RRAM-based synapse devices for neuromorphic systems K Moon, S Lim, J Park, C Sung, S Oh, J Woo, J Lee, H Hwang
Faraday discussions 213, 421-451, 2019
198 2019 Various threshold switching devices for integrate and fire neuron applications D Lee, M Kwak, K Moon, W Choi, J Park, J Yoo, J Song, S Lim, C Sung, ...
Advanced Electronic Materials 5 (9), 1800866, 2019
113 2019 Improved Synapse Device With MLC and Conductance Linearity Using Quantized Conduction for Neuromorphic Systems S Lim, C Sung, H Kim, T Kim, J Song, JJ Kim, H Hwang
IEEE Electron Device Letters 39 (2), 312-315, 2018
66 2018 Field-induced nucleation in threshold switching characteristics of electrochemical metallization devices J Yoo, J Park, J Song, S Lim, H Hwang
Applied Physics Letters 111 (6), 2017
66 2017 Effect of nitrogen doping on variability of TaOx-RRAM for low-power 3-bit MLC applications SH Misha, N Tamanna, J Woo, S Lee, J Song, J Park, S Lim, J Park, ...
ECS Solid State Letters 4 (3), P25, 2015
49 2015 Effect of conductance linearity and multi-level cell characteristics of TaOx-based synapse device on pattern recognition accuracy of neuromorphic system C Sung, S Lim, H Kim, T Kim, K Moon, J Song, JJ Kim, H Hwang
Nanotechnology 29 (11), 115203, 2018
47 2018 Reliable Ge2 Sb2 Te5 ‐Integrated High‐Density Nanoscale Conductive Bridge Random Access Memory using Facile Nitrogen‐Doping Strategy N Raeis‐Hosseini, S Lim, H Hwang, J Rho
Advanced Electronic Materials 4 (11), 1800360, 2018
42 2018 Controllable quantized conductance for multilevel data storage applications using conductive bridge random access memory FG Aga, J Woo, J Song, J Park, S Lim, C Sung, H Hwang
Nanotechnology 28 (11), 115707, 2017
40 2017 Improved synaptic behavior of CBRAM using internal voltage divider for neuromorphic systems S Lim, M Kwak, H Hwang
IEEE Transactions on Electron Devices 65 (9), 3976-3981, 2018
34 2018 Excellent synaptic behavior of lithium-based nano-ionic transistor based on optimal WO2. 7 stoichiometry with high ion diffusivity J Lee, RD Nikam, S Lim, M Kwak, H Hwang
Nanotechnology 31 (23), 235203, 2020
33 2020 Monolithic integration of AgTe/TiO2 based threshold switching device with TiN liner for steep slope field-effect transistors J Song, J Park, K Moon, J Woo, S Lim, J Yoo, D Lee, H Hwang
2016 IEEE International Electron Devices Meeting (IEDM), 25.3. 1-25.3. 4, 2016
33 2016 Understanding of proton induced synaptic behaviors in three-terminal synapse device for neuromorphic systems J Lee, S Lim, M Kwak, J Song, H Hwang
Nanotechnology 30 (25), 255202, 2019
32 2019 Self-limited CBRAM with threshold selector for 1S1R crossbar array applications J Song, J Woo, S Lim, SA Chekol, H Hwang
IEEE Electron Device Letters 38 (11), 1532-1535, 2017
32 2017 Effects of Liner Thickness on the Reliability of AgTe/TiO2 -Based Threshold Switching Devices J Song, J Woo, J Yoo, SA Chekol, S Lim, C Sung, H Hwang
IEEE Transactions on Electron Devices 64 (11), 4763-4767, 2017
30 2017 Retention modeling for ultra-thin density of Cu-based conductive bridge random access memory (CBRAM) FG Aga, J Woo, S Lee, J Song, J Park, J Park, S Lim, C Sung, H Hwang
AIP Advances 6 (2), 2016
25 2016 Microstructural engineering in interface-type synapse device for enhancing linear and symmetric conductance changes J Park, C Lee, M Kwak, SA Chekol, S Lim, M Kim, J Woo, H Hwang, D Lee
Nanotechnology 30 (30), 305202, 2019
21 2019 Excellent threshold switching device (Ioff ∼ 1 pA) with atom-scale metal filament for steep slope (< 5 mV/dec), ultra low voltage (Vdd = 0.25 V) FET applications S Lim, J Yoo, J Song, J Woo, J Park, H Hwang
2016 IEEE International Electron Devices Meeting (IEDM), 34.7. 1-37.7. 4, 2016
20 2016 An excellent performance of a C-Te OTS device with amorphous Ge interfacial layer for selector application SA Chekol, J Song, J Yoo, S Lim, H Hwang
Applied Physics Letters 114 (10), 2019
19 2019 Investigation of Linearity in TaOx -Based RRAM Devices for Neuromorphic Applications C Sung, A Padovani, B Beltrando, D Lee, M Kwak, S Lim, L Larcher, ...
IEEE Journal of The Electron Devices Society 7, 404-408, 2019
18 2019 Multi-state resistance switching and variability analysis of HfOx based RRAM for ultra-high density memory applications A Prakash, JS Park, J Song, SJ Lim, JH Park, J Woo, E Cha, H Hwang
2015 International Symposium on Next-Generation Electronics (ISNE), 1-2, 2015
16 2015