| Demonstration of enhanced continuous-wave operation of blue laser diodes on a semipolar 202¯ 1¯ GaN substrate using indium-tin-oxide/thin-p-GaN cladding layers S Mehari, DA Cohen, DL Becerra, S Nakamura, SP DenBaars Optics Express 26 (2), 1564-1572, 2018 | 37 | 2018 |
| Continuous-wave operation of a semipolar InGaN distributed-feedback blue laser diode with a first-order indium tin oxide surface grating H Zhang, DA Cohen, P Chan, MS Wong, S Mehari, DL Becerra, ... Optics Letters 44 (12), 3106-3109, 2019 | 32 | 2019 |
| Measurement of the Schottky barrier height between Ni-InGaAs alloy and In0. 53Ga0. 47As S Mehari, A Gavrilov, S Cohen, P Shekhter, M Eizenberg, D Ritter Applied Physics Letters 101 (7), 2012 | 29 | 2012 |
| Epitaxial NiInGaAs formed by solid state reaction on In0. 53Ga0. 47As: Structural and chemical study P Shekhter, S Mehari, D Ritter, M Eizenberg Journal of Vacuum Science & Technology B 31 (3), 2013 | 24 | 2013 |
| Electrical injection of a 440nm InGaN laser with lateral confinement by nanoporous-GaN R Anderson, D Cohen, S Mehari, S Nakamura, S DenBaars Optics Express 27 (16), 22764-22769, 2019 | 16 | 2019 |
| Semipolar InGaN blue laser diodes with a low optical loss and a high material gain obtained by suppression of carrier accumulation in the p-waveguide region S Mehari, DA Cohen, DL Becerra, S Nakamura, SP DenBaars Japanese Journal of Applied Physics 58 (2), 020902, 2019 | 15 | 2019 |
| Role of transport during transient phenomena in AlGaN/GaN heterostructure FETs S Mehari, Y Calahorra, A Gavrilov, M Eizenberg, D Ritter IEEE Electron Device Letters 36 (11), 1124-1127, 2015 | 13 | 2015 |
| Oxygen and hydrogen profiles and electrical properties of unintentionally doped gallium nitride grown by hydride vapor phase epitaxy V Garbe, B Abendroth, H Stöcker, A Gavrilov, D Cohen‐Elias, S Mehari, ... Crystal Research and Technology 50 (6), 425-431, 2015 | 13 | 2015 |
| Density of traps at the insulator/III-N interface of GaN heterostructure field-effect transistors obtained by gated Hall measurements S Mehari, A Gavrilov, M Eizenberg, D Ritter IEEE Electron Device Letters 36 (9), 893-895, 2015 | 10 | 2015 |
| Compensation effects of high oxygen levels in semipolar AlGaN electron blocking layers and their mitigation via growth optimization DL Becerra, DA Cohen, S Mehari, SP DenBaars, S Nakamura Journal of Crystal Growth 507, 118-123, 2019 | 9 | 2019 |
| Semipolar III-nitride laser diodes for solid-state lighting S Mehari, DA Cohen, DL Becerra, H Zhang, C Weisbuch, JS Speck, ... Novel In-Plane Semiconductor Lasers XVIII 10939, 45-50, 2019 | 5 | 2019 |
| Semipolar group III-nitride distributed-feedback blue laser diode with Indium tin oxide surface grating H Zhang, DA Cohen, P Chan, MS Wong, S Mehari, S Nakamura, ... Novel In-Plane Semiconductor Lasers XIX 11301, 1130102, 2020 | 4 | 2020 |
| Identification of energy and spatial location of electron traps in algan/gan hfet structures S Mehari, A Gavrilov, M Eizenberg, D Ritter IEEE Transactions on Electron Devices 64 (4), 1642-1646, 2017 | 4 | 2017 |
| Comparison of Simulation and Measurement of Gate Leakage Current in Metal/Al2O3/GaN/AlGaN/AlN/GaN Capacitors SS Mehari, E Yalon, A Gavrilov, D Mistele, G Bahir, M Eizenberg, D Ritter IEEE Transactions on Electron Devices 61 (10), 3558-3561, 2014 | 4 | 2014 |
| The role of barrier transport and traps in the tradeoff between low OFF-state leakage current and improved dynamic stability of AlGaN/GaN HFETs S Mehari, A Gavrilov, M Eizenberg, D Ritter IEEE Transactions on Electron Devices 63 (12), 4702-4706, 2016 | 3 | 2016 |
| Optical Gain and Loss Measurements of Semipolar III-nitride Laser Diodes with ITO/thin-p-GaN Cladding Layers S Mehari, DA Cohen, DL Becerrea, C Weisbuch, S Nakamura, ... 2018 76th Device Research Conference (DRC), 1-2, 2018 | 2 | 2018 |
| Study of the Ni-InGaAs alloy as an ohmic contact to the p-type base of InP/InGaAs HBTs S Mehari, A Gavrilov, S Cohen, D Ritter 2012 International Conference on Indium Phosphide and Related Materials, 200-203, 2012 | 2 | 2012 |
| Corrections to “Density of Traps at the Insulator/III-N Interface of GaN Heterostructure Field-Effect Transistors Obtained by Gated Hall Measurements”[Sep 15 893-895] S Mehari, A Gavrilov, M Eizenberg, D Ritter IEEE Electron Device Letters 38 (10), 1504-1504, 2017 | 1 | 2017 |
| Gated van der Pauw measurements: A powerful tool for probing electron trapping effects in GaN HEMTs S Mehari, A Gavrilov, M Eizenberg, D Ritter 2015 73rd Annual Device Research Conference (DRC), 125-126, 2015 | 1 | 2015 |
| GaN High-Power Lasers for solid-state lighting G Lheureux, S Mehari, D Cohen, P Chan, H Zhang, S Hamdy, C Reilly, ... Optical Devices and Materials for Solar Energy and Solid-state Lighting, PT2C. 1, 2019 | | 2019 |
Dan RitterProfessor of Electrical Engineering, Technion, IsraelVerified email at ee.technion.ac.il
