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Salvatore Lombardo
Salvatore Lombardo
CNR-IMM
Email verificata su imm.cnr.it
Titolo
Citata da
Citata da
Anno
Dielectric breakdown mechanisms in gate oxides
S Lombardo, JH Stathis, BP Linder, KL Pey, F Palumbo, CH Tung
Journal of applied physics 98 (12), 12, 2005
4972005
Crystal grain nucleation in amorphous silicon
C Spinella, S Lombardo, F Priolo
Journal of Applied physics 84 (10), 5383-5414, 1998
4281998
Room‐temperature luminescence from Er‐implanted semi‐insulating polycrystalline silicon
S Lombardo, SU Campisano, GN Van den Hoven, A Cacciato, A Polman
Applied physics letters 63 (14), 1942-1944, 1993
1451993
Silicon planar technology for single-photon optical detectors
E Sciacca, AC Giudice, D Sanfilippo, F Zappa, S Lombardo, R Consentino, ...
IEEE Transactions on Electron Devices 50 (4), 918-925, 2003
1342003
The impact of gate-oxide breakdown on SRAM stability
R Rodriguez, JH Stathis, BP Linder, S Kowalczyk, CT Chuang, RV Joshi, ...
IEEE Electron Device Letters 23 (9), 559-561, 2002
1322002
Erbium in oxygen‐doped silicon: Optical excitation
GN Van den Hoven, JH Shin, A Polman, S Lombardo, SU Campisano
Journal of applied physics 78 (4), 2642-2650, 1995
1201995
Voltage dependence of hard breakdown growth and the reliability implication in thin dielectrics
BP Linder, S Lombardo, JH Stathis, A Vayshenker, DJ Frank
IEEE Electron Device Letters 23 (11), 661-663, 2002
1152002
How far will silicon nanocrystals push the scaling limits of NVMs technologies?
B De Salvo, C Gerardi, S Lombardo, T Baron, L Perniola, D Mariolle, ...
IEEE International Electron Devices Meeting 2003, 26.1. 1-26.1. 4, 2003
1122003
Percolation path and dielectric-breakdown-induced-epitaxy evolution during ultrathin gate dielectric breakdown transient
CH Tung, KL Pey, LJ Tang, MK Radhakrishnan, WH Lin, F Palumbo, ...
Applied Physics Letters 83 (11), 2223-2225, 2003
1052003
Silicon nanocrystal memories
S Lombardo, B De Salvo, C Gerardi, T Baron
Microelectronic Engineering 72 (1-4), 388-394, 2004
1042004
Microscopy study of the conductive filament in HfO2 resistive switching memory devices
S Privitera, G Bersuker, B Butcher, A Kalantarian, S Lombardo, ...
Microelectronic Engineering 109, 75-78, 2013
1022013
Performance and reliability features of advanced nonvolatile memories based on discrete traps (silicon nanocrystals, SONOS)
B De Salvo, C Gerardi, R van Schaijk, SA Lombardo, D Corso, ...
IEEE Transactions on Device and Materials Reliability 4 (3), 377-389, 2004
962004
Degradation and hard breakdown transient of thin gate oxides in capacitors: Dependence on oxide thickness
S Lombardo, A La Magna, C Spinella, C Gerardi, F Crupi
Journal of applied physics 86 (11), 6382-6391, 1999
961999
A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐k, and Layered Dielectrics
F Palumbo, C Wen, S Lombardo, S Pazos, F Aguirre, M Eizenberg, F Hui, ...
Advanced Functional Materials 30 (18), 1900657, 2020
912020
Erbium in oxygen‐doped silicon: Electroluminescence
S Lombardo, SU Campisano, GN Van den Hoven, A Polman
Journal of applied physics 77 (12), 6504-6510, 1995
821995
Growth and scaling of oxide conduction after breakdown
BP Linder, JH Stathis, DJ Frank, S Lombardo, A Vayshenker
2003 IEEE International Reliability Physics Symposium Proceedings, 2003…, 2003
672003
Electrical and thermal transient during dielectric breakdown of thin oxides in metal--silicon capacitors
S Lombardo, F Crupi, A La Magna, C Spinella, A Terrasi, A La Mantia, ...
Journal of applied physics 84 (1), 472-479, 1998
651998
Reduction of fixed charges in atomic layer deposited Al2O3 dielectrics
J Buckley, B De Salvo, D Deleruyelle, M Gely, G Nicotra, S Lombardo, ...
Microelectronic engineering 80, 210-213, 2005
622005
Breakdown transients in ultrathin gate oxides: Transition in the degradation rate
S Lombardo, JH Stathis, BP Linder
Physical review letters 90 (16), 167601, 2003
592003
Dark current in silicon photomultiplier pixels: Data and model
R Pagano, D Corso, S Lombardo, G Valvo, DN Sanfilippo, G Fallica, ...
IEEE transactions on electron devices 59 (9), 2410-2416, 2012
582012
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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