| Epitaxial growth of silicon doped with carbon and phosphorus using hydrogen carrier gas A Dube, AB Chakravarti, JH Li, R Loesing, DJ Schepis US Patent 8,685,845, 2014 | 414 | 2014 |
| Method to grow thin epitaxial films at low temperature A Dube, H Chung, JY Wang, X Li, YC Huang, SS Chu US Patent 9,929,055, 2018 | 206 | 2018 |
| Low cost flowable dielectric films A Chatterjee, AB Mallick, NK Ingle, B Underwood, KV Thadani, X Chen, ... US Patent 8,889,566, 2014 | 50 | 2014 |
| ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08µm2 SRAM cell K Cheng, A Khakifirooz, P Kulkarni, S Ponoth, B Haran, A Kumar, T Adam, ... 2011 Symposium on VLSI Technology-Digest of Technical Papers, 128-129, 2011 | 45 | 2011 |
| Selective epitaxial Si: P film for nMOSFET application: high phosphorous concentration and high tensile strain X Li, A Dube, Z Ye, S Sharma, Y Kim, S Chu ECS Transactions 64 (6), 959, 2014 | 43 | 2014 |
| Effects of interfacial organic layers on nucleation, growth, and morphological evolution in atomic layer thin film deposition A Dube, M Sharma, PF Ma, PA Ercius, DA Muller, JR Engstrom The Journal of Physical Chemistry C 111 (29), 11045-11058, 2007 | 40 | 2007 |
| Covalent attachment of a transition metal coordination complex to functionalized oligo (phenylene-ethynylene) self-assembled monolayers A Dube, AR Chadeayne, M Sharma, PT Wolczanski, JR Engstrom Journal of the American Chemical Society 127 (41), 14299-14309, 2005 | 38 | 2005 |
| High-performance nMOSFET with in-situ phosphorus-doped embedded Si: C (ISPD eSi: C) source-drain stressor BF Yang, R Takalkar, Z Ren, L Black, A Dube, JW Weijtmans, J Li, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 35 | 2008 |
| Method of modifying epitaxial growth shape on source drain area of transistor Y Kim, X Li, A Dube US Patent 9,530,661, 2016 | 32 | 2016 |
| Cavity-free interface between extension regions and embedded silicon-carbon alloy source/drain regions A Dube, V Ontalus US Patent 8,394,712, 2013 | 30 | 2013 |
| DELTA MONOLAYER DOPANTS EPITAXY FOR EMBEDDED SOURCE/DRAIN SILICIDE WO Patent WO/2011/162,977, 2011 | 30* | 2011 |
| DELTA MONOLAYER DOPANTS EPITAXY FOR EMBEDDED SOURCE/DRAIN SILICIDE KK Chan, A Dube, JR Holt, JB Johnson, J Li, D Park, Z Zhu US Patent 20,110,316,044, 2011 | 30 | 2011 |
| Structure and method for increasing strain in a device KK Chan, A Dube, VC Ontalus US Patent 8,551,845, 2013 | 29 | 2013 |
| On implementation of embedded phosphorus-doped SiC stressors in SOI nMOSFETs Z Ren, G Pei, J Li, BF Yang, R Takalkar, K Chan, G Xia, Z Zhu, A Madan, ... 2008 Symposium on VLSI Technology, 172-173, 2008 | 25 | 2008 |
| Effects of interfacial organic layers on thin film nucleation in atomic layer deposition A Dube, M Sharma, PF Ma, JR Engstrom Applied physics letters 89, 164108, 2006 | 24 | 2006 |
| Field effect transistor device KK Chan, A Dube, EC Harley, JR Holt, VC Ontalus, KT Schonenberg, ... US Patent 8,492,234, 2013 | 23 | 2013 |
| Stressed transistor with improved metastability TN Adam, SW Bedell, A Dube, ECT Harley, JR Holt, A Reznicek, ... US Patent 8,361,859, 2013 | 23 | 2013 |
| Bi-layer nFET embedded stressor element and integration to enhance drive current KK Chan, A Dube, J Li, V Ontalus, Z Zhu US Patent 8,035,141, 2011 | 23 | 2011 |
| Method for forming carbon silicon alloy (csa) and structures thereof AB Chakravarti, A Dube, R Loesing, DJ Schepis US Patent App. 12/111,377, 2009 | 23 | 2009 |
| STRUCTURE AND METHOD FOR FORMING ISOLATION AND BURIED PLATE FOR TRENCH CAPACITOR A Dube, SS Iyer, BA Khan, O Kwon, J Lee, PC Parries, C Pei, G Pfeiffer, ... US Patent App. 12/704,084, 2010 | 22 | 2010 |
Viorel OntalusGlobal FoundriesEmail verificata su globalfoundries.com
