima, T Suemitsu Applied Physics Letters 79 (8), 1196-1198, 2001 | 72 | 2001 |
| Ultrahigh-speed InP/InGaAs DHPTs for OEMMICs H Kamitsuna, Y Matsuoka, S Yamahata, N Shigekawa IEEE Transactions on microwave theory and techniques 49 (10), 1921-1925, 2001 | 71 | 2001 |
| Electrical properties of p-Si/n-GaAs heterojunctions by using surface-activated bonding J Liang, T Miyazaki, M Morimoto, S Nishida, N Watanabe, N Shigekawa Applied Physics Express 6 (2), 021801, 2013 | 70 | 2013 |
| Effects of thermal annealing process on the electrical properties of p+-Si/n-SiC heterojunctions J Liang, S Nishida, M Arai, N Shigekawa Applied Physics Letters 104 (16), 2014 | 64 | 2014 |
| Investigation on the interface resistance of Si/GaAs heterojunctions fabricated by surface-activated bonding J Liang, L Chai, S Nishida, M Morimoto, N Shigekawa Japanese Journal of Applied Physics 54 (3), 030211, 2015 | 56 | 2015 |
| Electrical properties of Si/Si interfaces by using surface-activated bonding J Liang, T Miyazaki, M Morimoto, S Nishida, N Shigekawa Journal of Applied Physics 114 (18), 2013 | 56 | 2013 |
| Small valence-band offset of In0. 17Al0. 83N/GaN heterostructure grown by metal-organic vapor phase epitaxy M Akazawa, T Matsuyama, T Hashizume, M Hiroki, S Yamahata, ... Applied Physics Letters 96 (13), 2010 | 56 | 2010 |
| Inverted InAlAs/InGaAs avalanche photodiode with low–high–low electric field profile M Nada, Y Muramoto, H Yokoyama, N Shigekawa, T Ishibashi, S Kodama Japanese Journal of Applied Physics 51 (2S), 02BG03, 2012 | 50 | 2012 |
| Fabrication of GaN/diamond heterointerface and interfacial chemical bonding state for highly efficient device design J Liang, A Kobayashi, Y Shimizu, Y Ohno, SW Kim, K Koyama, M Kasu, ... Advanced Materials 33 (43), 2104564, 2021 | 48 | 2021 |
| Effects of annealing on electrical properties of Si/Si junctions by surface-activated bonding M Morimoto, J Liang, S Nishida, N Shigekawa Japanese Journal of Applied Physics 54 (3), 030212, 2015 | 46 | 2015 |
| Time‐of‐flight measurement of electron velocity in an In0.52Al0.48As/In0.53Ga0.47As /In0.52Al0.48As double heterostructure N Shigekawa, T Furuta, K Arai Applied physics letters 57 (1), 67-69, 1990 | 45 | 1990 |
| Stability of diamond/Si bonding interface during device fabrication process J Liang, S Masuya, S Kim, T Oishi, M Kasu, N Shigekawa Applied Physics Express 12 (1), 016501, 2018 | 43 | 2018 |
| Barrier thickness dependence of photovoltaic characteristics of InGaN/GaN multiple quantum well solar cells N Watanabe, H Yokoyama, N Shigekawa, K Sugita, A Yamamoto Japanese Journal of Applied Physics 51 (10S), 10ND10, 2012 | 41 | 2012 |
| Annealing effect of surface-activated bonded diamond/Si interface J Liang, Y Zhou, S Masuya, F Gucmann, M Singh, J Pomeroy, S Kim, ... Diamond and Related Materials 93, 187-192, 2019 | 38 | 2019 |
| High-energy and recombination-induced electroluminescence of InAlAs/InGaAs HEMT's lattice-matched to InP substrates N Shigekawa, T Enoki, T Furuta, H Ito IEEE Transactions on Electron Devices 44 (4), 513-519, 1997 | 38 | 1997 |
Tetsuya SuemitsuTohoku UniversityVerified email at tohoku.ac.jp
