| A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applications JJ Pekarik, J Adkisson, P Gray, Q Liu, R Camillo-Castillo, M Khater, V Jain, ... 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 92-95, 2014 | 103 | 2014 |
| Semiconductor device and method of forming the device by forming monocrystalline semiconductor layers on a dielectric layer over isolation regions JW Adkisson, P Cheng, V Jain, VK Kaushal, Q Liu, JJ Pekarik US Patent 9,029,229, 2015 | 32 | 2015 |
| Total dose and transient response of SiGe HBTs from a new 4th-Generation, 90 nm SiGe BiCMOS technology NE Lourenco, RL Schmid, KA Moen, SD Phillips, TD England, ... 2012 IEEE Radiation Effects Data Workshop, 1-5, 2012 | 27 | 2012 |
| A study of geometry effects on the performance of ballistic deflection transistor V Kaushal, I Iñiguez-de-La-Torre, H Irie, G Guarino, WR Donaldson, ... IEEE Transactions on Nanotechnology 9 (6), 723-733, 2010 | 26 | 2010 |
| Heterojunction bipolar transistors with an airgap between the extrinsic base and collector R Camillo-Castillo, V Jain, VK Kaushal, MH Khater, AK Stamper US Patent 9,159,817, 2015 | 21 | 2015 |
| Heterojunction bipolar transistor with improved performance and breakdown voltage R Camillo-Castillo, V Jain, VK Kaushal, MH Khater US Patent 9,368,608, 2016 | 16 | 2016 |
| Profile control over a collector of a bipolar junction transistor R Camillo-Castillo, DL Harame, V Jain, VK Kaushal, MH Khater US Patent 9,245,951, 2016 | 15 | 2016 |
| Nonlinear electron properties of an InGaAs/InAlAs-based ballistic deflection transistor: Room temperature DC experiments and numerical simulations V Kaushal, I Iñiguez-de-la-Torre, M Margala Solid-State Electronics 56 (1), 120-129, 2011 | 15 | 2011 |
| Exploring digital logic design using ballistic deflection transistors through Monte Carlo simulations I Íñiguez-de-La-Torre, S Purohit, V Kaushal, M Margala, M Gong, ... IEEE Transactions on Nanotechnology 10 (6), 1337-1346, 2011 | 14 | 2011 |
| Study of mutual and self-thermal resistance in 90nm SiGe HBTs V Jain, B Zetterlund, P Cheng, RA Camillo-Castillo, JJ Pekarik, ... 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 17-20, 2013 | 11 | 2013 |
| Bipolar device having a monocrystalline semiconductor intrinsic base to extrinsic base link-up region RA Camillo-Castillo, V Jain, VK Kaushal, MH Khater US Patent 8,946,861, 2015 | 10 | 2015 |
| Effects of a high-k dielectric on the performance of III–V ballistic deflection transistors V Kaushal, I Iniguez-de-la-Torre, T González, J Mateos, B Lee, V Misra, ... IEEE electron device letters 33 (8), 1120-1122, 2012 | 10 | 2012 |
| Practical consensus recommendations on management of HR+ ve early breast cancer with specific reference to genomic profiling A Aggarwal, A Vaid, A Ramesh, PM Parikh, S Purohit, B Avasthi, S Gupta, ... South Asian Journal of Cancer 7 (02), 096-101, 2018 | 9 | 2018 |
| Bipolar junction transistors with an air gap in the shallow trench isolation R Camillo-Castillo, V Jain, VK Kaushal, MH Khater, AK Stamper US Patent 9,231,074, 2016 | 9 | 2016 |
| General purpose logic gate using ballistic nanotransistors D Wolpert, I Iñiguez-de-la-Torre, V Kaushal, M Margala, P Ampadu 2011 11th IEEE International Conference on Nanotechnology, 1171-1176, 2011 | 9 | 2011 |
| Bipolar device having a monocrystalline semiconductor intrinsic base to extrinsic base link-up region RA Camillo-Castillo, P Cheng, PB Gray, V Jain, VK Kaushal, MH Khater US Patent 8,810,005, 2014 | 8 | 2014 |
| Co-integration of high-performance and high-breakdown SiGe HBTs in a BiCMOS technology JJ Pekarik, JW Adkisson, R Camillo-Castillo, P Cheng, AW DiVergilio, ... 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 1-4, 2012 | 8 | 2012 |
| Current transport modeling and experimental study of THz room temperature ballistic deflection transistors V Kaushal, M Margala, Q Yu, P Ampadu, G Guarino, R Sobolewski Journal of Physics: Conference Series 193 (1), 012092, 2009 | 8 | 2009 |
| Heterojunction bipolar transistors with reduced parasitic capacitance R Camillo-Castillo, V Jain, VK Kaushal, MH Khater US Patent 9,070,734, 2015 | 7 | 2015 |
| Schottky Barrier Diodes in 90nm SiGe BiCMOS process operating near 2.0 THz cut-off frequency V Jain, P Cheng, BJ Gross, R Camillo-Castillo, JJ Pekarik, JW Adkisson, ... 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 73-76, 2013 | 7 | 2013 |
