David J. Meyer
Citata da
Citata da
Assessment of GaN surface pretreatment for atomic layer deposited high-k dielectrics
N Nepal, NY Garces, DJ Meyer, JK Hite, MA Mastro, CR Eddy Jr
Applied physics express 4 (5), 055802, 2011
Fully coupled thermoelectromechanical analysis of GaN high electron mobility transistor degradation
MG Ancona, SC Binari, DJ Meyer
Journal of Applied Physics 111 (7), 074504, 2012
GaN/NbN epitaxial semiconductor/superconductor heterostructures
R Yan, G Khalsa, S Vishwanath, Y Han, J Wright, S Rouvimov, DS Katzer, ...
Nature 555 (7695), 183-189, 2018
High electron velocity submicrometer AlN/GaN MOS-HEMTs on freestanding GaN substrates
DJ Meyer, DA Deen, DF Storm, MG Ancona, DS Katzer, R Bass, ...
IEEE electron device letters 34 (2), 199-201, 2013
Atomic layer deposited Ta2O5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors
DA Deen, DF Storm, R Bass, DJ Meyer, DS Katzer, SC Binari, JW Lacis, ...
Applied Physics Letters 98 (2), 023506, 2011
SiNx/InAlN/AlN/GaN MIS-HEMTs With 10.8 THz-V Johnson Figure of Merit
BP Downey, DJ Meyer, DS Katzer, JA Roussos, M Pan, X Gao
Electron Device Letters, IEEE 35 (5), 527-529, 2014
Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates
MT Hardy, BP Downey, N Nepal, DF Storm, DS Katzer, DJ Meyer
Applied Physics Letters 110 (16), 162104, 2017
AlN/GaN HEMTs with high‐κ ALD HfO2 or Ta2O5 gate insulation
D Deen, D Storm, D Meyer, DS Katzer, R Bass, S Binari, T Gougousi
physica status solidi c 8 (7‐8), 2420-2423, 2011
Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy
TA Growden, DF Storm, W Zhang, ER Brown, DJ Meyer, P Fakhimi, ...
Applied Physics Letters 109 (8), 083504, 2016
Epitaxial metallic β-Nb2N films grown by MBE on hexagonal SiC substrates
DS Katzer, N Nepal, DJ Meyer, BP Downey, VD Wheeler, DF Storm, ...
Applied Physics Express 8 (8), 085501, 2015
Dependence of ohmic contact resistance on barrier thickness of AlN/GaN HEMT structures
DA Deen, DF Storm, DS Katzer, DJ Meyer, SC Binari
Solid-State Electronics 54 (6), 613-615, 2010
Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures
TA Growden, W Zhang, ER Brown, DF Storm, DJ Meyer, PR Berger
Light: Science & Applications 7 (2), 17150-17150, 2018
Epitaxial lift-off and transfer of III-N materials and devices from SiC substrates
DJ Meyer, BP Downey, DS Katzer, N Nepal, VD Wheeler, MT Hardy, ...
IEEE Transactions on Semiconductor Manufacturing 29 (4), 384-389, 2016
Large-signal RF performance of nanocrystalline diamond coated AlGaN/GaN high electron mobility transistors
DJ Meyer, TI Feygelson, TJ Anderson, JA Roussos, MJ Tadjer, ...
IEEE Electron Device Letters 35 (10), 1013-1015, 2014
Graded AlGaN channel transistors for improved current and power gain linearity
S Bajaj, Z Yang, F Akyol, PS Park, Y Zhang, AL Price, S Krishnamoorthy, ...
IEEE Transactions on Electron Devices 64 (8), 3114-3119, 2017
Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates
DA Deen, DF Storm, DJ Meyer, R Bass, SC Binari, T Gougousi, KR Evans
Applied Physics Letters 105 (9), 093503, 2014
Structure of 6H silicon carbide/silicon dioxide interface trapping defects
DJ Meyer, NA Bohna, PM Lenahan, AJ Lelis
Applied physics letters 84 (17), 3406-3408, 2004
431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes
TA Growden, W Zhang, ER Brown, DF Storm, K Hansen, P Fakhimi, ...
Applied Physics Letters 112 (3), 033508, 2018
Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates
DF Storm, MT Hardy, DS Katzer, N Nepal, BP Downey, DJ Meyer, ...
Journal of Crystal Growth 456, 121-132, 2016
Observation of trapping defects in –silicon carbide metal-oxide-semiconductor field-effect transistors by spin-dependent recombination
DJ Meyer, PM Lenahan, AJ Lelis
Applied Physics Letters 86 (2), 023503, 2005
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
Articoli 1–20