| 282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates P Dong, J Yan, J Wang, Y Zhang, C Geng, T Wei, P Cong, Y Zhang, ... Applied Physics Letters 102 (24), 2013 | 253 | 2013 |
| Graphene-based transparent conductive electrodes for GaN-based light emitting diodes: Challenges and countermeasures L Wang, W Liu, Y Zhang, ZH Zhang, ST Tan, X Yi, G Wang, X Sun, H Zhu, ... Nano Energy 12, 419-436, 2015 | 102 | 2015 |
| Advances in III‐nitride semiconductor microdisk lasers Y Zhang, X Zhang, KH Li, YF Cheung, C Feng, HW Choi Physica Status Solidi (a) 212 (5), 960-973, 2015 | 54 | 2015 |
| Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well H Li, P Li, J Kang, Z Li, Y Zhang, Z Li, J Li, X Yi, J Li, G Wang Applied Physics Express 6 (5), 052102, 2013 | 53 | 2013 |
| nBn extended short-wavelength infrared focal plane array Arash Dehzangi, Abbas Haddadi, Romain Chevallier, Yiyun Zhang, and Manijeh ... Optics Letters 43 (3), 591-594, 2018 | 52 | 2018 |
| Light extraction efficiency improvement by multiple laser stealth dicing in InGaN-based blue light-emitting diodes Y Zhang, H Xie, H Zheng, T Wei, H Yang, J Li, X Yi, X Song, G Wang, J Li Optics Express 20 (6), 6808-6815, 2012 | 50 | 2012 |
| Optically pumped whispering-gallery mode lasing from 2-μm GaN micro-disks pivoted on Si Y Zhang, Z Ma, X Zhang, T Wang, HW Choi Applied Physics Letters 104 (22), 2014 | 46 | 2014 |
| Annealed InGaN green light-emitting diodes with graphene transparent conductive electrodes Y Zhang, L Wang, X Li, X Yi, N Zhang, J Li, H Zhu, G Wang Journal of Applied Physics 111 (11), 2012 | 43 | 2012 |
| Enhanced light emission of GaN-based diodes with a NiOx/graphene hybrid electrode Y Zhang, X Li, L Wang, X Yi, D Wu, H Zhu, G Wang Nanoscale 4 (19), 5852-5855, 2012 | 43 | 2012 |
| Very high external quantum efficiency and wall-plug efficiency 527 nm InGaN green LEDs by MOCVD P. P. Li, Y. B. Zhao, H. J. Li, J. M. Che, Z.-H. Zhang, Z. C. Li, Y. Y ... Optics Express 26 (25), 33108-33115, 2018 | 41 | 2018 |
| High quantum efficiency mid-wavelength infrared type-II InAs/InAs1−xSbx superlattice photodiodes grown by metal-organic chemical vapor deposition Donghai Wu, Quentin Durlin, Arash Dehzangi, Yiyun Zhang, and Manijeh Razeghi Applied Physics Letters 114 (011104), 2019 | 40 | 2019 |
| Antimonite-based gap-engineered type-II superlattice materials grown by MBE and MOCVD for the third generation of infrared imagers M Razeghi, A Dehzangi, D Wu, R McClintock, Y Zhang, Q Durlin, J Li, ... Infrared Technology and Applications XLV 11002, 108-125, 2019 | 35 | 2019 |
| Demonstration of long wavelength infrared type-II InAs/InAs1-xSbx superlattices photodiodes on GaSb substrate grown by metalorganic chemical vapor deposition DH Wu, A Dehzangi, YY Zhang, M Razeghi Applied Physics Letters 112 (24), 2018 | 35 | 2018 |
| Partially sandwiched graphene as transparent conductive layer for InGaN-based vertical light emitting diodes L Wang, Y Zhang, X Li, Z Liu, E Guo, X Yi, J Wang, H Zhu, G Wang Applied Physics Letters 101 (6), 2012 | 32 | 2012 |
| Thin-film Antimonide-based Photodetectors Integrated on Si Yiyun Zhang, Abbas Haddadi, Romain Chevallier, Arash Dehzangi, Manijeh Razeghi IEEE Journal of Quantum Electronics 54 (2), 1-7, 2018 | 31 | 2018 |
| Whispering-gallery mode lasing from optically free-standing InGaN microdisks X Zhang, YF Cheung, Y Zhang, HW Choi Optics Letters 39 (19), 5614-5617, 2014 | 31 | 2014 |
| Effects of light extraction efficiency to the efficiency droop of InGaN-based light-emitting diodes Y Zhang, H Zheng, E Guo, Y Cheng, J Ma, L Wang, Z Liu, X Yi, G Wang, ... Journal of Applied Physics 113 (1), 2013 | 29 | 2013 |
| Interface and transport properties of GaN/graphene junction in GaN-based LEDs L Wang, Y Zhang, X Li, Z Liu, E Guo, X Yi, J Wang, H Zhu, G Wang Journal of Physics D: Applied Physics 45 (50), 505102, 2012 | 29 | 2012 |
| Analysis model for efficiency droop of InGaN light-emitting diodes based on reduced effective volume of active region by carrier localization H Li, P Li, J Kang, Z Li, Y Zhang, M Liang, Z Li, J Li, X Yi, G Wang Applied Physics Express 6 (9), 092101, 2013 | 27 | 2013 |
| Improved transport properties of graphene/GaN junctions in GaN-based vertical light emitting diodes by acid doping L Wang, Y Zhang, X Li, E Guo, Z Liu, X Yi, H Zhu, G Wang RSC Advances 3 (10), 3359-3364, 2013 | 27 | 2013 |
Liancheng WangCollege of Mechanical and Electrical Engineering, Central South University, Changsha Hunan, ChinaEmail verificata su semi.ac.cn
