Band-structure engineering for low-threshold high-efficiency semiconductor lasers AR Adams
Electronics Letters 22 (5), 249-250, 1986
693 1986 The temperature dependence of the efficiency and threshold current of In1-xGaxAsyP1-y lasers related to intervalence band absorption AR Adams, M Asada, Y Suematsu, S Arai
Japanese Journal of Applied Physics 19 (10), L621, 1980
272 1980 Band-structure engineering in strained semiconductor lasers EP O'Reilly, AR Adams
IEEE Journal of Quantum electronics 30 (2), 366-379, 1994
231 1994 The temperature dependence of 1.3-and 1.5-/spl mu/m compressively strained InGaAs (P) MQW semiconductor lasers AF Phillips, SJ Sweeney, AR Adams, PJA Thijs
IEEE Journal of selected topics in quantum electronics 5 (3), 401-412, 1999
229 1999 A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-/spl mu/m GaInNAs-based quantum-well lasers R Fehse, S Tomic, AR Adams, SJ Sweeney, EP O'Reilly, A Andreev, ...
IEEE Journal of selected topics in quantum electronics 8 (4), 801-810, 2002
190 2002 The temperature dependence of the threshold current of GaInAsP/InP DH lasers M Asada, A Adams, K Stubkjaer, Y Suematsu, Y Itaya, S Arai
IEEE Journal of Quantum Electronics 17 (5), 611-619, 1981
165 1981 Handbook of semiconductor lasers and photonic integrated circuits Y Suematsu, AR Adams
Chapman and Hall, 1994
162 1994 Theoretical and experimental analysis of 1.3-μm InGaAsN/GaAs lasers S Tomic, EP O'Reilly, R Fehse, SJ Sweeney, AR Adams, AD Andreev, ...
IEEE Journal of selected topics in quantum electronics 9 (5), 1228-1238, 2003
161 2003 The effect of temperature dependent processes on the performance of 1.5-μm compressively strained InGaAs (P) MQW semiconductor diode lasers SJ Sweeney, AF Phillips, AR Adams, EP O'reilly, PJA Thijs
IEEE Photonics Technology Letters 10 (8), 1076-1078, 1998
123 1998 Carrier transport and recombination in IP Marko, NF Masse, SJ Sweeney, AD Andreev, AR Adams, N Hatori, ...
Applied Physics Letters 87 (21), 211114, 2005
100 2005 The kp interaction in InP and GaAs from the band-gap dependence of the effective mass LG Shantharama, AR Adams, CN Ahmad, RJ Nicholas
Journal of Physics C: Solid State Physics 17 (25), 4429, 1984
89 1984 Improved performance due to suppression of spontaneous emission in tensile-strain semiconductor lasers EP O'reilly, G Jones, A Ghiti, AR Adams
Electronics Letters 27 (16), 1417-1419, 1991
88 1991 Electronic structure of N regime from pressure and SA Choulis, TJC Hosea, S Tomić, M Kamal-Saadi, AR Adams, EP O’Reilly, ...
Physical review B 66 (16), 165321, 2002
83 2002 Background carrier concentration and electron mobility in LPE In1−x Gax y 1−y layers PD Greene, SA Wheeler, AR Adams, AN El‐Sabbahy, CN Ahmad
Applied Physics Letters 35 (1), 78-80, 1979
83 1979 Determination of the band structure of disordered AlGaInP and its influence on visible-laser characteristics AT Meney, D Prins, AF Phillips, JL Sly, EP O'Reilly, DJ Dunstan, ...
IEEE Journal of Selected Topics in Quantum Electronics 1 (2), 697-706, 1995
80 1995 InSb1− xNx growth and devices T Ashley, TM Burke, GJ Pryce, AR Adams, A Andreev, BN Murdin, ...
Solid-State Electronics 47 (3), 387-394, 2003
78 2003 Auger recombination in long-wavelength infrared BN Murdin, M Kamal-Saadi, A Lindsay, EP O’Reilly, AR Adams, GJ Nott, ...
Applied Physics Letters 78 (11), 1568-1570, 2001
75 2001 Strained-layer quantum-well lasers AR Adams
IEEE Journal of Selected Topics in Quantum Electronics 17 (5), 1364-1373, 2011
71 2011 The role of Auger recombination in InAs 1.3-μm quantum-dot lasers investigated using high hydrostatic pressure IP Marko, AD Andreev, AR Adams, R Krebs, JP Reithmaier, A Forchel
IEEE Journal of selected topics in quantum electronics 9 (5), 1300-1307, 2003
68 2003 Experimental analysis of temperature dependence in 1.3-/spl mu/m AlGaInAs-InP strained MQW lasers T Higashi, SJ Sweeney, AF Phillips, AR Adams, E O'Reilly, T Uchida, ...
IEEE Journal of selected topics in quantum electronics 5 (3), 413-419, 1999
67 1999 