Maura Pavesi
Maura Pavesi
Dept. of Marhematical, Physical and Computer Sciences - Univ.of Parma ITALY
Email verificata su unipr.it
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Accelerated life test of high brightness light emitting diodes
L Trevisanello, M Meneghini, G Mura, M Vanzi, M Pavesi, G Meneghesso, ...
IEEE Transactions on Device and Materials Reliability 8 (2), 304-311, 2008
1862008
Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes
F Rossi, M Pavesi, M Meneghini, G Salviati, M Manfredi, G Meneghesso, ...
Journal of applied physics 99 (5), 053104, 2006
982006
Optical evidence of an electrothermal degradation of InGaN-based light-emitting diodes during electrical stress
M Pavesi, M Manfredi, G Salviati, N Armani, F Rossi, G Meneghesso, ...
Applied physics letters 84 (17), 3403-3405, 2004
642004
Leakage current and reverse-bias luminescence in InGaN-based light-emitting diodes
M Meneghini, N Trivellin, M Pavesi, M Manfredi, U Zehnder, B Hahn, ...
Applied Physics Letters 95 (17), 173507, 2009
572009
Study of surface treatment effects on the metal-CdZnTe interface
L Marchini, A Zappettini, E Gombia, R Mosca, M Lanata, M Pavesi
IEEE Transactions on Nuclear Science 56 (4), 1823-1826, 2009
552009
Verification of electron distributions in silicon by means of hot carrier luminescence measurements
L Selmi, M Mastrapasqua, DM Boulin, JD Bude, M Pavesi, E Sangiorgi, ...
IEEE Transactions on Electron Devices 45 (4), 802-808, 1998
451998
ε-Ga2O3 epilayers as a material for solar-blind UV photodetectors
M Pavesi, F Fabbri, F Boschi, G Piacentini, A Baraldi, M Bosi, E Gombia, ...
Materials Chemistry and Physics 205, 502-507, 2018
442018
Boron oxide fully encapsulated CdZnTe crystals grown by the vertical Bridgman technique
A Zappettini, M Zha, M Pavesi, L Zanotti
Journal of crystal growth 307 (2), 283-288, 2007
412007
Analysis of hot carrier transport in AlGaAs/InGaAs pseudomorphic HEMTs by means of electroluminescence
G Meneghesso, T Grave, M Manfredi, M Pavesi, C Canali, E Zanoni
IEEE Transactions on Electron Devices 47 (1), 2-10, 2000
412000
Boron oxide encapsulated vertical Bridgman grown CdZnTe crystals as X-ray detector material
A Zappettini, M Zha, L Marchini, D Calestani, R Mosca, E Gombia, ...
2008 IEEE Nuclear Science Symposium Conference Record, 118-121, 2008
392008
Thermal stability of ε-Ga2O3 polymorph
R Fornari, M Pavesi, V Montedoro, D Klimm, F Mezzadri, I Cora, B Pcz, ...
Acta Materialia 140, 411-416, 2017
332017
Effects of channel quantization and temperature on off-state and on-state breakdown in composite channel and conventional InP-based HEMTs
G Meneghesso, A Mion, A Neviani, M Matloubian, J Brown, M Hafizi, T Liu, ...
International Electron Devices Meeting. Technical Digest, 43-46, 1996
321996
Characterization of bulk and surface transport mechanisms by means of the photocurrent technique
M Zanichelli, M Pavesi, A Zappettini, L Marchini, N Auricchio, E Caroli, ...
IEEE Transactions on Nuclear Science 56 (6), 3591-3596, 2009
312009
Diagnosis of trapping phenomena in GaN MESFETs
G Meneghesso, A Chini, E Zanoni, M Manfredi, M Pavesi, B Boudart, ...
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No…, 2000
312000
Charge collection in semi-insulator radiation detectors in the presence of a linear decreasing electric field
M Zanichelli, A Santi, M Pavesi, A Zappettini
Journal of Physics D: Applied Physics 46 (36), 365103, 2013
292013
Growth and characterization of CZT crystals by the Vertical Bridgman method for X-ray detector applications
A Zappettini, L Marchini, M Zha, G Benassi, N Zambelli, D Calestani, ...
IEEE Transactions on Nuclear Science 58 (5), 2352-2356, 2011
292011
Effects of extreme dc-ageing and electron-beam irradiation in InGaN/AlGaN/GaN light-emitting diodes
M Pavesi, F Rossi, E Zanoni
Semiconductor science and technology 21 (2), 138, 2006
292006
Characterization of GaN-based metal–semiconductor field-effect transistors by comparing electroluminescence, photoionization, and cathodoluminescence spectroscopies
N Armani, V Grillo, G Salviati, M Manfredi, M Pavesi, A Chini, ...
Journal of applied physics 92 (5), 2401-2405, 2002
272002
Electron and hole-related luminescence processes in gate injection transistors
M Meneghini, M Scamperle, M Pavesi, M Manfredi, T Ueda, H Ishida, ...
Applied Physics Letters 97 (3), 033506, 2010
262010
Branched gold nanoparticles on ZnO 3D architecture as biomedical SERS sensors
S Picciolini, N Castagnetti, R Vanna, D Mehn, M Bedoni, F Gramatica, ...
RSC advances 5 (113), 93644-93651, 2015
242015
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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